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US4417347A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor processor incorporating blackbody radiation source with constant planar energy flux

Assignee: Varian Medical Systems Inc
•
Filing: 1981-05-12
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Granted: 1983-11-22
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Expires: 2001-05-12
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Abstract

Abstract A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.

Inventors

  • 👤 Richard S. Muka
  • 👤 Carl J. Russo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 00:50
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B33/00; H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 84 words
An apparatus for thermally processing a semiconductor material, comprising: a processing chamber; vacuum generation means for controlling the pressure in said processing chamber; means for introducing and removing said semiconductor material from said processing chamber; a platen mounted within said processing chamber for receiving said material upon introduction, holding said material during thermal treatment and delivering said material for removal; and a blackbody source having a constant planar energy flux characteristic, said source being positioned in opposition to said platen during said thermal treatment.
Claim 2
Independent Claim 84 words
An apparatus for thermally processing a semiconductor material, comprising: a processing chamber; vacuum generation means for controlling the pressure in said processing chamber; means for introducing and removing said semiconductor material from said processing chamber; a platen mounted within said processing chamber for receiving said material upon introduction, holding said material during thermal treatment and delivering said material for removal; and a blackbody source having a constant planar energy flux characteristic, said source being positioned in opposition to said platen during said thermal treatment.
Claim 3
Dependent Claim 19 words
An apparatus in accordance with claim 1 wherein said semiconductor material comprises a wafer of single crystal semiconductor material.
Claim 4
Dependent Claim 28 words
An apparatus in accordance with claim 2 wherein said blackbody source is positioned less than one-half inch from said platen in essentially parallel planar alignment during thermal treatment.
Claim 5
Dependent Claim 27 words
An apparatus in accordance with claim 2 wherein said blackbody source has an effective area of constant planar emission larger than the area of said semiconductor wafer.
Claim 6
Dependent Claim 22 words
An apparatus in accordance with claim 4 wherein said platen includes active cooling means to cool the main body of said platen.
Claim 7
Dependent Claim 24 words
An apparatus in accordance with claim 4 wherein said platen has at least one thermal shield positioned between said wafer and said main body.
Claim 8
Dependent Claim 32 words
An apparatus in accordance with claim 6 wherein the outside shield of said at least one thermal shield has a concave-like shape so that said wafer is contacted only around its periphery.
Claim 9
Dependent Claim 27 words
An apparatus in accordance with claim 7 in combination with refractory metal spring stops to receive and stop said wafer as it is inserted into said platen.

References Cited (Backward Citations)

US3138697A Cited
US3263016A Cited
US3901183A Cited
US3954191A Cited
US4311427A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-11-21 1987-05-23 1987-11-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-11-21 1991-05-23 1991-11-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-11-21 1995-05-23 1995-11-22 $7700.00 Window Closed / Lapsed

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