US6737317B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a capacitor having RuSixOy-containing adhesion layers
Assignee: Mosaid Technologies Inc
•
Filing: 2002-02-12
•
Granted: 2004-05-18
•
Expires: 2022-02-12
Abstract
Abstract A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSi x O y , where x and y are in the range of about 0.01 to about 10. The adhesion layer may be formed by depositing RuSi x O y by chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the adhesion layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSi x O y from the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such an adhesion layer. Semiconductor structures and devices can be formed to include adhesion layers formed of RuSi x O y .
Inventors
- 👤 Eugene P. Marsh
- 👤 Brenda D. Kraus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:00
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D1/682
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x Q y adhesion layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 2
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x Q y adhesion layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 3
Dependent Claim
48 words
The method of claim 1 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
Claim 4
Dependent Claim
38 words
The method of claim 1 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is in a range of about 0.01 to about 3.
Claim 5
Dependent Claim
39 words
The method of claim 1 , wherein forming an adhesion layer of RuSi x O y , comprises forming an adhesion layer of RuSi x O y where y is in a range of about 0.01 to about 1.
Claim 6
Dependent Claim
31 words
The method of claim 3 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is about 0.4.
Claim 7
Dependent Claim
31 words
The method of claim 4 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is about 0.05.
Claim 8
Independent Claim
130 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a layer of ruthenium on at least a portion of the silicon-containing region; annealing the layer of ruthenium farmed on the at least a portion of die silicon-containing region to form a RuSi x O y adhesion layer where x and y are in a range of about 0.01 to about 10; forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the one or more conductive layers; and providing an electrode over the high dielectric constant material.
Claim 9
Independent Claim
130 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a layer of ruthenium on at least a portion of the silicon-containing region; annealing the layer of ruthenium farmed on the at least a portion of die silicon-containing region to form a RuSi x O y adhesion layer where x and y are in a range of about 0.01 to about 10; forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the one or more conductive layers; and providing an electrode over the high dielectric constant material.
Claim 10
Dependent Claim
48 words
The method of claim 11 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
Claim 11
Dependent Claim
28 words
The method of claim 7 , wherein the RuSi x O y adhesion layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor.
Claim 12
Dependent Claim
28 words
The method of claim 7 , wherein the RuSi x O y adhesion layer is formed by atomic layer deposition using a ruthenium precursor and a silicon precursor.
Claim 13
Dependent Claim
31 words
The method of claim 10 , wherein forming the RuSi x O y adhesion layer by atomic layer deposition comprises forming three to five monolayers of RuSi x O y .
Claim 14
Dependent Claim
38 words
The method of claim 7 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is in a range of about 0.01 to about 3.
Claim 15
Dependent Claim
38 words
The method of claim 7 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is in a range of about 0.01 to about 1.
Claim 16
Dependent Claim
31 words
The method of claim 16 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is about 0.4.
Claim 17
Dependent Claim
31 words
The method of claim 13 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is about 0.05.
Claim 18
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the fanning of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x O y adhesion layer is formed by atomic layer deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 19
Independent Claim
147 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the fanning of the first electrode comprising: forming an adhesion layer of RuSi x O y , wherein the RuSi x O y adhesion layer is formed by atomic layer deposition using a ruthenium precursor and a silicon precursor and where x and y are in a range of about 0.01 to about 10; and forming one or more conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 20
Dependent Claim
48 words
The method of claim 16 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
Claim 21
Dependent Claim
38 words
The method of claim 16 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where x is in a range of about 0.01 to about 3.
Claim 22
Dependent Claim
37 words
The method of claim 16 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is a range of about 0.01 to about 1.
Claim 23
Dependent Claim
17 words
The method of claim 16 wherein three to five monolayers of RuSi x O y are formed.
Claim 24
Independent Claim
154 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming a layer of ruthenium on the at least a portion of the silicon-containing region; annealing the layer of ruthenium formed on the at least a portion of the silicon-containing region, resulting in a RuSi x O y adhesion layer, where x and y are in a range of about 0.01 to about 10; and forming one or n-ore conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 25
Independent Claim
154 words
A method for forming a capacitor comprising: providing a silicon-containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon-containing region of the substrate assembly, the forming of the first electrode comprising: forming a layer of ruthenium on the at least a portion of the silicon-containing region; annealing the layer of ruthenium formed on the at least a portion of the silicon-containing region, resulting in a RuSi x O y adhesion layer, where x and y are in a range of about 0.01 to about 10; and forming one or n-ore conductive layers relative to the RuSi x O y adhesion layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric constant material over at least a portion of the first electrode; and providing a second electrode over the high dielectric constant material.
Claim 26
Dependent Claim
38 words
The method of claim 21 , wherein forming an adhesion layer of RuSi x O y comprises forming an adhesion layer of RuSi x O y where y is in a range of about 0.01 to about 1.
Claim 27
Dependent Claim
48 words
The method of claim 16 , wherein the one or more conductive layers are formed from materials selected from a group consisting of RuO 2 , RhO 2 , MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, Ir, W, WN, TaN, Os and OsO 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-05-18 | 2007-11-17 | 2008-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-05-18 | 2011-11-17 | 2012-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-05-18 | 2015-11-17 | 2016-05-18 | $7700.00 | Window Closed / Lapsed |