US4670299A
Expired / Lapsed
US
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Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
Assignee: Fujitsu Ltd
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Filing: 1985-10-23
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Granted: 1987-06-02
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Expires: 2005-10-23
Abstract
Abstract A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH 3 or C 2 H 5 , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20° C. to -50° C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20° C. to -50° C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60° C. to 100° C. under an inert gas pressurized at 1,000 to 3,000 Pa. Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
Inventors
- 👤 Shun-ichi Fukuyama
- 👤 Yasuhiro Yoneda
- 👤 Masashi Miyagawa
- 👤 Kota Nishii
- 👤 Azuma Matsuura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:59
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6926; C; C08; C08G; C08G77/00; C08G77/04; C08G77/06; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/46; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W99/00; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4673; H05K3/4676; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10S428/901; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663; Y10T428/31678
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
132 words
A process for preparing a lower alkyl polysilsesquioxane having a general formula ##STR8## wherein R is CH 3 or C 2 H 5 and n is an integer equal to about 50 to about 10,000, comprising the steps of: (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20° C. to -50° C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20° C. to -50° C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60° C. to 100° C. under an inert gas pressurized at 1,000 to 3,000 Pa.
Claim 2
Dependent Claim
132 words
A process for preparing a lower alkyl polysilsesquioxane having a general formula ##STR8## wherein R is CH 3 or C 2 H 5 and n is an integer equal to about 50 to about 10,000, comprising the steps of: (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20° C. to -50° C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20° C. to -50° C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60° C. to 100° C. under an inert gas pressurized at 1,000 to 3,000 Pa.
Claim 3
Dependent Claim
29 words
A process according to claim 1, wherein the lower alkyl polysilsesquioxane is methyl polysilsesquioxane, the weight average molecular weight of which ia approximately 6.7×10 3 to 1.34×10 6 .
Claim 4
Dependent Claim
29 words
A process according to claim 1, wherein the lower alkyl polysilsesquioxane is ethyl polysilsesquioxane, the weight average molecular weight of which is approximately 8.2×10 3 to 1.62×10 6 .
Claim 5
Dependent Claim
85 words
A process for forming an insulating layer having a flat surface, comprising the steps of: (a) applying an organic solution of a silylated lower alkyl polysilsesquioxane having a general formula ##STR9## wherein R is CH 3 or C 2 H 5 , and n is an integer from 50 to 2,000, on a circuit board having stepwise differences in height thereon; (b) evaporating the solvent; (c) melting the silylated lower alkyl polysilsesquioxane, thereby forming a flat surface of the polymer; and (d) curing the polymer.
Claim 6
Dependent Claim
85 words
A process for forming an insulating layer having a flat surface, comprising the steps of: (a) applying an organic solution of a silylated lower alkyl polysilsesquioxane having a general formula ##STR9## wherein R is CH 3 or C 2 H 5 , and n is an integer from 50 to 2,000, on a circuit board having stepwise differences in height thereon; (b) evaporating the solvent; (c) melting the silylated lower alkyl polysilsesquioxane, thereby forming a flat surface of the polymer; and (d) curing the polymer.
Claim 7
Dependent Claim
34 words
A process according to claim 4, wherein the silylated lower alkyl polysilsesquioxane is methyl polysilsesquioxane having trimethyl silylated end groups, and having an average molecular weight of approximately 7.0×10 3 to 7.7×10 5 .
Claim 8
Dependent Claim
34 words
A process according to claim 4, wherein the silylated lower alkyl polysilsesquioxane is ethyl polysilsesquioxane having triethyl silylated end groups, and having an average molecular weight of approximately 8.4×10 3 to 3.2×10 5 .
Claim 9
Dependent Claim
14 words
A process according to claim 4, wherein the insulating layer is a passivation film.
Claim 10
Dependent Claim
31 words
A process according to claim 4, wherein the insulating layer is a layer insulating layer, having an insulating layer of an inorganic material thereon, thereby forming a double layered insulating layer.
Claim 11
Dependent Claim
80 words
A process for forming an insulating layer having a flat surface, comprising the steps of: (a) applying an organic solution of a silylated organopolysilsesquioxane having a general formula ##STR10## wherein R is an alkyl or phenyl group, and n is an integer equal to approximately 50 to 2,000, on a circuit board having stepwise differences in height thereon; (b) evaporating the solvent; (c) melting the silylated organopolysilsesquioxane, thereby forming a flat surface of the polymer; and (d) curing the polymer.
Claim 12
Dependent Claim
80 words
A process for forming an insulating layer having a flat surface, comprising the steps of: (a) applying an organic solution of a silylated organopolysilsesquioxane having a general formula ##STR10## wherein R is an alkyl or phenyl group, and n is an integer equal to approximately 50 to 2,000, on a circuit board having stepwise differences in height thereon; (b) evaporating the solvent; (c) melting the silylated organopolysilsesquioxane, thereby forming a flat surface of the polymer; and (d) curing the polymer.
Claim 13
Dependent Claim
19 words
A process according to claim 4, wherein in said step (a) n is an integer between 50 and 500.
Claim 14
Dependent Claim
25 words
A process according to claim 5, wherein the silylated lower alkyl polysilsesquioxane has an average molecular weight of approximately 7.0×10 3 to 6.7×10 4 .
Claim 15
Dependent Claim
25 words
A process according to claim 6, wherein the silylated lower alkyl polysilsesquioxane has an average molecular weight of approximately 8.4×10 3 to 8.1×10 4 .
Claim 16
Dependent Claim
19 words
A processing according to claim 9, wherein in said step (a) n is an integer between 50 and 500.
References Cited (Backward Citations)
US4349609A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-06-01 | 1990-12-01 | 1991-06-02 | $2000.00 | Window Closed / Lapsed |
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