US5817582A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for making a semiconductor device having a TEOS based spin-on-glass
Assignee: NXP USA Inc
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Filing: 1992-10-23
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Granted: 1998-10-06
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Expires: 2012-10-23
Abstract
Abstract In on form, a TEOS based spin-on-glass is made having on the order of 10% to 25% by volume of tetraethylorthosilicate, the equivalent of on the order of 0.1% to 3.0% by volume of 70% concentrated nitric acid, on the order of 60% to 90% by volume of alcohol, and the balance water. The spin-on-glass is applied to a semiconductor substrate and heated in order to densify the spin-on-glass.
Inventors
- 👤 Papu D. Maniar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6529; H10P14/6532; H10P14/69215; H10P14/6923; H10P14/6927
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
88 words
A process for making a semiconductor device comprising the steps of: providing a spin-on-glass having a composition consisting essentially of: a) between approximately 15% to 22% by volume of tetraethylorthosilicate; b) an amount of nitric acid equivalent to between approximately 0.2% to 1.3% by volume of 70% by weight nitric acid; c) between approximately 70% to 85% by volume of alcohol; and d) balance water; providing a semiconductor substrate; coating the semiconductor substrate with the spin-on-glass; and heating the coated semiconductor substrate in order to densify the spin-on-glass.
Claim 2
Dependent Claim
88 words
A process for making a semiconductor device comprising the steps of: providing a spin-on-glass having a composition consisting essentially of: a) between approximately 15% to 22% by volume of tetraethylorthosilicate; b) an amount of nitric acid equivalent to between approximately 0.2% to 1.3% by volume of 70% by weight nitric acid; c) between approximately 70% to 85% by volume of alcohol; and d) balance water; providing a semiconductor substrate; coating the semiconductor substrate with the spin-on-glass; and heating the coated semiconductor substrate in order to densify the spin-on-glass.
Claim 3
Dependent Claim
27 words
The process of claim 1 wherein the step of providing a spin-on-glass comprises providing a spin-on-glass having between approximately 70% to 85% by volume of isopropyl alcohol.
Claim 4
Dependent Claim
69 words
The process of claim 1 wherein the step of providing a spin-on-glass further comprises providing a spin-on-glass having a composition consisting essentially of: a) between approximately 16.8% to 19.0% by volume of tetraethylorthosilicate; b) an amount of nitric acid equivalent to between approximately 0.4% to 1.1% by volume of 70% by weight nitric acid; c) between approximately 74.5% to 81.5% by volume of isopropyl alcohol; and d) balance water.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-05 | 2002-04-06 | 2002-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-05 | 2006-04-06 | 2006-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-05 | 2010-04-06 | 2010-10-06 | $7700.00 | Window Closed / Lapsed |