Abstract A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.
An apparatus for thermally processing a semiconductor material, comprising: a processing chamber; vacuum generation means for controlling the pressure in said processing chamber; means for introducing and removing said semiconductor material from said processing chamber; a platen mounted within said processing chamber for receiving said material upon introduction, holding said material during thermal treatment and delivering said material for removal; and a blackbody source having a constant planar energy flux characteristic, said source being positioned in opposition to said platen during said thermal treatment.
Claim 2
Independent Claim
84 words
An apparatus for thermally processing a semiconductor material, comprising: a processing chamber; vacuum generation means for controlling the pressure in said processing chamber; means for introducing and removing said semiconductor material from said processing chamber; a platen mounted within said processing chamber for receiving said material upon introduction, holding said material during thermal treatment and delivering said material for removal; and a blackbody source having a constant planar energy flux characteristic, said source being positioned in opposition to said platen during said thermal treatment.
Claim 3
Dependent Claim
19 words
An apparatus in accordance with claim 1 wherein said semiconductor material comprises a wafer of single crystal semiconductor material.
Claim 4
Dependent Claim
28 words
An apparatus in accordance with claim 2 wherein said blackbody source is positioned less than one-half inch from said platen in essentially parallel planar alignment during thermal treatment.
Claim 5
Dependent Claim
27 words
An apparatus in accordance with claim 2 wherein said blackbody source has an effective area of constant planar emission larger than the area of said semiconductor wafer.
Claim 6
Dependent Claim
22 words
An apparatus in accordance with claim 4 wherein said platen includes active cooling means to cool the main body of said platen.
Claim 7
Dependent Claim
24 words
An apparatus in accordance with claim 4 wherein said platen has at least one thermal shield positioned between said wafer and said main body.
Claim 8
Dependent Claim
32 words
An apparatus in accordance with claim 6 wherein the outside shield of said at least one thermal shield has a concave-like shape so that said wafer is contacted only around its periphery.
Claim 9
Dependent Claim
27 words
An apparatus in accordance with claim 7 in combination with refractory metal spring stops to receive and stop said wafer as it is inserted into said platen.