Patent US6214749B1 successfully refreshed from Google Patents.
US6214749B1
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US
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Process for producing semiconductor devices
Assignee: Semiconductor Components Industries LLC
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Filing: 1997-10-21
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Granted: 2001-04-10
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Expires: 2017-10-21
Abstract
Abstract A semiconductor producing method includes the steps of: forming an SOG pre-film on a semimanufactured semiconductor device by means of spin-on-glass (SOG) process; and forming a modified SOG film by doping the SOG pre-film with at least one impurity ion selected from: inert gas ions; simple ions of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements; and ions of compounds containing any one of Groups IIIb, IVb, Vb, VIb, VIIb, IVa and Va elements.
Inventors
- 👤 Hiroyuki Watanabe
- 👤 Hideki Mizuhara
- 👤 Kaori Misawa
- 👤 Masaki Hirase
- 👤 Hiroyuki Aoe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 05:42
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/20; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6539; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/071; H10W20/074; H10W20/077; H10W20/081; H10W20/093; H10W20/095; H10P14/6342; H10P14/6518; H10P14/69215; H10P14/6923
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
60 words
A method for producing a semiconductor device, comprising the steps of: forming a SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; and forming a modified SOG film by doping said SOG film with at least one impurity ion including ions of fluorine-containing compounds selected from the group consisting of silicon fluoride and boron fluoride.
Claim 2
Independent Claim
60 words
A method for producing a semiconductor device, comprising the steps of: forming a SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; and forming a modified SOG film by doping said SOG film with at least one impurity ion including ions of fluorine-containing compounds selected from the group consisting of silicon fluoride and boron fluoride.
Claim 3
Dependent Claim
21 words
The method according to claim 1 , wherein said SOG film is one of organic SOG film and inorganic SOG film.
Claim 4
Dependent Claim
45 words
The method according to claim 1 , further comprising the step of forming an insulating film on said incomplete semiconductor device, prior to the formation of said SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 5
Independent Claim
67 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) Process; and forming a modified SOG film by doping said SOG film with boron ion; and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 6
Independent Claim
67 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) Process; and forming a modified SOG film by doping said SOG film with boron ion; and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 7
Dependent Claim
16 words
The method according to claim 4 , wherein said insulating film is a silicon oxide film.
Claim 8
Dependent Claim
16 words
The method according to claim 3 , wherein said insulating film is a silicon oxide film.
Claim 9
Independent Claim
88 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; forming a modified SOG film by doping said SOG film with at least one impurity ion selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) and radon (Rn); and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 10
Independent Claim
88 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; forming a modified SOG film by doping said SOG film with at least one impurity ion selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) and radon (Rn); and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 11
Dependent Claim
16 words
The method according to claim 7 , wherein said insulating film is a silicon oxide film.
Claim 12
Independent Claim
154 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; forming a modified SOG film by doping said SOG film with at least one impurity ion selected from the group consisting of boron (R), nitrogen (N), oxygen (O), aluminum (Al), sulfur (S), chlorine (Cl), gallium (Ga), germanium (Ge), arsenic (As), selenium (Se), bromine (Br), antimony (Sb), iodine (I), indium (In), tin (Sn), tellurium (Te), lead (Pb), bismuth (Bi), titanium (Ti), vanadium (V), niobium (Nb), hafnium (Hf) and tantalum (Ta); and ions of compounds containing any one of B, N, O, Al, S, Cl, Ga, Ge, As, Se, Br, Sb, I, In, Sn, Te, Pb, Bi, Ti, V, Nb, Hf and Ta; and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 13
Independent Claim
154 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; forming a modified SOG film by doping said SOG film with at least one impurity ion selected from the group consisting of boron (R), nitrogen (N), oxygen (O), aluminum (Al), sulfur (S), chlorine (Cl), gallium (Ga), germanium (Ge), arsenic (As), selenium (Se), bromine (Br), antimony (Sb), iodine (I), indium (In), tin (Sn), tellurium (Te), lead (Pb), bismuth (Bi), titanium (Ti), vanadium (V), niobium (Nb), hafnium (Hf) and tantalum (Ta); and ions of compounds containing any one of B, N, O, Al, S, Cl, Ga, Ge, As, Se, Br, Sb, I, In, Sn, Te, Pb, Bi, Ti, V, Nb, Hf and Ta; and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 14
Dependent Claim
16 words
The method according to claim 9 , wherein said insulating film is a silicon oxide film.
Claim 15
Dependent Claim
36 words
The method according to claim 1 further comprising the step of forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 16
Dependent Claim
16 words
The method according to claim 11 , wherein said insulating film is a silicon oxide film.
Claim 17
Independent Claim
95 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; forming a modified SOG film by doping said SOG film with at least one impurity ion selected from the group consisting of inert gas ions, ion of boron (B), ion of arsenic (As), ions of boron-containing compounds and ions of arsenic-containing compounds; and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 18
Independent Claim
95 words
A method for producing a semiconductor device, comprising the steps of: forming an SOG film on an incomplete semiconductor device by means of a spin-on-glass (SOG) process; forming a modified SOG film by doping said SOG film with at least one impurity ion selected from the group consisting of inert gas ions, ion of boron (B), ion of arsenic (As), ions of boron-containing compounds and ions of arsenic-containing compounds; and forming an insulating film on said modified SOG film, said insulating film having high insulating property, high mechanical strength and the property of blocking water.
Claim 19
Dependent Claim
16 words
The method according to claim 13 , wherein said insulating film is a silicon oxide film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-04-09 | 2004-10-09 | 2005-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-04-09 | 2008-10-09 | 2009-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-04-09 | 2012-10-09 | 2013-04-10 | $7700.00 | Window Closed / Lapsed |