US6074945A
Expired / Lapsed
US
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Methods for preparing ruthenium metal films
Assignee: Mosaid Technologies Inc
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Filing: 1998-08-27
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Granted: 2000-06-13
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Expires: 2018-08-27
Abstract
Abstract The present invention provides methods for the preparation of ruthenium metal films from liquid ruthenium complexes of the formula (diene)Ru(CO) 3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or 0, or combinations thereof.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Eugene P. Marsh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:47
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
101 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on a surface of the semiconductor substrate or substrate assembly.
Claim 2
Independent Claim
101 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on a surface of the semiconductor substrate or substrate assembly.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the temperature of the substrate or substrate assembly is about 150° C. to about 350° C.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the temperature of the substrate or substrate assembly is about 200° C. to about 250° C.
Claim 5
Dependent Claim
29 words
The method of claim 3 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 10 -3 torr to about 1 atmosphere.
Claim 6
Dependent Claim
28 words
The method of claim 4 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 0.1 torr to about 10 torr.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein the substrate or substrate assembly is contained within a reaction chamber having a pressure of about 0.1 torr to about 10 torr.
Claim 8
Dependent Claim
31 words
The method of claim 1 wherein the step of vaporizing the liquid precursor comprises using a technique selected from the group consisting of flash vaporization, bubbling, microdroplet formation, and combinations thereof.
Claim 9
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly comprises a silicon wafer.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein the precursor composition is vaporized in the presence of at least one carrier gas.
Claim 11
Dependent Claim
20 words
The method of claim 1 wherein the precursor composition is vaporized in the presence of at least one reducing gas.
Claim 12
Dependent Claim
33 words
The method of claim 10 wherein the precursor composition is vaporized in the presence of a reducing gas selected from the group consisting of H 2 , NH 3 , and combinations thereof.
Claim 13
Dependent Claim
13 words
The method of claim 1 wherein the diene derivative is a fluorinated diene.
Claim 14
Independent Claim
145 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly, which is at a temperature of about 150° C. to about 350° C., contained within a reaction chamber having a pressure of about 10 -3 torr to about 1 atmosphere; providing a liquid precursor composition at a temperature of about 20° C. to about 50° C., the precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on a surface of the semiconductor substrate or substrate assembly.
Claim 15
Independent Claim
145 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly, which is at a temperature of about 150° C. to about 350° C., contained within a reaction chamber having a pressure of about 10 -3 torr to about 1 atmosphere; providing a liquid precursor composition at a temperature of about 20° C. to about 50° C., the precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on a surface of the semiconductor substrate or substrate assembly.
Claim 16
Dependent Claim
13 words
The method of claim 13 wherein the diene derivative is a fluorinated diene.
Claim 17
Independent Claim
106 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on a surface of the semiconductor substrate or substrate assembly; and annealing the ruthenium metal film.
Claim 18
Independent Claim
106 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on a surface of the semiconductor substrate or substrate assembly; and annealing the ruthenium metal film.
Claim 19
Dependent Claim
23 words
The method of claim 15 wherein the annealing step is carried out at a temperature of about 300° C. to about 1000° C.
Claim 20
Dependent Claim
13 words
The method of claim 15 wherein the diene derivative is a fluorinated diene.
Claim 21
Independent Claim
122 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio openings; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on the surface of the semiconductor substrate or substrate assembly having the one or more high aspect ratio openings.
Claim 22
Independent Claim
122 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio openings; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms, or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on the surface of the semiconductor substrate or substrate assembly having the one or more high aspect ratio openings.
Claim 23
Dependent Claim
13 words
The method of claim 18 wherein the diene derivative is a fluorinated diene.
Claim 24
Independent Claim
93 words
A method of forming a ruthenium metal film on a substrate, the method comprising: providing a substrate; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a ruthenium metal film on a surface of the substrate.
Claim 25
Independent Claim
93 words
A method of forming a ruthenium metal film on a substrate, the method comprising: providing a substrate; providing a liquid precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a ruthenium metal film on a surface of the substrate.
Claim 26
Dependent Claim
13 words
The method of claim 20 wherein the diene derivative is a fluorinated diene.
Claim 27
Independent Claim
175 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio openings, which is at a temperature of about 150° C. to about 350° C., wherein the semiconductor substrate or substrate assembly is contained within a reaction chamber having a pressure of about 10 -3 torr to about 1 atmosphere; providing a liquid precursor composition at a temperature of about 20° C. to about 50° C., the precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on the surface of the semiconductor substrate or substrate assembly having the one or more small high aspect ratio openings.
Claim 28
Independent Claim
175 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly comprising a surface having one or more small high aspect ratio openings, which is at a temperature of about 150° C. to about 350° C., wherein the semiconductor substrate or substrate assembly is contained within a reaction chamber having a pressure of about 10 -3 torr to about 1 atmosphere; providing a liquid precursor composition at a temperature of about 20° C. to about 50° C., the precursor composition comprising one or more compounds of the formula: (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, derivatives thereof comprising halide, Si, S, Se, P, As, N, or O heteroatoms or combinations of said heteroatoms; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a ruthenium metal film on the surface of the semiconductor substrate or substrate assembly having the one or more small high aspect ratio openings.
Claim 29
Dependent Claim
13 words
The method of claim 22 wherein the diene derivative is a fluorinated diene.
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