Electronic device having multilayer wiring structure

Claim 2

An electronic device having a multilayer wiring structure comprising: a substrate having formed thereon a first metal wiring layer, and; an interlayer insulation layer comprised of a cured coating of a ladder-type silsesquioxane polymer, formed on the substrate and on said first metal wiring layer and having formed thereon a second metal wiring layer.

Claim 3

An electronic device having a structure of multiple wiring layers comprising: a layer for protecting each metal wiring layer formed in the multiple layer wiring structure; said protecting layer being comprised of a cured coating of a ladder-type silsesquioxane polymer.

Claim 4

An electronic device having a structure of multiple wiring layers comprising: a layer for protecting each metal wiring layer formed in the multiple layer wiring structure; said protecting layer being comprised of a cured coating of a ladder-type silsesquioxane polymer.

Claim 5

The electronic device according to claim 1 or 2, wherein the ladder-type silsesquioxane polymer has a chemical structure represented by the formula: ##STR5## wherein each R 2 is independently hydrogen, methyl, ethyl or propyl, each R 1 is independently methyl, ethyl, phenyl, chlorophenyl or bromophenyl, and part of the R 1 groups may be replaced by hydroxyl, methoxy or ethoxy, and n is an integer sufficient to provide a molecular weight of from about 1,000 to about 1,000,000.

Claim 6

The electronic device according to claim 3, wherein at least one half of the side chains R 1 are methyl groups and the remainder of the side chains R 1 are selected from ethyl, phenyl, chlorophenyl, hydroxyl, methoxy and ethoxy groups.

Claim 7

The electronic device according to claim 3, wherein all of the side chains R 1 are methyl groups, or at least one half of the side chains R 1 are methyl groups and the remainder of the side chains R 1 are phenyl groups.

Claim 8

The electronic device according to claim 3, wherein n in the formula (I) is an integer sufficient to provide a molecular weight of from about 1,500 to about 200,000.

Claim 9

The electronic device according to claim 1 or 2, wherein said interlayer insulation layer or protecting layer comprises a cured coating of a mixture comprising at least 30% by weight of the ladder-type silsesquioxane polymer and not larger than 70% by weight of at least one compound selected from the group consisting of: (i) silanol compounds represented by the following formula (II) or (IV): ##STR6## wherein each R 3 is independently hydrogen or an alkyl group having 1 to 3 carbon atoms and R 5 is an organic residue; and (ii) titanol compounds represented by the following formula: ##STR7## wherein each R 4 is independently an alkyl group having 3 to 6 carbon atoms.

Claim 10

The electronic device according to claim 7, wherein said mixture comprises 40 to 70% by weight of the ladder-type silsesquioxane polymer and 30% to 60% by weight of said compound selected from silanol compounds of the formula (II) or (IV) and titanol compounds of the formula (III).

Claim 11

The electronic device according to claim 1 or 2, wherein said interlayer insulation layer or protecting layer is a cured coating of a copolymer comprised of at least 30% by weight of units derived from the ladder-type silsesquioxane polymer and not larger than 70% by weight of units drived from at least one compound selected from the group consisting of: (i) silanol compounds represented by the following formula (II) or (IV): ##STR8## wherein each R 3 is independently hydrogen or an alkyl group having 1 to 3 carbon atoms and R 5 is an organic residue; and (ii) titanol compounds represented by the following formula: ##STR9## wherein each R 4 is independently an alkyl group having 3 to 6 carbon atoms.

Claim 12

The electronic device according to claim 9, wherein said copolymer is comprised of at least 80% by weight of the ladder-type silsesquioxane polymer units and not larger than 20% by weight of the silanol or titanol compound units.

Claim 13

The electronic device according to claim 1 or 2, wherein said interlayer insulation layer or protecting layer is a cured coating of a copolymer mixture comprising: (i) a copolymer comprised of at least 80% by weight of units derived from the ladder-type silsesquioxane polymer and not larger than 20% by weight of units derived from at least one compound selected from the group consisting of: (a) silanol compounds represented by the following formula (II) or (IV): ##STR10## wherein each R 3 is independently hydrogen or an alkyl group having 1 to 3 carbon atoms and R 5 is an organic residue; and (b) titanol compounds represented by the following formula: ##STR11## wherein each R 4 is independently an alkyl group having 3 to 6 carbon atoms; and, (ii) at least one compound of the silanol and titanol compounds of the formulae (II), (IV) and (III), the amount of the compound (ii) selected from the silanol and titanol compounds being such that the total amount of the compound (ii) to be mixed with the copolymer (i) and the silanol or titanol compound contained in the copolymer (i) is not larger than 70% by weight based on the weight of the copolymer mixture.

Claim 14

The electronic device according to claim 7, wherein R 5 in the formula (IV) is an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms or a substituted or unsubstituted phenyl group.

Claim 15

The electronic device according to claim 7, wherein said electronic device is a semiconductor device and said interlayer insulation layer contains 100 to 50,000 ppm of phosphorus.

Claim 16

An electronic device according to claim 1 wherein the electronic device is a semiconductor device, and wherein: said substrate has built-in circuit elements thereon, predetermined portions of said circuit elements being exposed, said first metal wiring layer being formed in a predetermined pattern on said substrate on the surface thereof having said built-in circuit elements and selectively contacting said predetermined, exposed portions thereof; said interlayer insulation layer having at least one window therein aligned with a predetermined, corresponding portion of said first metal wiring layer, and said second metal wiring layer being formed in a predetermined pattern formed on said interlayer insulation layer and extending through said at least one window into electrical contact with said corresponding, predetermined portion of said first metal wiring layer.

Claim 17

The electronic device according to claim 1 wherein: at least one of the first and second metal wiring layers comprises a magnetic material, and there is further provided a further layer formed between the magnetic material metal wiring layer and said interlayer insulation layer, said further layer being formed of a material selected from the group consisting of: (i) at least one inorganic oxide selected from the group consisting of SiO 2 , Al 2 O 3 , Cr 2 O 3 , and TiO 2 , and (ii) at least one inorganic oxide selected from the group consisting of SiO 2 , Al 2 O 3 , Cr 2 O 3 , and TiO 2 and an additional layer of a material selected from the group consisting of tantalum or titanium.

Claim 18

The electronic device according to claim 1 comprising a magnetic bubble device, and wherein: said first metal wiring layer is formed on said substrate in a predetermined pattern, and said second metal wiring layer comprises a permalloy layer formed in a predetermined pattern on said interlayer insulation layer.

Claim 19

The electronic device according to claim 1, wherein said electronic device comprises a magnetic head and wherein each of said first and second metal wiring layers comprises a soft magnetic material, said soft magnetic material of said layers being patterned to define a conductor coil, and a plurality of insulation layers, at least one of said insulation layers comprising a cured coating of a ladder-type silsesquioxane polymer.

Claim 20

The electronic device according to any of claims 1, 14, 16, or 17, further comprising: an adhesion layer comprised of at least one oxide selected from the group consisting of SiO 2 , Al 2 O 3 , Cr 2 O 3 , and TiO 2 between said interlayer insulation layer comprised of the cured ladder-type silsesquioxane polymer and said second metal layer.

Claim 21

The electronic device according to claim 1 further comprising: a layer of an inorganic oxide formed in proximate and contiguous relationship to at least one of said first and second metal wiring layers by vapor phase growth deposition and forming wedge-shaped gaps between contiguous edges of said inorganic oxide layer and said metal wiring layer, and said ladder-type silsesquioxane polymer material of said interlayer insulation layer filling said gaps.

Claim 22

The electronic device according to claims 1 or 2, further comprising: a layer of inorganic oxide material selected from the group consisting of SiO 2 , Al 2 O 3 , Cr 2 O 3 and TiO 2 formed as the uppermost layer of the multiple wiring structure.