US5340770A
Expired / Lapsed
US
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Method of making a shallow junction by using first and second SOG layers
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1992-10-23
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Granted: 1994-08-23
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Expires: 2012-10-23
Abstract
Abstract A shallow junction spin on glass (SOG) process which provides shallow junction semiconductor devices without defects and leaky junctions. The process includes spinning first and second SOG layers containing first and second dopants onto a semiconductor substrate and diffusing the dopants into the substrate to form first and second junctions. The diffusion time and temperature are controlled so as to produce junctions having depths less than a predetermined maximum depth. Insulating and metal interconnect layers are deposited on top of the SOG layers. The insulating layer may include boron-phosphorus silicon glass (BPSG).
Inventors
- 👤 Derryl D. J. Allman
- 👤 Dim-Lee Kwong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:19
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/0186; H10D84/02; H10D84/03; H10D84/038; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
98 words
A method for producing a shallow junction semiconductor device comprising the steps of: spinning a layer of silicon oxide glass containing a dopant over an underlying semiconductor substrate; removing a portion of the SOG layer including the substeps of masking the SOG layer with an emulsion while leaving the portion unmasked, removing the portion, and removing the emulsion; spinning another layer of silicon oxide glass containing another dopant over the one layer and in place of the removed portion; and driving the one and the other dopant into the semiconductor layer to form first and second shallow junctions.
Claim 2
Independent Claim
98 words
A method for producing a shallow junction semiconductor device comprising the steps of: spinning a layer of silicon oxide glass containing a dopant over an underlying semiconductor substrate; removing a portion of the SOG layer including the substeps of masking the SOG layer with an emulsion while leaving the portion unmasked, removing the portion, and removing the emulsion; spinning another layer of silicon oxide glass containing another dopant over the one layer and in place of the removed portion; and driving the one and the other dopant into the semiconductor layer to form first and second shallow junctions.
Claim 3
Dependent Claim
13 words
The method as recited in claim 1, wherein the device is a transistor.
Claim 4
Dependent Claim
12 words
The method as recited in claim 1, wherein the substrate is silicon.
Claim 5
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant is boron.
Claim 6
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant is phosphorus.
Claim 7
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant is arsenic.
Claim 8
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant is gold.
Claim 9
Dependent Claim
22 words
The method as recited in claim 1, wherein the step of removing the portion comprises the substep of: etching away the portion.
Claim 10
Dependent Claim
24 words
The method as recited in claim 1, wherein the step of removing the emulsion comprises the substep of performing a plasma oxygen ashing process.
Claim 11
Dependent Claim
23 words
The method as recited in claim 1, wherein the step of removing the emulsion comprises the substep of performing a solvent clean process.
Claim 12
Dependent Claim
35 words
The method as recited in claim 1, wherein the step of driving comprises the substep of: heating the device at a temperature of about 1100 degrees Celsius and for a time of about ten seconds.
Claim 13
Dependent Claim
16 words
The method as recited in claim 1 further comprising the step of: depositing an insulating layer.
Claim 14
Dependent Claim
15 words
The method as recited in claim 12, wherein the insulating layer comprises undoped silicon oxide.
Claim 15
Dependent Claim
16 words
The method as recited in claim 12, wherein the insulating layer comprises boron-phosphorus silicon glass (BPSG).
Claim 16
Dependent Claim
50 words
The method as recited in claim 14 further comprising the step of planarizing the device including the substeps of: densifying the insulating layer; etching a backside of the substrate; removing a portion of the insulating layer; reflowing the insulating layer; and depositing a metal interconnect layer over the insulating layer.
Claim 17
Dependent Claim
29 words
The method as recited in claim 11 further comprising the steps of: etching a backside of the semiconductor substrate; and depositing a metal interconnect layer over the insulating layer.
Claim 18
Independent Claim
87 words
A method for producing a shallow junction semiconductor device comprising the steps of: spinning a layer of silicon oxide glass containing a dopant over an underlying semiconductor substrate; removing a portion of the SOG layer; spinning another layer of silicon oxide glass containing another dopant over the one layer and in place of the removed portion; driving the one and the other dopant into the semiconductor layer to form first and second shallow junctions; and depositing an insulating layer over the one and the other SOG layers.
Claim 19
Independent Claim
87 words
A method for producing a shallow junction semiconductor device comprising the steps of: spinning a layer of silicon oxide glass containing a dopant over an underlying semiconductor substrate; removing a portion of the SOG layer; spinning another layer of silicon oxide glass containing another dopant over the one layer and in place of the removed portion; driving the one and the other dopant into the semiconductor layer to form first and second shallow junctions; and depositing an insulating layer over the one and the other SOG layers.
Claim 20
Dependent Claim
15 words
The method as recited in claim 17, wherein the insulating layer comprises undoped silicon oxide.
Claim 21
Dependent Claim
16 words
The method as recited in claim 17, wherein the insulating layer comprises boron-phosphorus silicon glass (BPSG).
Claim 22
Dependent Claim
50 words
The method as recited in claim 19 further comprising the step of planarizing the device including the substeps of: densifying the insulating layer; etching a backside of the substrate; removing a portion of the insulating layer; reflowing the insulating layer; and depositing a metal interconnect layer over the insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-22 | 1998-02-21 | 1998-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-22 | 2002-02-21 | 2002-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-22 | 2006-02-21 | 2006-08-23 | $7700.00 | Window Closed / Lapsed |