Patent US6472076B1 successfully refreshed from Google Patents.
US6472076B1
Expired / Lapsed
US
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Deposition of organosilsesquioxane films
Assignee: Honeywell International Inc
•
Filing: 1999-10-18
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Granted: 2002-10-29
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Expires: 2019-10-18
Abstract
Abstract There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R-SiO1.5]x[H-SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.
Inventors
- 👤 Nigel P. Hacker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:43
CPC Classifications
C; C09; C09D; C09D183/00; C09D183/04; C09D183/08; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C07; C07F; C07F7/00; C07F7/02; C07F7/21; Y; Y10; Y10T; Y10T428/00; Y10T428/249921; Y10T428/249953; Y10T428/249987; Y10T428/24999; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
87 words
A low k dielectric film comprising a material having the formula [H a SiO b ] c [(R 1 ) a SiO b ] d [(R 2 ) a SiO b ] n , wherein R 1 and R 2 are members independently selected from C 1 to C 100 alkyl groups; a is less than or equal to 1; b is greater than or equal to 1.5; and c, d and n are members independently selected from the group consisting of the integers greater than 10.
Claim 2
Dependent Claim
87 words
A low k dielectric film comprising a material having the formula [H a SiO b ] c [(R 1 ) a SiO b ] d [(R 2 ) a SiO b ] n , wherein R 1 and R 2 are members independently selected from C 1 to C 100 alkyl groups; a is less than or equal to 1; b is greater than or equal to 1.5; and c, d and n are members independently selected from the group consisting of the integers greater than 10.
Claim 3
Dependent Claim
27 words
The method according to claim 1 , wherein R 1 and R 2 are independently selected from C 1 to C 20 straight- or branched-chain alkyl group.
Claim 4
Dependent Claim
26 words
The method according to claim 2 , wherein R 1 and R 2 are independently selected from C 1 to C 16 straight-or branched-chain alkyl groups.
Claim 5
Dependent Claim
26 words
The method according to claim 3 , wherein R 1 and R 2 are independently selected from C 1 to C 6 straight-or branched-chain alkyl groups.
Claim 6
Dependent Claim
17 words
The method according to claim 4 , wherein R 1 and R 2 are both methyl groups.
Claim 7
Dependent Claim
14 words
The film according to claim 1 , wherein said film is a porous film.
Claim 8
Dependent Claim
21 words
The film according to claim 1 , wherein said film has a dielectric constant of from about 2 to about 3.
Claim 9
Independent Claim
188 words
A method for preparing a porous low k dielectric film having a preselected degree of porosity, said film comprising a material having the formula [H a SiO b ] c [(R 1 ) a SiO b ] d [(R 2 ) a SiO b ] n , wherein R 1 and R 2 are members independently selected from C 1 to C 100 alkyl groups; a is less than or equal to 1; b is greater than or equal to 1.5; and c, d and n are members independently selected from the group consisting of the integers greater than 10, said method comprising: (a) depositing a film precursor to form a deposited film precursor, said film precursor comprising a material having the formula [R—SiO 1.5 ] x [H—SiO 1.5] y , wherein x+y=n; n is an integer between 2 and 30; x is an integer between 1 and n; y is a whole number between 0 and n; R is a C 1 to C 100 alkyl group; and (b) curing said deposited film precursor to form a low k dielectric film with a preselected degree of porosity.
Claim 10
Independent Claim
188 words
A method for preparing a porous low k dielectric film having a preselected degree of porosity, said film comprising a material having the formula [H a SiO b ] c [(R 1 ) a SiO b ] d [(R 2 ) a SiO b ] n , wherein R 1 and R 2 are members independently selected from C 1 to C 100 alkyl groups; a is less than or equal to 1; b is greater than or equal to 1.5; and c, d and n are members independently selected from the group consisting of the integers greater than 10, said method comprising: (a) depositing a film precursor to form a deposited film precursor, said film precursor comprising a material having the formula [R—SiO 1.5 ] x [H—SiO 1.5] y , wherein x+y=n; n is an integer between 2 and 30; x is an integer between 1 and n; y is a whole number between 0 and n; R is a C 1 to C 100 alkyl group; and (b) curing said deposited film precursor to form a low k dielectric film with a preselected degree of porosity.
Claim 11
Dependent Claim
27 words
The method according to claim 8 , wherein said curing is carried out using a method selected from the group of heat, ultraviolet light and combinations thereof.
Claim 12
Dependent Claim
27 words
The method according to claim 9 , wherein said curing is carried out by heating to a temperature of from about 150° C. to about 700° C.
Claim 13
Dependent Claim
19 words
The method according to claim 10 , wherein said temperature is from about 200° C. to about 500° C.
Claim 14
Dependent Claim
24 words
The film according to claim 8 , wherein said low k dielectric film has a dielectric constant of from about 2 to about 3.
Claim 15
Dependent Claim
92 words
An object comprising a low k dielectric film, said film comprising a material having the formula: [H a SiO b ] c [(R 1 ) a SiO b ] d [(R 2 ) a SiO b ] n , wherein R 1 and R 2 are members independently selected from C 1 to C 100 alkyl groups; a is less than or equal to 1; b is greater than or equal to 1.5; and c, d and n are members independently selected from the group consisting of the integers greater than 10.
Claim 16
Dependent Claim
92 words
An object comprising a low k dielectric film, said film comprising a material having the formula: [H a SiO b ] c [(R 1 ) a SiO b ] d [(R 2 ) a SiO b ] n , wherein R 1 and R 2 are members independently selected from C 1 to C 100 alkyl groups; a is less than or equal to 1; b is greater than or equal to 1.5; and c, d and n are members independently selected from the group consisting of the integers greater than 10.
Claim 17
Dependent Claim
13 words
The object according to claim 13 , wherein said object comprises a wafer.
Claim 18
Dependent Claim
27 words
The wafer according to claim 14 , wherein said wafer comprises a member selected from Si, SiON, SiN, SiO 2 , Cu, Ta, TaN and combinations thereof.
Claim 19
Dependent Claim
23 words
The wafer according to claim 14 , wherein said wafer is a member selected from Si wafers, SiO 2 wafers and combinations thereof.
Claim 20
Dependent Claim
12 words
The wafer according to claim 16 , wherein said wafer is metallized.
Claim 21
Dependent Claim
21 words
The metallized wafer according to claim 17 , metallized with a member selected from copper, titanium, titanium nitride and combinations thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-10-28 | 2006-04-29 | 2006-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-28 | 2010-04-29 | 2010-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-10-28 | 2014-04-29 | 2014-10-29 | $7700.00 | Window Closed / Lapsed |