Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To realize lower heat processing temperature or curtailment of heat processing period, if temperature is the same, by conducting the spin-on diffusion on a semiconductor substrate under the environmental condition of the atmospheric pressure or higher including oxygen of 0.1-100% after coating of the dopant. CONSTITUTION:A thermal oxide film 2 is first formed on the surface of a semiconductor substrate 1 and it is then patterned by the photolithography. Next, the dopant is coated to form a film 3 including impurity of 600Angstrom or so. With the heat processing at several hundreds degree ( deg.C), alcohol is eliminated and simultaneously glass layer 4 of impurity is formed. Next, the heat processing is carried out at the temperature of about 1000 deg.C under the environmental condition of atmospheric pressure including oxygen of 0.1-100%. Thereafter, the spin-on diffusion and drive.in process are carried out under the pressure higher than the atmospheric pressure in place of the normal pressure, thereby forming an impurity diffused layer 5.

Inventors

• 👤 Tetsumasa Okamoto

Bibliographic Details