Patent US4316593A successfully refreshed from Google Patents.
Patent US6737317B2 successfully refreshed from Google Patents.
US6737317B2
Expired / Lapsed
US
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Method of manufacturing a capacitor having RuSixOy-containing adhesion layers
Assignee: Mosaid Technologies Inc
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Filing: 2002-02-12
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Granted: 2004-05-18
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Expires: 2022-02-12
Abstract
Abstract A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSi x O y , where x and y are in the range of about 0.01 to about 10. The adhesion layer may be formed by depositing RuSi x O y by chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the adhesion layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSi x O y from the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such an adhesion layer. Semiconductor structures and devices can be formed to include adhesion layers formed of RuSi x O y .
Inventors
- 👤 Eugene P. Marsh
- 👤 Brenda D. Kraus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:11
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D1/682
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x Q y adhesion layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 2
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x Q y adhesion layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 3
Dependent Claim
48 words
The method of claim 1 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
Claim 4
Dependent Claim
38 words
The method of claim 1 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is in a range of about 0.01 to about 3.
Claim 5
Dependent Claim
39 words
The method of claim 1 , wherein forming an adhesion layer of RuSi x O y , comprises forming an adhesion layer of RuSi x O y where y is in a range of about 0.01 to about 1.
Claim 6
Dependent Claim
31 words
The method of claim 3 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is about 0.4.
Claim 7
Dependent Claim
31 words
The method of claim 4 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is about 0.05.
Claim 8
Independent Claim
130 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a layer of ruthenium on at least a portion of the silicon-containing region; annealing the layer of ruthenium farmed on the at least a portion of die silicon-containing region to form a RuSi x O y adhesion layer where x and y are in a range of about 0.01 to about 10; forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the one or more conductive layers; and providing an electrode over the high dielectric constant material.
Claim 9
Independent Claim
130 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a layer of ruthenium on at least a portion of the silicon-containing region; annealing the layer of ruthenium farmed on the at least a portion of die silicon-containing region to form a RuSi x O y adhesion layer where x and y are in a range of about 0.01 to about 10; forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the one or more conductive layers; and providing an electrode over the high dielectric constant material.
Claim 10
Dependent Claim
48 words
The method of claim 11 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
Claim 11
Dependent Claim
28 words
The method of claim 7 , wherein the RuSi x O y adhesion layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor.
Claim 12
Dependent Claim
28 words
The method of claim 7 , wherein the RuSi x O y adhesion layer is formed by atomic layer deposition using a ruthenium precursor and a silicon precursor.
Claim 13
Dependent Claim
31 words
The method of claim 10 , wherein forming the RuSi x O y adhesion layer by atomic layer deposition comprises forming three to five monolayers of RuSi x O y .
Claim 14
Dependent Claim
38 words
The method of claim 7 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is in a range of about 0.01 to about 3.
Claim 15
Dependent Claim
38 words
The method of claim 7 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is in a range of about 0.01 to about 1.
Claim 16
Dependent Claim
31 words
The method of claim 16 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is about 0.4.
Claim 17
Dependent Claim
31 words
The method of claim 13 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is about 0.05.
Claim 18
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the fanning of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x O y adhesion layer is formed by atomic layer deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 19
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the fanning of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x O y adhesion layer is formed by atomic layer deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 20
Dependent Claim
48 words
The method of claim 16 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
Claim 21
Dependent Claim
38 words
The method of claim 16 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is in a range of about 0.01 to about 3.
Claim 22
Dependent Claim
37 words
The method of claim 16 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is a range of about 0.01 to about 1.
Claim 23
Dependent Claim
17 words
The method of claim 16 wherein three to five monolayers of RuSi x O y are formed.
Claim 24
Independent Claim
154 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming a layer of ruthenium on the at least a portion of the silicon-containing region; annealing the layer of ruthenium formed on the at least a portion of the silicon-containing region, resulting in a RuSi x O y adhesion layer, where x and y are in a range of about 0.01 to about 10; and forming one or n-ore conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 25
Independent Claim
154 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming a layer of ruthenium on the at least a portion of the silicon-containing region; annealing the layer of ruthenium formed on the at least a portion of the silicon-containing region, resulting in a RuSi x O y adhesion layer, where x and y are in a range of about 0.01 to about 10; and forming one or n-ore conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 26
Dependent Claim
38 words
The method of claim 21 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is in a range of about 0.01 to about 1.
Claim 27
Dependent Claim
48 words
The method of claim 16 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
References Cited (Backward Citations)
US4058430A
Cited
US4250210A
Cited
US4157943A
Cited
US4413022A
Cited
US5130172A
Cited
US5241137A
Cited
US4982309A
Cited
US5122923A
Cited
US5080862A
Cited
US5126016A
Cited
US5525181A
Cited
US5270241A
Cited
US5314727A
Cited
US5372849A
Cited
US5335138A
Cited
US5286675A
Cited
US5352488A
Cited
US5742322A
Cited
US5729054A
Cited
US5618761A
Cited
US5529953A
Cited
US5662815A
Cited
US5614795A
Cited
US5637533A
Cited
US5612574A
Cited
JPH0931042A
Cited
US5874174A
Cited
US5705442A
Cited
US6194753B1
Cited
US5719425A
Cited
US5866460A
Cited
US5994034A
Cited
US5843830A
Cited
US5885750A
Cited
US6320213B1
Cited
US6063705A
Cited
US6133159A
Cited
US5962716A
Cited
US6197628B1
Cited
US6407422B1
Cited
US6429127B1
Cited
US6461909B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-05-18 | 2007-11-17 | 2008-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-05-18 | 2011-11-17 | 2012-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-05-18 | 2015-11-17 | 2016-05-18 | $7700.00 | Window Closed / Lapsed |