US4636038A
Expired / Lapsed
US
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Electric circuit member and liquid crystal display device using said member
Assignee: Canon Inc
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Filing: 1984-07-06
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Granted: 1987-01-13
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Expires: 2004-07-06
Abstract
Abstract An electric circuit member comprises a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array and an organic insulating layer formed over said inorganic insulating layer.
Inventors
- 👤 Nobuko Kitahara
- 👤 Osamu Takamatsu
- 👤 Tetsuya Kaneko
- 👤 Masao Sugata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:41
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/133345; G02F1/136; G02F1/1362; G02F1/1368; G02F1/1335; G02F1/133509; G02F1/133512
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
37 words
An electric circuit member comprising a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array and an organic insulating layer formed over said inorganic insulating layer.
Claim 2
Dependent Claim
37 words
An electric circuit member comprising a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array and an organic insulating layer formed over said inorganic insulating layer.
Claim 3
Dependent Claim
36 words
An electric circuit member according to claim 1, wherein the semiconductor layer constituting said thin film transistor is made of a material selected from the group consisting of at least Si, CdS, CdSe, CdTe and Te.
Claim 4
Dependent Claim
23 words
An electric circuit member according to claim 1, wherein the semiconductor layer constituting said thin film transistor is made of an amorphous material.
Claim 5
Dependent Claim
23 words
An electric circuit member according to claim 1, wherein the semiconductor layer constituting said thin film transistor is made of a microcrystalline material.
Claim 6
Dependent Claim
23 words
An electric circuit member according to claim 1, wherein the semiconductor layer constituting said thin film transistor is made of a polycrystalline material.
Claim 7
Dependent Claim
32 words
An electric ciruit member according to claim 1, wherein the semiconcuctor layer constituting said thin film transistor is made of amorphous silicon and said amorphous silicon contains hydrogen atoms and/or halogen atoms.
Claim 8
Dependent Claim
42 words
An electric circuit member according to claim 1, wherein the semiconductor layer constituting said thin film transistor is made of amorphous silicon and said amorphous silicon contains hydrogen atoms and/or halogen atoms in a total amount of 0.01 to 40 atomic %.
Claim 9
Dependent Claim
36 words
An electric circuit member according to claim 1, wherein said organic insulating layer is formed using a material selected from the group consisting of a thermosetting resin, a thermoplastic resin and a synthetic rubber type resin.
Claim 10
Dependent Claim
21 words
An electric circuit member according to claim 1, wherein the thickness of said organic insulating layer is 500 to 3000 Å.
Claim 11
Dependent Claim
21 words
An electric circuit member according to claim 1, wherein the thickness of said inorganic insulating layer is 500 to 3000 Å.
Claim 12
Dependent Claim
68 words
A liquid crystal display device comprising a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array, an organic insulating layer formed over said inorganic insulating layer and shading means for shading light to which said thin film transistor is sensitive, the surface part of said organic insulating layer in contact with liquid crystal having an orienting property.
Claim 13
Dependent Claim
68 words
A liquid crystal display device comprising a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array, an organic insulating layer formed over said inorganic insulating layer and shading means for shading light to which said thin film transistor is sensitive, the surface part of said organic insulating layer in contact with liquid crystal having an orienting property.
Claim 14
Dependent Claim
34 words
A device according to claim 11, wherein the semiconductor layer constituting said thin film transistor is made of a material selected from the group consisting of at least Si, CdS, CdSe, CdTe and Te.
Claim 15
Dependent Claim
21 words
A device according to claim 11, wherein the semiconductor layer constituting said thin film transistor is made of an amorphous material.
Claim 16
Dependent Claim
21 words
A device according to claim 11, wherein the semiconductor layer constituting said thin film transistor is made of a microcrystalline material.
Claim 17
Dependent Claim
21 words
A device according to claim 11, wherein the semiconductor layer constituting said thin film transistor is made of a polycrystalline material.
Claim 18
Dependent Claim
30 words
A device according to claim 11, wherein the semiconductor layer constituting said thin film transistor is made of amorphous silicon and said amorphous silicon contains hydrogen atoms and/or halogen atoms.
Claim 19
Dependent Claim
40 words
A device according to claim 11, wherein the semiconductor layer constituting said thin film transistor is made of amorphous silicon and said amorphous silicon contains hydrogen atoms and/or halogen atoms in a total amount of 0.01 to 40 atomic %.
Claim 20
Dependent Claim
34 words
A device according to claim 11, wherein said organic insulating layer is formed using a material selected from the group consisting of a thermosetting resin, a thermoplastic resin and a synthetic rubber type resin.
Claim 21
Dependent Claim
19 words
A device according to claim 11, wherein the thickness of said organic insulating layer is 500 to 3000 Å.
Claim 22
Dependent Claim
19 words
A device according to claim 11, wherein the thickness of said inorganic insulating layer is 500 to 3000 Å.
Claim 23
Dependent Claim
71 words
A liquid crystal display device comprising a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array, an organic insulating layer formed over said inorganic insulating layer, shading means for shading light to which said thin film transistor is sensitive and an orienting layer formed over at least the surface portion of said organic insulating layer situated at the display region.
Claim 24
Dependent Claim
71 words
A liquid crystal display device comprising a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array, an organic insulating layer formed over said inorganic insulating layer, shading means for shading light to which said thin film transistor is sensitive and an orienting layer formed over at least the surface portion of said organic insulating layer situated at the display region.
Claim 25
Dependent Claim
34 words
A device according to claim 21, wherein the semiconductor layer constituting said thin film transistor is made of a material selected from the group consisting of at least Si, CdS, CdSe, CdTe and Te.
Claim 26
Dependent Claim
21 words
A device according to claim 21, wherein the semiconductor layer constituting said thin film transistor is made of an amorphous material.
Claim 27
Dependent Claim
21 words
A device according to claim 21, wherein the semiconductor layer constituting said thin film transistor is made of a microcrystalline material.
Claim 28
Dependent Claim
21 words
A device according to claim 21, wherein the semiconductor layer constituting said thin film transistor is made of a polycrystalline material.
Claim 29
Dependent Claim
30 words
A device according to claim 21, wherein the semiconductor layer constituting said thin film transistor is made of amorphous silicon and said amorphous silicon contains hydrogen atoms and/or halogen atoms.
Claim 30
Dependent Claim
40 words
A device according to claim 21, wherein the semiconductor layer constituting said thin film transistor is made of amorphous silicon and said amorphous silicon contains hydrogen atoms and/or halogen atoms in a total amount of 0.01 to 40 atomic %.
Claim 31
Dependent Claim
34 words
A device according to claim 21, wherein said organic insulating layer is formed using a material selected from the group consisting of a thermosetting resin, a thermoplastic resin and a synthetic rubber type resin.
Claim 32
Dependent Claim
19 words
A device according to claim 21, wherein the thickness of said organic insulating layer is 500 to 3000 Å.
Claim 33
Dependent Claim
19 words
A device according to claim 21, wherein the thickness of said inorganic insulating layer is 500 to 3000 Å.
References Cited (Backward Citations)
US4252414A
Cited
US4448491A
Cited
JPS5862622A
Cited
US4568149A
Cited
US4568149B1
Cited
US4568149C1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-12 | 1990-07-14 | 1991-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-12 | 1994-07-14 | 1995-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-12 | 1998-07-14 | 1999-01-13 | $7700.00 | Window Closed / Lapsed |