Flash memory

Abstract

Abstract One type of manufacturing method for flash memory with split-gateconsists of: 1. providing one silicon substrate with field oxide layer and component area; 2. sequentially forming the tunnel oxide layer, the first polysiliconlayer, the first dielectric layer with ONO structure, the secondpolysilicon layer and one Nitride layer; 3. putting photo-resistance and overlaying the area which is to be formedas floating gate, then sequentially etching the exposed Nitride layer,the second polysilicon layer, the dielectric layer with ONO structureand the first polysilicon layer to form floating gate, then removingthe photo-resistance; 4. forming the second dielectric layer with ONO structure with anisotropicetching to etchback in order to form spacer dielectric layer with ONOstructure on the remaining spacer of the first polysilicon layer, thefirst dielectric layer with ONO structure, the second polysiliconlayer and Nitride layer; 5. etching the exposed tunnel oxide layer out of the floating gate area; 6. forma gate oxide layer; 7. etching the remaining Nitride layer; 8. depositing the third polysilicon layer and molding to word line controlgate; 9. providing appropriate metallurgy to connect the integrated circuit offlash memory needed by component forming.

Inventors

• 👤 Yeun-Ding Horng
• 👤 Huei-Hwang Chern

Bibliographic Details