US5520992A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrodes for high dielectric constant materials
Assignee: Texas Instruments Inc
•
Filing: 1993-06-22
•
Granted: 1996-05-28
•
Expires: 2013-06-22
Abstract
Abstract Novel methods of forming capacitors containing high dielectric materials are disclosed. Capacitors are made by forming a layer of conductive metal nitride (e.g. ruthenium nitride, 28), then forming a layer of a high dielectric constant material (e.g. barium strontium titanate, 30) on the metal nitride layer, then forming a layer of a non-metal containing electrically conductive compound (e.g. ruthenium oxide, 32) on the layer of high dielectric constant material. Typically, the high dielectric constant material is a transition metal oxide, a titanate, a titanate doped with one or more rare earth elements, a titanate doped with one or more alkaline earth metals, or combinations thereof. Preferably, the conductive compound is ruthenium nitride, ruthenium dioxide, tin nitride, tin oxide, titanium nitride, titanium monoxide, or combinations thereof. The conductive compound may be doped to increase its electrical conductivity.
Inventors
- 👤 Monte A. Douglas
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:04
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/008; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/0948; H03K19/0008; H03K19/0016; H03K19/003; H03K19/00323; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D1/682; H10D1/694; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
64 words
A structure comprising: a semiconductor structure; a first layer formed on said semiconductor substrate and comprising a conductive nitride of a first metal; a second layer in contact with said first layer and comprising a conductive oxide of said first metal; a third layer in contact with said second layer and comprising a dielectric material; and an electrical connection formed on said third layer.
Claim 2
Dependent Claim
64 words
A structure comprising: a semiconductor structure; a first layer formed on said semiconductor substrate and comprising a conductive nitride of a first metal; a second layer in contact with said first layer and comprising a conductive oxide of said first metal; a third layer in contact with said second layer and comprising a dielectric material; and an electrical connection formed on said third layer.
Claim 3
Dependent Claim
21 words
The structure of claim 1, wherein said first metal is selected from the group consisting of ruthenium, tin, zinc and titanium.
Claim 4
Dependent Claim
16 words
The structure of claim 1, wherein said first layer is in contact with said semiconductor substrate.
Claim 5
Dependent Claim
58 words
The structure of claim 1, wherein said dielectric material is selected from the group consisting of barium strontium titanate, lead zirconate titanate, lead titanate, potassium niobate, potassium tantalate, lead niobate, lead magnesium niobate, magnesium niobate, bismuth titanate, tantalum pentoxide, niobium pentoxide, titanium dioxide, yttrium trioxide, strontium titanate, titanium trioxide, lanthanum-doped (Ba,Sr,Pb)(Ti,Zr)O 3 , and niobium-doped (Ba,Sr,Pb)(Ti,Zr)O 3 .
Claim 6
Dependent Claim
36 words
The structure of claim 1, wherein said conductive oxide is doped to form a doped metal oxide whereby the electrical conductivity of said doped metal oxide is greater than the electrical conductivity of said conductive oxide.
Claim 7
Dependent Claim
15 words
The structure of claim 5, wherein said doped metal oxide is indium doped tin oxide.
Claim 8
Dependent Claim
36 words
The structure of claim 1, wherein said conductive nitride is doped to form a doped metal nitride whereby the electrical conductivity of said doped metal nitride is greater than the electrical conductivity of said conductive nitride.
Claim 9
Dependent Claim
20 words
The structure of claim 7, wherein said doped metal nitride is indium doped tin nitride or aluminum doped zinc nitride.
Claim 10
Dependent Claim
47 words
The structure of claim 1, wherein said electrical connection comprises: a fourth layer in contact with said third layer and comprising a conductive oxide of a second metal; and a fifth layer in contact with said fourth layer and comprising a conductive nitride of said second metal.
Claim 11
Dependent Claim
17 words
The structure of claim 9, wherein said first metal and said second metal are the same metal.
Claim 12
Dependent Claim
25 words
The structure of claim 9, wherein said first metal and said second metal are selected from the group consisting of ruthenium, tin, zinc and titanium.
Claim 13
Dependent Claim
16 words
The structure of claim 9, wherein said first layer is in contact with said semiconductor substrate.
Claim 14
Dependent Claim
58 words
The structure of claim 9, wherein said dielectric material is selected from the group consisting of barium strontium titanate, lead zirconate titanate, lead titanate, potassium niobate, potassium tantalate, lead niobate, lead magnesium niobate, magnesium niobate, bismuth titanate, tantalum pentoxide, niobium pentoxide, titanium dioxide, yttrium trioxide, strontium titanate, titanium trioxide, lanthanum-doped (Ba,Sr,Pb)(Ti,Zr)O 3 , and niobium-doped (Ba,Sr,Pb)(Ti,Zr)O 3 .
References Cited (Backward Citations)
US4186423A
Cited
US4184192A
Cited
US4387387A
Cited
US4528546A
Cited
US4598306A
Cited
US5046043A
Cited
US4959745A
Cited
US5085926A
Cited
US5005102A
Cited
US5070026A
Cited
US4982309A
Cited
US5003428A
Cited
US5053917A
Cited
US5031144A
Cited
US5164808A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-28 | 1999-11-27 | 2000-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-28 | 2003-11-27 | 2004-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-28 | 2007-11-27 | 2008-05-28 | $7700.00 | Window Closed / Lapsed |