Manufacture of semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To form an interlayer insulating film of high flatness by a method wherein, when a coated film is piled up on insulating film formed by a vapor growth method and is etched back, an inert seed element is implanted in order to make an etch-back rate of the coated film and the insulating film uniform. CONSTITUTION:A silicon oxide film 104 formed by a vapor growth method is coated with a silica film; a baking operation is executed; a coated film 105 is formed. An atom is accelerated in a gas plasma of argon; argon is implanted into the silicon oxide film 104 at an energy of 80 to 100keV. The whole surface of the coated film 105 is etched back; the coated film on a wide wiring layer 103a is removed completely. A silicon oxide film 106 is formed again by the vapor growth method. An opening 108 is made in a prescribed position; after that, an aluminum layer is formed on an insulating layer and on the whole surface of the opening part; after that, second-layer wiring part layers 107a, 107b are formed. When ions of argon are implanted, a bond of atoms inside the silicon oxide film 104 is divided; an etch rate becomes high and its value is nearly identical to an etch rate of the coated film; accordingly, a uniform etch-back operation can be executed; while the flatness is improved.

Inventors

• 👤 Hiroyuki Nakamura
• 👤 弘幸 中村

Bibliographic Details