EP0386969A2
Expired / Lapsed
EP
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Method for protective coating superconductors
Assignee: Dow Silicones Corp
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Filing: 1990-03-05
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Granted: —
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Expires: 2010-03-05
Abstract
Abstract This invention relates to protective coatings for copper oxide superconductors. The coatings are formed by applying solutions of silica precursors to the superconductor and after solvent evaporation, heating in an oxygen-containing atmosphere to effect conversion of the precursor to a continuous silica coating. Precursor materials, such as hydrogen silsesquioxide, ethyl polysilicate and C-resin are described.
Inventors
- 👤 Ronald Howard Baney
- 👤 Debora Frances Bergstrom
- 👤 Leslie Earl Carpenter
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 05:55
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0128; C04B41/45; C04B41/50; C04B41/5025; C04B41/5035; C04B41/80; C04B41/81; C04B41/85; C04B41/87; H10N60/0268; H10N60/0661; H10N60/0716; H10N60/80; H10N60/85; H10N60/851; H10N60/855
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
78 words
A method for protecting cuprate superconductors comprising: coating the superconductor material with an organic solution of a continuous film forming silica precursor, the organic solvent for said solution being one which will volatilize at temperatures below 400°C. and below any temperature at which the solvent would significantly react with the cuprate superconductor; evaporating said solvent off of said coated superconductor; and pyrolyzing said coating to silica in an atmosphere containing oxygen at elevated temperatures, but below about 400°C.
Claim 2
Independent Claim
78 words
A method for protecting cuprate superconductors comprising: coating the superconductor material with an organic solution of a continuous film forming silica precursor, the organic solvent for said solution being one which will volatilize at temperatures below 400°C. and below any temperature at which the solvent would significantly react with the cuprate superconductor; evaporating said solvent off of said coated superconductor; and pyrolyzing said coating to silica in an atmosphere containing oxygen at elevated temperatures, but below about 400°C.
Claim 3
Dependent Claim
16 words
The method of claim 1 in which said continuous film forming silica precursor comprises tetraethyl orthosilicate.
Claim 4
Dependent Claim
17 words
The method of claim 2 in which said continuous film forming silica precursor also includes colloidal silica.
Claim 5
Dependent Claim
16 words
The method of claim 1 in which said continuous film forming silica precursor comprises ethyl polysilicate.
Claim 6
Dependent Claim
17 words
The method of claim 4 in which said continuous film forming silica precursor also includes colloidal silica.
Claim 7
Dependent Claim
73 words
The method of claim 1 in which said continuous film forming silica precursor comprises a silsesquioxane having the general formula: (RSiO 3/2 ) n , where R comprises hydrogen, a hydroxy group, a low carbon alkyl, alkenyl or alkoxy group, where R can be a different one of the foregoing at different points along the length of the polymer chain and where n is within the range of about 5 to about 100.
Claim 8
Dependent Claim
17 words
The method of claim 6 in which said continuous film forming silica precursor also includes colloidal silica.
Claim 9
Dependent Claim
13 words
The method of claim 1 in which said silica precursor comprises hydrido silsesquioxane.
Claim 10
Dependent Claim
12 words
The method of claim 1 in which said silica precursor comprises methylsilsesquioxane.
Claim 11
Dependent Claim
15 words
The method of claim 1 in which said silica precursor comprises ethoxymethylpolysiloxane and colloidal silica.
References Cited (Backward Citations)
No citation records indexed.
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