US6013578A
Expired / Lapsed
US
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Method for forming a metal wiring structure of a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1997-02-28
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Granted: 2000-01-11
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Expires: 2017-02-28
Abstract
Abstract A metal wiring structure includes a conduction line, an insulator film for electrically insulating the conduction line, and a transmutation layer formed as the density of a portion of the insulator film adjacent to the conduction line is increased or by adding impurities to the insulator film. A metal wiring forming method for a semiconductor device, includes the step of forming a trench in a given portion of a silicon oxidation film formed on a semiconductor substrate, forming a transmutation layer on a surface of the silicon oxidation film, and depositing a conductive material on the transmutation layer to form a conduction line, whereby diffusion of the conductive material is prevented.
Inventors
- 👤 Young Kwon Jun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/01
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
57 words
A method for forming a metal wiring of a semiconductor device, comprising the steps of: forming a trench in a silicon oxidation film formed on a semiconductor substrate; forming a transmutation layer on a bottom of the trench in said silicon oxidation film; and depositing a conductive material on said transmutation layer to form a conduction line.
Claim 2
Independent Claim
57 words
A method for forming a metal wiring of a semiconductor device, comprising the steps of: forming a trench in a silicon oxidation film formed on a semiconductor substrate; forming a transmutation layer on a bottom of the trench in said silicon oxidation film; and depositing a conductive material on said transmutation layer to form a conduction line.
Claim 3
Dependent Claim
38 words
A method as claimed in claim 1, wherein said transmutation layer is plasma-processed under a pressure of approximately 0.5-10 torr, Rf power of approximately 0.5-2 W/cm 2 and a temperature of approximately 350-450° C. during approximately 10-180 seconds.
Claim 4
Dependent Claim
18 words
A method as claimed in claim 1, wherein said conductive material includes one of copper, aluminum and silver.
Claim 5
Dependent Claim
58 words
A method as claimed in claim 1, wherein said transmutation layer is formed of a compound type of Cu 3 B 2 , Cu 3 P, Cu 3 Si or Cu 2 ,N, or an oxide type of Cu(BO 2 ) 2 , Cu 3 (PO 4 ) 2 , CuSiO 4 or Cu2(NO 3 ) 2 .
Claim 6
Dependent Claim
19 words
A method as claimed in claim 1, wherein said transmutation layer includes one of B, P, Si and N.
Claim 7
Dependent Claim
43 words
A method as claimed in claim 1, wherein said transmutation layer is formed using one or more gases selected from gas types of BH 3 , PH 3 , SiH 4 , Si 2 H 6 , NH 3 and N 2 O.
Claim 8
Dependent Claim
34 words
A method as claimed in claim 6, wherein said step of forming the transmutation layer includes the step of: injecting said one or more gases into the silicon oxidation film using a carrier gas.
Claim 9
Dependent Claim
78 words
A metal wiring forming method for a semiconductor device, comprising the steps of: selectively removing a silicon oxidation film having a lower conduction line to expose a surface of the lower conduction line through a trench formed in the silicon oxidation film; forming a transmutation layer on a bottom of the trench by transforming the exposed surface of the lower conduction line; and forming a conductive material layer on said transmutation layer to form an upper conduction line.
Claim 10
Dependent Claim
78 words
A metal wiring forming method for a semiconductor device, comprising the steps of: selectively removing a silicon oxidation film having a lower conduction line to expose a surface of the lower conduction line through a trench formed in the silicon oxidation film; forming a transmutation layer on a bottom of the trench by transforming the exposed surface of the lower conduction line; and forming a conductive material layer on said transmutation layer to form an upper conduction line.
Claim 11
Dependent Claim
27 words
A metal wiring forming method as claimed in claim 8, wherein said surface of said lower conduction line includes a metal layer having a high melting point.
Claim 12
Dependent Claim
41 words
A metal wiring forming method as claimed in claim 8, wherein said transmutation layer is plasma-processed under a pressure of approximately 0.5-10 torr, Rf power of approximately 0.5-2 W/cm 2 and a temperature of approximately 350-450° C. during approximately 10-180 seconds.
Claim 13
Dependent Claim
31 words
A metal wiring forming method as claimed in claim 8, further comprising the step of: forming a metal barrier on the surface of said lower conduction line by a plasma process.
Claim 14
Dependent Claim
28 words
A metal wiring forming method as claimed in claim 8, wherein said conductive material layer for forming said upper conduction line includes one of copper, aluminum and silver.
Claim 15
Dependent Claim
20 words
A metal wiring forming method as claimed in claim 8, wherein said transmutation layer includes one of Si and N.
Claim 16
Dependent Claim
20 words
A metal wiring forming method as claimed in claim 11, wherein said metal barrier includes one of Si and N.
Claim 17
Dependent Claim
24 words
A metal wiring forming method as claimed in claim 11, wherein said metal barrier formed on a conductive material layer is silicide or nitride.
Claim 18
Independent Claim
76 words
A method for forming wiring for a semiconductor device, comprising the steps of: providing an insulator film; forming a conduction line, made of a conductive material layer, on said insulator film; and forming a transmutation layer covering said conduction line and said insulator film, wherein an impurity density level of said transmutation layer and an upper portion of said insulator film is higher than an impurity density level of a lower portion of said insulator film.
Claim 19
Independent Claim
76 words
A method for forming wiring for a semiconductor device, comprising the steps of: providing an insulator film; forming a conduction line, made of a conductive material layer, on said insulator film; and forming a transmutation layer covering said conduction line and said insulator film, wherein an impurity density level of said transmutation layer and an upper portion of said insulator film is higher than an impurity density level of a lower portion of said insulator film.
Claim 20
Dependent Claim
39 words
A method as claimed in claim 16, wherein said step of forming the transmutation layer includes the step of: adding impurities to said insulator film, said impurities including one or more atom types of B, P, Si, and N.
Claim 21
Dependent Claim
58 words
A method as claimed in claim 16, wherein said transmutation layer is formed of a compound type of CU 3 B 2 , Cu 3 P, Cu 3 Si or Cu 2 N, or an oxide type of Cu(BO 2 ) 2 , Cu 3 (PO 4 ) 2 , CuSiO 4 or Cu2(NO 3 ) 2 .
Claim 22
Dependent Claim
24 words
A method as claimed in claim 16, wherein a density of the upper portion of said insulator film is approximately 2.22 g/cm3 or more.
Claim 23
Dependent Claim
49 words
A method as claimed in claim 16, wherein said providing step includes the step of: injecting one or more gases selected from gas types of BH 3 , PH 3 , SiH 4 , Si 2 H 6 , NH 3 and N 2 O into said insulator film.
Claim 24
Dependent Claim
27 words
A method as claimed in claim 20, wherein said one or more gases are introduced into the insulator film using a N 2 gas or Ar gas.
Claim 25
Dependent Claim
19 words
A method as claimed in claim 1, wherein in said depositing step, the conductive material substantially fills the trench.
Claim 26
Dependent Claim
35 words
A method as claimed in claim 22, wherein in said depositing step, a top surface of the deposited conductive material in the trench is substantially coplaner with a top surface of the formed transmutation layer.
Claim 27
Dependent Claim
37 words
A method as claimed in claim 1, wherein in said step of forming the transmutation layer, the transmutation layer is formed on side surfaces of the trench and on a top surface of the silicon oxidation film.
Claim 28
Dependent Claim
32 words
A method as claimed in claim 8, wherein in said step of forming the conductive material layer, the conductive material layer completely fills the trench and has a substantially flat top surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-01-10 | 2003-07-12 | 2004-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-10 | 2007-07-12 | 2008-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-10 | 2011-07-12 | 2012-01-11 | $7700.00 | Window Closed / Lapsed |