US4758529A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming an improved gate dielectric for a MOSFET on an insulating substrate
Assignee: General Electric Co
•
Filing: 1985-10-31
•
Granted: 1988-07-19
•
Expires: 2005-10-31
Abstract
Abstract A method for forming a silicon dioxide layer on a silicon island on an insulating substrate includes the steps of initially providing an insulating substrate having a major surface on which a silicon island is disposed. The surface of the silicon island is then thermally oxidized and a silicon layer is deposited on the oxidized island and the portion of the substrate surface adjacent to the island. This entire silicon layer is then oxidized and a conductive polycrystalline silicon electrode is deposited thereon.
Inventors
- 👤 Alfred C. Ipri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:05
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; Y; Y10; Y10S; Y10S148/00; Y10S148/081; Y10S148/118; Y10S148/15
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
73 words
A method for forming an insulated gate electrode on a silicon island on an insulating substrate, comprising: providing an insulating substrate having a major surface on which a silicon island is disposed; thermally oxidizing the surface of the silicon island; depositing a silicon layer on the oxidized island the portion of the substrate surface adjacent thereto; oxidizing the entire silicon layer; and depositing a conductive polycrystalline silicon electrode on the oxidized silicon layer.
Claim 2
Independent Claim
73 words
A method for forming an insulated gate electrode on a silicon island on an insulating substrate, comprising: providing an insulating substrate having a major surface on which a silicon island is disposed; thermally oxidizing the surface of the silicon island; depositing a silicon layer on the oxidized island the portion of the substrate surface adjacent thereto; oxidizing the entire silicon layer; and depositing a conductive polycrystalline silicon electrode on the oxidized silicon layer.
Claim 3
Dependent Claim
14 words
A method in accordance with claim 1 wherein said silicon layer comprises polycrystalline silicon.
Claim 4
Dependent Claim
15 words
A method in accordance with claim 1 wherein the insulating substrate is an amorphous material.
Claim 5
Dependent Claim
13 words
A method in accordance with claim 3 wherein the insulating substrate is glass.
Claim 6
Dependent Claim
13 words
A method in accordance with claim 4 wherein the silicon island is polycrystalline.
Claim 7
Dependent Claim
15 words
A method in accordance with claim 1 wherein the insulating substrate is a crystalline material.
Claim 8
Dependent Claim
24 words
A method in accordance with claim 6 wherein the insulating substrate is a material selected from the group consisting of sapphire, spinel and berylia.
Claim 9
Dependent Claim
13 words
A method in accordance with claim 7 wherein the silicon island is monocrystalline.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |