US4661177A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
Assignee: Varian Semiconductor Equipment Associates Inc
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Filing: 1985-10-08
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Granted: 1987-04-28
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Expires: 2005-10-08
Abstract
Abstract Doping of a semiconductor wafer is accomplished by placing the wafer in close proximity to a solid planar dopant source and rapidly heating the combination to a high temperature for a short time in a rapid thermal processing apparatus.
Inventors
- 👤 Ronald A. Powell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:50
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P32/30; H10P32/302; H10P34/00; H10P34/40; H10P34/42; H10P34/422; Y; Y10; Y10S; Y10S148/00; Y10S148/004
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
81 words
A method of diffusing a material into a planar workpiece comprising the steps of: inserting a solid planar dopant material source into a rapid thermal processing apparatus, placing a planar workpiece in close proximity to said solid planar dopant material source, and rapidly heating said solid planar dopant material source and independently rapidly heating said planar workpiece to high temperature for a short period of time in order to diffuse said dopant material into said planar workpiece without introducing process gas.
Claim 2
Independent Claim
81 words
A method of diffusing a material into a planar workpiece comprising the steps of: inserting a solid planar dopant material source into a rapid thermal processing apparatus, placing a planar workpiece in close proximity to said solid planar dopant material source, and rapidly heating said solid planar dopant material source and independently rapidly heating said planar workpiece to high temperature for a short period of time in order to diffuse said dopant material into said planar workpiece without introducing process gas.
Claim 3
Dependent Claim
25 words
A method as in claim 1 wherein said solid planar dopant material source and said planar workpiece are heated to temperature greater than 800° C.
Claim 4
Dependent Claim
28 words
A method as in claim 2 wherein said rapid heating of said solid planar dopant material source takes place in a period of time less than 200 seconds.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-27 | 1990-10-27 | 1991-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-27 | 1994-10-27 | 1995-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-27 | 1998-10-27 | 1999-04-28 | $7700.00 | Window Closed / Lapsed |