US5753975A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with improved adhesion between titanium-based metal wiring layer and insulation film
Assignee: Toshiba Corp
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Filing: 1995-08-28
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Granted: 1998-05-19
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Expires: 2015-08-28
Abstract
Abstract A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1x1020 atoms/cm3.
Inventors
- 👤 Tadashi Matsuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:11
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6536; H10P14/66; H10P14/662; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P95/00; H10W20/071; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
59 words
A semiconductor device, comprising: a substrate; an insulation film formed above said substrate and containing silicon-fluorine bonds; and a titanium-based metal wiring layer formed on said insulation film, said titanium-based metal wiring layer containing fluorine diffused from said insulation film and having a fluorine concentration of less than 1×10 20 atoms/cm 3 at an interface with said insulation film.
Claim 2
Dependent Claim
59 words
A semiconductor device, comprising: a substrate; an insulation film formed above said substrate and containing silicon-fluorine bonds; and a titanium-based metal wiring layer formed on said insulation film, said titanium-based metal wiring layer containing fluorine diffused from said insulation film and having a fluorine concentration of less than 1×10 20 atoms/cm 3 at an interface with said insulation film.
Claim 3
Dependent Claim
22 words
The device of claim 1, wherein the fluorine concentration in said insulation film is substantially uniform in a direction of film thickness.
Claim 4
Dependent Claim
33 words
The device of claim 1, wherein the fluorine concentration in said insulation film becomes higher in accordance with a distance away from said titanium-based metal wiring layer in a direction of film thickness.
Claim 5
Dependent Claim
29 words
The device of claim 1, wherein said insulation film has a region where the fluorine concentration in said insulation film is not less than 1×10 21 atoms/cm 3 .
Claim 6
Dependent Claim
15 words
The device of claim 1, wherein said insulation film is formed of a single-layered film.
Claim 7
Dependent Claim
62 words
The device of claim 1, wherein said insulation film is formed of a multi-layered film and a first fluorine concentration of a first layer of said multi-layered film is less than a second fluorine concentration of a second layer of said multi-layered film, said first layer being adjacent said titanium-based metal wiring layer and said second layer being adjacent said first layer.
Claim 8
Dependent Claim
14 words
The device of claim 1, wherein said titanium-based metal wiring layer contains titanium nitride.
Claim 9
Dependent Claim
33 words
The semiconductor device of claim 1, wherein said fluorine concentration of said titanium-based metal wiring layer is less than 1×10 20 atoms/cm 3 at every point of said interface with said insulation film.
Claim 10
Dependent Claim
98 words
A semiconductor device, comprising: a substrate; an insulation film formed above said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film; and a reaction layer formed between said insulation film and said titanium-based metal wiring layer and containing at least titanium, silicon, and oxygen, wherein said reaction layer has, at least on a central portion of said reaction layer in a direction of film thickness, a region having ratios of a titanium concentration to a silicon concentration and of said titanium concentration to an oxygen concentration of not more than 1, respectively.
Claim 11
Dependent Claim
98 words
A semiconductor device, comprising: a substrate; an insulation film formed above said substrate and containing silicon-fluorine bonds; a titanium-based metal wiring layer formed on said insulation film; and a reaction layer formed between said insulation film and said titanium-based metal wiring layer and containing at least titanium, silicon, and oxygen, wherein said reaction layer has, at least on a central portion of said reaction layer in a direction of film thickness, a region having ratios of a titanium concentration to a silicon concentration and of said titanium concentration to an oxygen concentration of not more than 1, respectively.
Claim 12
Dependent Claim
53 words
The device of claim 9, including a bonding pad formed on said metal wiring layer, wherein said region of said reaction layer, having the ratios of the titanium concentration to the silicon concentration and of the titanium concentration to the oxygen concentration of not more than 1, is formed below said bonding pad.
Claim 13
Dependent Claim
59 words
The device of claim 9, wherein the fluorine concentration in said region of said reaction layer, having the ratios of the titanium concentration to the silicon concentration and of the titanium concentration to the oxygen concentration of not more than 1, and a fluorine concentration in said titanium-based metal wiring layer are less than 1×10 20 atoms/cm 3 .
Claim 14
Dependent Claim
48 words
The device of claim 9, wherein an average film thickness of said reaction layer, in said region having the ratios of the titanium concentration to the silicon concentration and of the titanium concentration to the oxygen concentration of not more than 1, is not more than 3.5 nm.
Claim 15
Dependent Claim
47 words
The device of claim 9, including a fluorine diffusion suppression film formed immediately below said region of said reaction layer, said region having the ratios of the titanium concentration to the silicon concentration and of the titanium concentration to the oxygen concentration of not more than 1.
Claim 16
Dependent Claim
34 words
The device of claim 13, wherein said fluorine diffusion suppression film includes a material selected from the group consisting of silicon, silicon nitride, silicon oxide, a metal, and a multi-layered member of these materials.
Claim 17
Dependent Claim
96 words
The device of claim 9, wherein a film thickness of said insulation film formed immediately below said reaction layer, in said region having the ratios of the titanium concentration to the silicon concentration and of the titanium concentration to the oxygen concentration of not more than 1, is smaller than a film thickness of said insulation film formed immediately below said reaction layer in an external region outside of said region having the ratios of the titanium concentration to the silicon concentration and of the titanium concentration to the oxygen concentration of not more than 1.
References Cited (Backward Citations)
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