Field-effect type transistor

Abstract

Abstract PURPOSE:To reduce the area of a FET by oppositely arranging an electrode shorter than the length of a gate electrode to said gate electrode through a channel region and an insulating film and connecting said short electrode to a drain region. CONSTITUTION:A gate electrode 5 is formed onto a channel region 4C between a source region 4S and a drain region 4D through a gate insulating film 6. A second drain electrode 2 shorter than the electrode 5 is disposed oppositely to the electrode 5 through the region 4C and an insulating film 3. The electrode 2 is connected to a drain electrode 8. In such constitution, apparent channel length is shortened and a mutual conductance value is increased when positive gate voltage is applied to the electrode 5. Accordingly, the mutual conductance value can be kept at a fixed value even when channel width is shortened, thus reducing an element area.

Inventors

• 👤 Hisao Hayashi
• 👤 久雄 林

Bibliographic Details