US4356384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and means for heat treating semiconductor material using high intensity CW lamps
Assignee: Individual
•
Filing: 1981-03-02
•
Granted: 1982-10-26
•
Expires: 2001-03-02
Abstract
Abstract Apparatus for annealing semiconductor wafers includes a support for receiving the wafers and resistive heaters for heating the wafers by thermal conduction through the support or by convection. A high intensity arc lamp scans the heated wafers thereby raising the temperature sufficiently for heat treating. The process is simple, rapid, efficient, and does not create damaging thermal stresses in the wafers. The high temperature and short time treatment enables material properties unobtainable with conventional thermal processes.
Inventors
- 👤 Arnon Gat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:10
CPC Classifications
C; C30; C30B; C30B33/00; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10P72/0432; H10P72/0434; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
68 words
Apparatus for heat treating a semiconductor wafer comprising a heated support for holding and heating a semiconductor wafer, a high intensity incoherent CW light source positionable with respect to said support for radiation heating of a wafer held on said support, and means for effecting relative motion between said light source and said support whereby the entire surface of a wafer can be scanned by said light source.
Claim 2
Dependent Claim
68 words
Apparatus for heat treating a semiconductor wafer comprising a heated support for holding and heating a semiconductor wafer, a high intensity incoherent CW light source positionable with respect to said support for radiation heating of a wafer held on said support, and means for effecting relative motion between said light source and said support whereby the entire surface of a wafer can be scanned by said light source.
Claim 3
Dependent Claim
32 words
Apparatus as defined by claim 1 wherein said heated support includes a chuck for securely holding a semiconductor wafer and heater means for heating said wafer by thermal conduction through said support.
Claim 4
Dependent Claim
13 words
Apparatus as defined by claim 2 wherein said chuck comprises a vacuum chuck.
Claim 5
Dependent Claim
28 words
Apparatus as defined by claim 1 wherein said heated support includes means for positioning a wafer in spaced relationship with respect to a top surface of said support.
Claim 6
Dependent Claim
29 words
Apparatus as defined by claim 2 or 4 wherein said heater means comprises a plurality of resistor heaters embedded in said support and in thermal contact with said chuck.
Claim 7
Dependent Claim
20 words
Apparatus as defined by claim 1 wherein said means for effecting relative motion comprises means for moving said light source.
Claim 8
Dependent Claim
39 words
Apparatus as defined by claim 6 wherein said means for moving said light source comprises at least one rail member on which said light source is slidably mounted and means for moving said light source on said rail member.
Claim 9
Dependent Claim
29 words
Apparatus as defined in claim 1 and including means for varying spacing between said light source and said support including means for varying the height of said heated support.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-25 | 1986-04-26 | 1986-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-25 | 1990-04-26 | 1990-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-25 | 1994-04-26 | 1994-10-26 | $7700.00 | Window Closed / Lapsed |