US5084412A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device with a copper wiring layer
Assignee: Toshiba Corp
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Filing: 1990-10-01
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Granted: 1992-01-28
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Expires: 2010-10-01
Abstract
Abstract According to this invention, there is provided to a semiconductor device comprising a semiconductor substrate on which an element is formed, an insulating interlayer formed on the semiconductor substrate, and a wiring layer having a structure in which a surface of a copper layer in a crystal state is covered with a nitride of a metal not forming an intermetallic compound with copper and the metal and/or the metal nitride is present at grain boundaries of the copper layer.
Inventors
- 👤 Yasushi Nakasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10P; H10P14/00; H10P14/40; H10P14/412; H10W20/01; H10W20/031; H10W20/064; H10W20/425; H10W20/45; H10W20/47; H10W20/48; Y; Y10; Y10S; Y10S148/00; Y10S148/035
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
147 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an element on a semiconductor substrate; depositing an insulating interlayer on said semiconductor substrate; sequentially depositing a thin layer made of a metal not forming an intermetallic compound with copper and a copper layer on said insulating interlayer to form a stacked layer; patterning said stacked layer; and forming a wiring layer having a structure in which said patterned stacked layer is heat-treated in a nitrogen containing atmosphere to diffuse a metal of said metal thin layer to a peripheral surface of a copper layer through said copper layer, said diffused metal is nitrided to cover a surface of the copper layer in a crystal state with a nitride of a metal not forming an intermetallic compound with copper, and said metal and/or said metal nitride is present at grain boundaries of the copper layer.
Claim 2
Independent Claim
147 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an element on a semiconductor substrate; depositing an insulating interlayer on said semiconductor substrate; sequentially depositing a thin layer made of a metal not forming an intermetallic compound with copper and a copper layer on said insulating interlayer to form a stacked layer; patterning said stacked layer; and forming a wiring layer having a structure in which said patterned stacked layer is heat-treated in a nitrogen containing atmosphere to diffuse a metal of said metal thin layer to a peripheral surface of a copper layer through said copper layer, said diffused metal is nitrided to cover a surface of the copper layer in a crystal state with a nitride of a metal not forming an intermetallic compound with copper, and said metal and/or said metal nitride is present at grain boundaries of the copper layer.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein said metal thin layer is made of at least any one metal selected from a group consisting of vanadium, niobium, tantalum, chromium, molybdenum, and tungsten.
Claim 4
Dependent Claim
35 words
The method according to claim 1, wherein after said metal is diffused in said copper layer from said metal thin layer in said heat treatment, the metal thin layer is left under said wiring layer.
Claim 5
Dependent Claim
29 words
The method according to claim 2, wherein said metal thin layer is made of chromium, and said heat treatment is performed at a temperature of 600 to 800° C.
Claim 6
Dependent Claim
29 words
The method according to claim 2, wherein said metal thin layer is made of niobium, and said heat treatment is performed at a temperature of 600 to 800° C.
Claim 7
Dependent Claim
17 words
The method according to claim 1, wherein said heat treatment in the nitrogen atmosphere is plasma nitriding.
Claim 8
Dependent Claim
27 words
The method according to claim 1, wherein before said heat treatment in the nitrogen containing atmosphere is performed, a heat treatment is performed in an inert gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |