US6340830B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for forming the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1999-01-27
•
Granted: 2002-01-22
•
Expires: 2019-01-27
Abstract
Abstract In a field effect type device having a thin film-like active layer, there is provided a thin film-like semiconductor device including a top side gate electrode on the active layer and a bottom side gate electrode connected to a static potential, the bottom side gate electrode being provided between the active layer and a substrate. The bottom side gate electrode may be electrically connected to only one of a source and a drain of the field effect type device. Also, the production methods therefor are disclosed.
Inventors
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:18
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D86/00; H10D86/40; H10D86/441; H10D86/60
Claims Analysis
Total Claims: 78
Claim 1
Independent Claim
134 words
A semiconductor device comprising: at least a p-channel thin film transistor and an n-channel thin film transistor provided over a substrate having an insulating surface, wherein each of said p-channel thin film transistor and said n-channel thin film transistor comprises a pair of impurity regions, a channel region provided between said impurity regions, and a gate electrode provided over said channel region with a first gate insulating film therebetween, wherein only said n-channel thin film transistor further comprises a conductive layer below said channel region with a second insulating film therebetween, and wherein said conductive layer is overlapped with one of said pair of impurity regions of said n-channel thin film transistor and said conductive layer is not overlapped with the other of said pair of impurity regions of said n-channel thin film transistor.
Claim 2
Dependent Claim
134 words
A semiconductor device comprising: at least a p-channel thin film transistor and an n-channel thin film transistor provided over a substrate having an insulating surface, wherein each of said p-channel thin film transistor and said n-channel thin film transistor comprises a pair of impurity regions, a channel region provided between said impurity regions, and a gate electrode provided over said channel region with a first gate insulating film therebetween, wherein only said n-channel thin film transistor further comprises a conductive layer below said channel region with a second insulating film therebetween, and wherein said conductive layer is overlapped with one of said pair of impurity regions of said n-channel thin film transistor and said conductive layer is not overlapped with the other of said pair of impurity regions of said n-channel thin film transistor.
Claim 3
Dependent Claim
25 words
The device of claim 1 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 4
Dependent Claim
11 words
The device of claim 1 wherein said substrate is a quartz.
Claim 5
Dependent Claim
24 words
The device of claim 1 wherein said semiconductor device is one of a liquid crystal display device, image sensor, logic circuit and a memory.
Claim 6
Dependent Claim
14 words
The device of claim 1 wherein said channel region is formed of crystalline silicon.
Claim 7
Dependent Claim
134 words
A semiconductor device comprising: at least a p-channel thin film transistor and an n-channel thin film transistor provided over a substrate having an insulating surface, wherein each of said p-channel thin film transistor and said n-channel thin film transistor comprises a pair of impurity regions, a channel region provided between said impurity regions, and a gate electrode adjacent to one side of said channel region, wherein only said n-channel thin film transistor further comprises a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, and wherein said conductive layer is overlapped with one of said pair of impurity regions of said n-channel thin film transistor and said conductive layer is not overlapped with the other of said pair of impurity regions of said n-channel thin film transistor.
Claim 8
Dependent Claim
134 words
A semiconductor device comprising: at least a p-channel thin film transistor and an n-channel thin film transistor provided over a substrate having an insulating surface, wherein each of said p-channel thin film transistor and said n-channel thin film transistor comprises a pair of impurity regions, a channel region provided between said impurity regions, and a gate electrode adjacent to one side of said channel region, wherein only said n-channel thin film transistor further comprises a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, and wherein said conductive layer is overlapped with one of said pair of impurity regions of said n-channel thin film transistor and said conductive layer is not overlapped with the other of said pair of impurity regions of said n-channel thin film transistor.
Claim 9
Dependent Claim
25 words
The device of claim 6 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 10
Dependent Claim
11 words
The device of claim 6 wherein said substrate is a quartz.
Claim 11
Dependent Claim
24 words
The device of claim 6 wherein said semiconductor device is one of a liquid crystal display device, image sensor, logic circuit and a memory.
Claim 12
Dependent Claim
14 words
The device of claim 6 wherein said channel region is formed of crystalline silicon.
Claim 13
Dependent Claim
149 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 14
Dependent Claim
149 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 15
Dependent Claim
25 words
The device of claim 11 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 16
Dependent Claim
11 words
The device of claim 11 wherein said substrate is a quartz.
Claim 17
Dependent Claim
14 words
The device of claim 11 wherein said channel region is formed of crystalline silicon.
Claim 18
Dependent Claim
21 words
The device of claim 11 wherein said gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 19
Dependent Claim
159 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and said one of said pair of impurity regions are electrically connected.
Claim 20
Dependent Claim
159 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and said one of said pair of impurity regions are electrically connected.
Claim 21
Dependent Claim
25 words
The device of claim 16 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 22
Dependent Claim
11 words
The device of claim 16 wherein said substrate is a quartz.
Claim 23
Dependent Claim
14 words
The device of claim 16 wherein said channel region is formed of crystalline silicon.
Claim 24
Dependent Claim
21 words
The device of claim 16 wherein said gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 25
Dependent Claim
146 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with said source region and said conductive layer is not overlapped with said drain region, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 26
Dependent Claim
146 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with said source region and said conductive layer is not overlapped with said drain region, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 27
Dependent Claim
25 words
The device of claim 21 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 28
Dependent Claim
11 words
The device of claim 21 wherein said substrate is a quartz.
Claim 29
Dependent Claim
14 words
The device of claim 21 wherein said channel region is formed of crystalline silicon.
Claim 30
Dependent Claim
21 words
The device of claim 21 wherein said gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 31
Dependent Claim
150 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with said source region and said conductive layer is not overlapped with said drain region, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and source region are electrically connected.
Claim 32
Dependent Claim
150 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with said source region and said conductive layer is not overlapped with said drain region, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and source region are electrically connected.
Claim 33
Dependent Claim
25 words
The device of claim 26 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 34
Dependent Claim
11 words
The device of claim 26 wherein said substrate is a quartz.
Claim 35
Dependent Claim
14 words
The device of claim 26 wherein said channel region is formed of crystalline silicon.
Claim 36
Dependent Claim
21 words
The device of claim 26 wherein said gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 37
Dependent Claim
169 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer extends beyond a boundary of one of said pair of impurity regions and said channel region to overlap said channel region partially and said conductive layer does not extend beyond a boundary of the other of said pair of impurity regions and said channel region, wherein said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 38
Dependent Claim
169 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer extends beyond a boundary of one of said pair of impurity regions and said channel region to overlap said channel region partially and said conductive layer does not extend beyond a boundary of the other of said pair of impurity regions and said channel region, wherein said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 39
Dependent Claim
25 words
The device of claim 31 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 40
Dependent Claim
11 words
The device of claim 31 wherein said substrate is a quartz.
Claim 41
Dependent Claim
14 words
The device of claim 31 wherein said channel region is formed of crystalline silicon.
Claim 42
Dependent Claim
21 words
The device of claim 31 wherein said gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 43
Dependent Claim
179 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer extends beyond a boundary of one of said pair of impurity regions and said channel region to overlap said channel region partially and said conductive layer does not extend beyond a boundary of the other of said pair of impurity regions and said channel region, wherein said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and said one of said pair of impurity regions are electrically connected.
Claim 44
Dependent Claim
179 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with one of said pair of impurity regions and said conductive layer is not overlapped with the other of said pair of impurity regions, wherein said conductive layer extends beyond a boundary of one of said pair of impurity regions and said channel region to overlap said channel region partially and said conductive layer does not extend beyond a boundary of the other of said pair of impurity regions and said channel region, wherein said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and said one of said pair of impurity regions are electrically connected.
Claim 45
Dependent Claim
25 words
The device of claim 36 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 46
Dependent Claim
11 words
The device of claim 36 wherein said substrate is a quartz.
Claim 47
Dependent Claim
14 words
The device of claim 36 wherein said channel region is formed of crystalline silicon.
Claim 48
Dependent Claim
21 words
The device of claim 36 wherein said gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 49
Dependent Claim
146 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with said drain region and said conductive layer is not overlapped with said source region, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 50
Dependent Claim
146 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a gate electrode adjacent to one side of said channel region; and a conductive layer adjacent to the other side of said channel region opposed to said gate electrode, wherein said conductive layer is overlapped with said drain region and said conductive layer is not overlapped with said source region, wherein said conductive layer is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said conductive layer while said gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 51
Dependent Claim
25 words
The device of claim 41 wherein said conductive layer comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 52
Dependent Claim
11 words
The device of claim 41 wherein said substrate is a quartz.
Claim 53
Dependent Claim
14 words
The device of claim 41 wherein said channel region is formed of crystalline silicon.
Claim 54
Dependent Claim
21 words
The device of claim 41 wherein said gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 55
Dependent Claim
156 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface˜a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with one of said pair of impurity regions and said second gate electrode is not overlapped with the other of said pair of impurity regions, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said second gate electrode is grounded.
Claim 56
Dependent Claim
156 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface˜a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with one of said pair of impurity regions and said second gate electrode is not overlapped with the other of said pair of impurity regions, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said second gate electrode is grounded.
Claim 57
Dependent Claim
26 words
The device of claim 46 wherein said second gate electrode comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 58
Dependent Claim
11 words
The device of claim 46 wherein said substrate is a quartz.
Claim 59
Dependent Claim
14 words
The device of claim 46 wherein said channel region is formed of crystalline silicon.
Claim 60
Dependent Claim
22 words
The device of claim 46 wherein said first gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 61
Dependent Claim
166 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with one of said pair of impurity regions and said second gate electrode is not overlapped with the other of said pair of impurity regions, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and said one of said pair of impurity regions are electrically connected.
Claim 62
Dependent Claim
166 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a pair of impurity regions formed in said semiconductor layer; a channel region in said semiconductor layer between said impurity regions; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with one of said pair of impurity regions and said second gate electrode is not overlapped with the other of said pair of impurity regions, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and said one of said pair of impurity regions are electrically connected.
Claim 63
Dependent Claim
26 words
The device of claim 51 wherein said second gate electrode comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 64
Dependent Claim
11 words
The device of claim 51 wherein said substrate is a quartz.
Claim 65
Dependent Claim
14 words
The device of claim 51 wherein said channel region is formed of crystalline silicon.
Claim 66
Dependent Claim
22 words
The device of claim 51 wherein said first gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 67
Dependent Claim
153 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with said source region and said second gate electrode is not overlapped with said drain region, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 68
Dependent Claim
153 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with said source region and said second gate electrode is not overlapped with said drain region, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer is grounded.
Claim 69
Dependent Claim
26 words
The device of claim 56 wherein said second gate electrode comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 70
Dependent Claim
11 words
The device of claim 56 wherein said substrate is a quartz.
Claim 71
Dependent Claim
14 words
The device of claim 56 wherein said channel region is formed of crystalline silicon.
Claim 72
Dependent Claim
22 words
The device of claim 56 wherein said first gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
Claim 73
Dependent Claim
157 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with said source region and said second gate electrode is not overlapped with said drain region, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and source region are electrically connected.
Claim 74
Dependent Claim
157 words
A thin film transistor comprising: a substrate having an insulating surface; a semiconductor layer formed over said insulating surface; a source region and a drain region formed in said semiconductor layer; a channel region in said semiconductor layer between said source region and said drain region; a first gate electrode adjacent to one side of said channel region; and a second gate electrode adjacent to the other side of said channel region opposed to said gate electrode, wherein said second gate electrode is overlapped with said source region and said second gate electrode is not overlapped with said drain region, wherein said second gate electrode is overlapped with a first portion of said channel region so that a second portion of said channel region is offset from said second gate electrode while said first gate electrode is overlapped with an entire portion of said channel region, and wherein said conductive layer and source region are electrically connected.
Claim 75
Dependent Claim
26 words
The device of claim 61 wherein said second gate electrode comprises a material selected from the group consisting of a doped polysilicon, chromium, tantalum and tungsten.
Claim 76
Dependent Claim
11 words
The device of claim 61 wherein said substrate is a quartz.
Claim 77
Dependent Claim
14 words
The device of claim 61 wherein said channel region is formed of crystalline silicon.
Claim 78
Dependent Claim
22 words
The device of claim 61 wherein said first gate electrode is formed over said semiconductor layer with an insulating film interposed therebetween.
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