Manufacturing method of MOS type transistor

Abstract

Abstract PURPOSE:To enable to realize a shallow junction and a low resistant source- drain region and thus to reduce failure by forming a source-drain diffused layer by diffusing an impurity from a metallic silicide film. CONSTITUTION:The part on an Si substrate 11 is divided into a field region 13 and an active region 14 by selectively forming a field oxide film 12 on the surface of the Si substrate 11. Next, an Si oxide film is grown on the active region 14 by dry oxidation, and this Si oxide film is removed at the other part than a gate part 15 by leaving only the part by photoetching method. Then, the metallic silicide film 16 serving as a gate electrode and a wiring is formed over the entire surface of the Si substrate 11, and this film is etched by photoetching method, resulting in the formation on the gate electrode 17 and the wiring 18. By ion implantation, the impurity (e.g. As) diffused to the source-drain diffused layer is implanted over the entire surface of the Si substrate 11 so as to remain in the metallic silicide film 16, thereafter heat treatment is performed.

Inventors

• 👤 Hiroyuki Tamura
• 👤 浩之 田村
• 👤 Masayoshi Ino
• 👤 伊野　昌義

Bibliographic Details