US5874364A
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US
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Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1996-03-26
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Granted: 1999-02-23
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Expires: 2016-03-26
Abstract
Abstract The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.
Inventors
- 👤 Masaaki Nakabayashi
- 👤 Tetsuro Tamura
- 👤 Hideyuki Noshiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:59
CPC Classifications
H; H10; H10B; H10B12/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/046; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C16/00; C23C16/04; C23C16/06; C23C16/18; C23C16/22; C23C16/30; C23C16/40; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/0335; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/42; H10P14/43; H10P14/44; H10W20/056; H10W20/057; H10D1/682; H10D1/696
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
50 words
A thin film forming method comprising the steps of: using 2,6-dimethyl 3,5-heptanedione (Ru(DMHPD) 3 ) as a source material for forming a film by chemical vapor deposition and vaporizing 2,6-dimethyl 3,5-heptanedione for application whereby disuniformity in film thickness and sheet resistance of said film is decreased on a film substrate.
Claim 2
Dependent Claim
50 words
A thin film forming method comprising the steps of: using 2,6-dimethyl 3,5-heptanedione (Ru(DMHPD) 3 ) as a source material for forming a film by chemical vapor deposition and vaporizing 2,6-dimethyl 3,5-heptanedione for application whereby disuniformity in film thickness and sheet resistance of said film is decreased on a film substrate.
Claim 3
Dependent Claim
93 words
A thin film forming method comprising the steps of: using 2,6-dimethyl 3,5-heptanedione (Ru(DMHPD) 3 ) as a source material for forming a film; heating said 2,6-dimethyl 3,5-heptanedione in a source chamber to form a liquidized product; contacting said liquidized product with a carrier gas to form a feed mixture, whereby said feed mixture may be stably discharged from said source chamber; discharging said feed mixture from said source chamber into a chamber for forming thin films; reacting said feed mixture in said chamber with a gas to deposit a film on a substrate.
Claim 4
Dependent Claim
93 words
A thin film forming method comprising the steps of: using 2,6-dimethyl 3,5-heptanedione (Ru(DMHPD) 3 ) as a source material for forming a film; heating said 2,6-dimethyl 3,5-heptanedione in a source chamber to form a liquidized product; contacting said liquidized product with a carrier gas to form a feed mixture, whereby said feed mixture may be stably discharged from said source chamber; discharging said feed mixture from said source chamber into a chamber for forming thin films; reacting said feed mixture in said chamber with a gas to deposit a film on a substrate.
Claim 5
Dependent Claim
15 words
The thin film forming method according to claim 2 wherein said carrier gas is Ar.
Claim 6
Dependent Claim
33 words
The thin film forming method according to claim 2 wherein said gas for reaction with said feed mixture is a gas selected from the group consisting of H 2 and O 2 .
Claim 7
Dependent Claim
22 words
The thin film forming method according to claim 2 wherein the pressure of said chamber for forming thin films is 1-10 Torr.
Claim 8
Dependent Claim
22 words
The thin film forming method according to claim 5 wherein the temperature of the liquidizing step is 90° C. to 120° C.
Claim 9
Dependent Claim
21 words
The thin film forming method according to claim 2 wherein the temperature of said substrate is 300° C. to 600° C.
Claim 10
Dependent Claim
21 words
The thin film forming method according to claim 7 wherein the liquidized product is contacted with said carrier gas by bubbling.
Claim 11
Independent Claim
99 words
A method for fabricating a semiconductor device comprising the steps of: using 2,6-dimethyl 3,5-heptanedione (Ru(DMHPD) 3 ) as a source material for forming a film; heating said 2,6-dimethyl 3,5-heptanedione in a source chamber to form a liquidized product; contacting said liquidized product with a carrier gas to form a feed mixture, whereby said feed mixture may be stably discharged from said source chamber; discharging said feed mixture from said source chamber into a chamber for forming thin films; reacting said feed mixture in said chamber with a gas to deposit a film on a substrate used for a semiconductor.
Claim 12
Independent Claim
99 words
A method for fabricating a semiconductor device comprising the steps of: using 2,6-dimethyl 3,5-heptanedione (Ru(DMHPD) 3 ) as a source material for forming a film; heating said 2,6-dimethyl 3,5-heptanedione in a source chamber to form a liquidized product; contacting said liquidized product with a carrier gas to form a feed mixture, whereby said feed mixture may be stably discharged from said source chamber; discharging said feed mixture from said source chamber into a chamber for forming thin films; reacting said feed mixture in said chamber with a gas to deposit a film on a substrate used for a semiconductor.
Claim 13
Dependent Claim
15 words
The thin film forming method according to claim 9 wherein said carrier gas is Ar.
Claim 14
Dependent Claim
33 words
The thin film forming method according to claim 9 wherein said gas for reaction with said feed mixture is a gas selected from the group consisting of H 2 and O 2 .
Claim 15
Dependent Claim
22 words
The thin film forming method according to claim 9 wherein the pressure of said chamber for forming thin films is 1-10 Torr.
Claim 16
Dependent Claim
22 words
The thin film forming method according to claim 9 wherein the temperature of the liquidizing step is 90° C. to 120° C.
Claim 17
Dependent Claim
21 words
The thin film forming method according to claim 9 wherein the temperature of said substrate is 300° C. to 600° C.
Claim 18
Dependent Claim
21 words
The thin film forming method according to claim 9 wherein the liquidized product is contacted with said carrier gas by bubbling.
Claim 19
Dependent Claim
27 words
A thin film forming method according to claim 2, wherein said gas for reaction with said feed mixture is H 2 gas for depositing a ruthenium film.
Claim 20
Dependent Claim
28 words
A thin film forming method according to claim 2, wherein said gas for reaction with said feed mixture is O 2 gas for depositing a ruthenium oxide film.
Claim 21
Dependent Claim
29 words
A method for fabricating the semiconductor device according to claim 9, wherein said gas for reaction with said feed mixture is H 2 gas for depositing a ruthenium film.
Claim 22
Dependent Claim
30 words
A method for forming the semiconductor device according to claim 9, wherein said gas for reaction with said feed mixture is O 2 gas for depositing a ruthenium oxide film.
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