US5608247A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Storage capacitor structures using CVD tin on hemispherical grain silicon
Assignee: Round Rock Research LLC
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Filing: 1995-05-15
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Granted: 1997-03-04
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Expires: 2015-05-15
Abstract
Abstract An embodiment of the present invention depicts a storage capacitor comprising: a bottom plate structure having a hemispherical grain silicon surface; a titanium nitride layer adjacent and coextensive the hemispherical grain silicon; an insulating layer adjacent and coextensive the titanium nitride layer; and a top plate structure comprising conductively doped polysilicon layer superjacent and coextensive the insulating layer.
Inventors
- 👤 Kris K. Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:53
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
52 words
A semiconductor device having a storage capacitor, said storage capacitor comprising: a bottom plate structure having hemispherical grain silicon surface; a conformal titanium nitride layer adjacent said hemispherical grain silicon surface; an insulating layer adjacent said titanium nitride layer; and a top plate structure comprising conductively doped polysilicon over said insulating layer.
Claim 2
Dependent Claim
52 words
A semiconductor device having a storage capacitor, said storage capacitor comprising: a bottom plate structure having hemispherical grain silicon surface; a conformal titanium nitride layer adjacent said hemispherical grain silicon surface; an insulating layer adjacent said titanium nitride layer; and a top plate structure comprising conductively doped polysilicon over said insulating layer.
Claim 3
Dependent Claim
14 words
The semiconductor device as recited in claim 1, wherein said insulating layer comprises nitride.
Claim 4
Dependent Claim
54 words
A storage capacitor in a semiconductor device, said capacitor comprising: a bottom plate structure having hemispherical grain silicon surface; a conformal titanium nitride layer disposed on said hemispherical grain silicon surface; an insulating layer disposed on said titanium nitride layer; and a top plate structure comprising conductively doped polysilicon disposed on said insulating layer.
Claim 5
Dependent Claim
54 words
A storage capacitor in a semiconductor device, said capacitor comprising: a bottom plate structure having hemispherical grain silicon surface; a conformal titanium nitride layer disposed on said hemispherical grain silicon surface; an insulating layer disposed on said titanium nitride layer; and a top plate structure comprising conductively doped polysilicon disposed on said insulating layer.
Claim 6
Dependent Claim
13 words
The storage capacitor as recited in claim 3, said insulating layer comprises nitride.
Claim 7
Dependent Claim
60 words
A dynamic random access memory device having a storage capacitor, said capacitor comprising: a bottom plate structure having a hemispherical grain silicon surface; a conformal titanium nitride layer formed on said hemispherical grain silicon surface; an insulating layer formed on said titanium nitride layer; and a top plate structure comprising a conductively doped polysilicon layer formed over said insulating layer.
Claim 8
Dependent Claim
60 words
A dynamic random access memory device having a storage capacitor, said capacitor comprising: a bottom plate structure having a hemispherical grain silicon surface; a conformal titanium nitride layer formed on said hemispherical grain silicon surface; an insulating layer formed on said titanium nitride layer; and a top plate structure comprising a conductively doped polysilicon layer formed over said insulating layer.
Claim 9
Dependent Claim
17 words
The dynamic random access memory device as recited in claim 5, wherein said insulating layer comprises nitride.
Claim 10
Dependent Claim
29 words
A capacitor plate in a semiconductor device, said capacitor plate comprising: a hemispherical grain silicon surface; and a conformal titanium nitride layer deposited on said hemispherical grain silicon surface.
Claim 11
Dependent Claim
29 words
A capacitor plate in a semiconductor device, said capacitor plate comprising: a hemispherical grain silicon surface; and a conformal titanium nitride layer deposited on said hemispherical grain silicon surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-03 | 2000-09-02 | 2001-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-03 | 2004-09-02 | 2005-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-03 | 2008-09-02 | 2009-03-04 | $7700.00 | Window Closed / Lapsed |