Patent US5976969A successfully refreshed from Google Patents.
US5976969A
Expired / Lapsed
US
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Method for forming an aluminum contact
Assignee: STMicroelectronics lnc USA
•
Filing: 1997-06-27
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Granted: 1999-11-02
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Expires: 2017-06-27
Abstract
Abstract A method for forming an aluminum contact through an insulating layer includes the formation of an opening. A barrier layer is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer, and aluminum deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum is deposited over the refractory metal layer without breaking vacuum.
Inventors
- 👤 Yih-Shung Lin
- 👤 Fu-Tai Liou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/049; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; C23C16/06; C23C16/18; C23C16/20; H10W20/033; H10W20/035; H10W20/048; H10W20/056; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
97 words
A method for forming an interlevel aluminum contact for an integrated circuit device, comprising the steps of: forming an opening through an insulating layer to expose a conducting structure; forming a barrier layer over the insulating layer and extending into the opening to cover the conducting structure; forming an upper layer of refractory metal over the barrier layer to a thickness of between approximately 50 Å and 600 Å; and depositing aluminum over the upper refractory metal layer at a temperature and rate which maximizes surface mobility of the aluminum, allowing it to completely fill the opening.
Claim 2
Independent Claim
97 words
A method for forming an interlevel aluminum contact for an integrated circuit device, comprising the steps of: forming an opening through an insulating layer to expose a conducting structure; forming a barrier layer over the insulating layer and extending into the opening to cover the conducting structure; forming an upper layer of refractory metal over the barrier layer to a thickness of between approximately 50 Å and 600 Å; and depositing aluminum over the upper refractory metal layer at a temperature and rate which maximizes surface mobility of the aluminum, allowing it to completely fill the opening.
Claim 3
Dependent Claim
69 words
The method of claim 1, wherein the step of depositing aluminum comprises the steps of: forming a first aluminum layer at a temperature of less than approximately 375° C.; increasing the temperature of the device to a temperature between approximately 400° C. and 550° C.; and during the temperature increasing step, continuing to deposit aluminum over the first aluminum layer at a rate between approximately 30 and 50 Å/sec.
Claim 4
Dependent Claim
24 words
The method of claim 2, further comprising; after the continuing to deposit step has deposited approximately 2000 Å of aluminum, increasing the deposition rate.
Claim 5
Dependent Claim
13 words
The method of claim 1, wherein the upper refractory metal layer comprises titanium.
Claim 6
Independent Claim
93 words
A method for forming an interlevel aluminum contact for an integrated circuit device, comprising the steps of: forming an opening through an insulating layer to expose a conducting structure; forming an upper layer of refractory metal, over the insulating layer and extending into the opening to cover the conducting structure, to a thickness of greater than approximately 50 Å and less than approximately 600 Å; and depositing aluminum over the upper refractory metal layer at a temperature and rate which maximizes surface mobility of the aluminum, allowing it to completely fill the opening.
Claim 7
Independent Claim
93 words
A method for forming an interlevel aluminum contact for an integrated circuit device, comprising the steps of: forming an opening through an insulating layer to expose a conducting structure; forming an upper layer of refractory metal, over the insulating layer and extending into the opening to cover the conducting structure, to a thickness of greater than approximately 50 Å and less than approximately 600 Å; and depositing aluminum over the upper refractory metal layer at a temperature and rate which maximizes surface mobility of the aluminum, allowing it to completely fill the opening.
Claim 8
Dependent Claim
69 words
The method of claim 5, wherein the step of depositing aluminum comprises the steps of: forming a first aluminum layer at a temperature of less than approximately 375° C.; increasing the temperature of the device to a temperature between approximately 400° C. and 550° C.; and during the temperature increasing step, continuing to deposit aluminum over the first aluminum layer at a rate between approximately 30 and 50 Å/sec.
Claim 9
Dependent Claim
24 words
The method of claim 6, further comprising; after the continuing to deposit step has deposited approximately 2000 Å of aluminum, increasing the deposition rate.
References Cited (Backward Citations)
US3158504A
Cited
US3900598A
Cited
JPS52137948A
Cited
US4107726A
Cited
JPS5471564A
Cited
US4436582A
Cited
JPS57139939A
Cited
JPS5846641A
Cited
GB2112566A
Cited
GB2128636A
Cited
EP0107259A2
Cited
EP0132720A1
Cited
US4502209A
Cited
EP0137701A1
Cited
US4592802A
Cited
JPS60227446A
Cited
US4566177A
Cited
US4661228A
Cited
EP0168828A2
Cited
US4772571A
Cited
JPS61142739A
Cited
JPS62232334A
Cited
US4892844A
Cited
US4759533A
Cited
EP0257277A2
Cited
JPS63124447A
Cited
EP0269019A2
Cited
JPS63136547A
Cited
JPS63137230A
Cited
US4756810A
Cited
EP0273715A2
Cited
EP0276087A2
Cited
US4988423A
Cited
JPS6460036A
Cited
JPS6477122A
Cited
EP0310108A2
Cited
EP0329227A1
Cited
US4837183A
Cited
EP0351001A1
Cited
US5106781A
Cited
US4976839A
Cited
US4944961A
Cited
US4970176A
Cited
US4994162A
Cited
US4975389A
Cited
EP0430403A2
Cited
EP0451571A2
Cited
US5108570A
Cited
US5108951A
Cited
EP0488628A2
Cited
EP0488264A2
Cited
EP0499241A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-01 | 2003-05-03 | 2003-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-01 | 2007-05-03 | 2007-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-01 | 2011-05-03 | 2011-11-02 | $7700.00 | Window Closed / Lapsed |