US4984033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film semiconductor device with oxide film on insulating layer
Assignee: Mitsubishi Electric Corp
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Filing: 1988-12-21
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Granted: 1991-01-08
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Expires: 2008-12-21
Abstract
Abstract A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer over the pattern of the metal thin film by laser CVD.
Inventors
- 👤 Akira Ishizu
- 👤 Tadashi Nishimura
- 👤 Yasuo Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:38
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D86/40; H10D86/60; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S148/093
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
117 words
A thin film semiconductor device, the thin film semiconductor device having a gate, gate oxide, and source, gate, and drain electrodes, said device comprising: a transparent substrate; a light shielding layer formed on the substrate; an insulating layer formed over said light shielding layer; a semiconductor active layer formed over said insulating layer; a gate oxide film formed on the semiconductor active layer; a gate formed on the gate oxide film; an oxide film formed directly on the insulating layer, the semiconductor active layer and the gate; and a source electrode and a drain electrode formed on the oxide film and the semiconductor active layer, and a gate electrode formed on the oxide film and the gate.
Claim 2
Dependent Claim
117 words
A thin film semiconductor device, the thin film semiconductor device having a gate, gate oxide, and source, gate, and drain electrodes, said device comprising: a transparent substrate; a light shielding layer formed on the substrate; an insulating layer formed over said light shielding layer; a semiconductor active layer formed over said insulating layer; a gate oxide film formed on the semiconductor active layer; a gate formed on the gate oxide film; an oxide film formed directly on the insulating layer, the semiconductor active layer and the gate; and a source electrode and a drain electrode formed on the oxide film and the semiconductor active layer, and a gate electrode formed on the oxide film and the gate.
Claim 3
Dependent Claim
17 words
A device according to claim 1, wherein said light shielding layer is formed of a metal film.
Claim 4
Dependent Claim
15 words
A device according to claim 1, wherein said insulating layer is formed of silicon oxide.
Claim 5
Dependent Claim
16 words
A device according to claim 1, wherein said semiconductor active layer is formed of crystallized silicon.
Claim 6
Dependent Claim
33 words
A device according to claim 1, wherein said light shielding layer has a certain pattern; and said semiconductor active layer has a pattern identical to said certain pattern of the light shielding layer.
Claim 7
Dependent Claim
24 words
A device according to claim 5, wherein said semiconductor active layer is formed selectively over said light shielding layer by a laser CVD process.
Claim 8
Dependent Claim
30 words
A device according to claim 6, wherein, during the laser CVD process for forming the semiconductor active layer, a laser beam is scanned unselectively across the surface of the substrate.
Claim 9
Dependent Claim
15 words
A device according to claim 1, wherein the light shielding layer is formed of chrome.
Claim 10
Dependent Claim
18 words
A device according to claim 6, wherein the laser CVD process is conducted in an atmosphere of silane.
Claim 11
Dependent Claim
15 words
A device according to claim 6, wherein the laser CVD process uses an argon laser.
Claim 12
Dependent Claim
18 words
A device according to claim 6, wherein the laser CVD process is conducted in an atmosphere of silane.
References Cited (Backward Citations)
JPS5329751A
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US4409605A
Cited
US4636038A
Cited
US4885616A
Cited
US4834507A
Cited
US4737712A
Cited
US4810060A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |