Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable the formation of the shallow N type diffused junction layer of a low sheet resistance at low cost by forming an SOPSG on a surface of silicide followed by a heat treatment using a halogen lamp. CONSTITUTION:On a silicon substrate 1, a gate oxide film 8, a polycrystalline silicon gate electrode 10 and a side wall insulating film SiO2 9 are formed. After forming a high-melting point metal or a high-melting point metal layer 11 on the gate electrode and the source and drain selectively, the substrate is coated with an SOPSG12 by a spin coater and the coated substrate is baked and is subjected to a high-temp. and short-time heat treatment by use of a halogen lamp to form a MOS.FET having a shallow N type diffusion layer 13. In this case, the shallow junction reduces a junction capacity and makes switching of the MOS.FET faster and at the same time, it enables miniaturization of the MOS.FET.

Inventors

• 👤 Juri Kato
• 👤 樹理 加藤

Bibliographic Details