US5370904A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the formation of silicon oxide films
Assignee: Dow Silicones Corp
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Filing: 1993-10-29
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Granted: 1994-12-06
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Expires: 2013-10-29
Abstract
Abstract Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250° C. to 500° C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane.
Inventors
- 👤 Katsutoshi Mine
- 👤 Takashi Nakamura
- 👤 Motoshi Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:13
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/25; C03C17/28; C03C17/30; C04B41/009; C04B41/45; C04B41/50; C04B41/5025; C04B41/5035; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1212; C23C18/122; C23C18/125; C23C18/1275; C23C18/1279; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2218/00; C03C2218/10; C03C2218/11; C03C2218/30; C03C2218/32; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69215
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
79 words
A method for the formation of a silicon oxide film comprising: forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250° C. up to, but not including, 500° C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 2
Independent Claim
79 words
A method for the formation of a silicon oxide film comprising: forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250° C. up to, but not including, 500° C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 3
Dependent Claim
50 words
The method of claim 1 wherein the hydrogen silsesquioxane resin film was formed on the surface of the substrate by preparing an organic solvent solution of the hydrogen silsesquioxane resin, applying this solution by a method selected from the group consisting of spin-coating, spraying, and immersion, and removing the solvent.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein the solvent is selected from the group consisting of aromatic solvents, aliphatic solvents, ketone solvents, ester solvents, and silicone solvents.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein the substrate is selected from the group consisting of glass substrates, ceramic substrates, metal substrates, and semiconductor devices.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein the inert gas is selected from the group consisting of nitrogen, argon, helium, and neon.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein the resin-film bearing substrate is heated at a temperature of 300° C. for about 3 hours.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein the resin-film bearing substrate is heated at a temperature of 250° C. for about 4 hours.
Claim 9
Dependent Claim
27 words
The method of claim 1 wherein the resin-film bearing substrate is heated at a temperature between 250° C. and 450° C. for between 1 and 4 hours.
Claim 10
Dependent Claim
22 words
The method of claim 1 wherein the resin-film bearing substrate is heated at a temperature of 450° C. for about 1 hour.
Claim 11
Dependent Claim
22 words
The method of claim 1 wherein the resin-film bearing substrate is heated at a temperature of 400° C. for about 2 hours.
Claim 12
Dependent Claim
22 words
The method of claim 1 wherein the resin-film bearing substrate is heated at a temperature of 350° C. for about 3 hours.
Claim 13
Independent Claim
90 words
A method for the formation of a silicon oxide film, wherein the method is characterized by the formation of a hydrogen silsesquioxane resin film on the surface of a semiconductor device and subsequent conversion of the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in an inert gas atmosphere at 250° C. up to, but not including, 500° C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 14
Independent Claim
90 words
A method for the formation of a silicon oxide film, wherein the method is characterized by the formation of a hydrogen silsesquioxane resin film on the surface of a semiconductor device and subsequent conversion of the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in an inert gas atmosphere at 250° C. up to, but not including, 500° C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 15
Independent Claim
98 words
A method for the formation of a silicon oxide film wherein the method is characterized by the planarization of the topographical variations on the surface of a semiconductor device by the formation thereon of a hydrogen silsesquioxane resin film, and subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in all inert gas atmosphere at 250° C. up to, but not including, 500° C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
Claim 16
Independent Claim
98 words
A method for the formation of a silicon oxide film wherein the method is characterized by the planarization of the topographical variations on the surface of a semiconductor device by the formation thereon of a hydrogen silsesquioxane resin film, and subsequent conversion of said hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing semiconductor device in all inert gas atmosphere at 250° C. up to, but not including, 500° C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |