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US6417537B1
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Metal oxynitride capacitor barrier layer
Assignee: Round Rock Research LLC
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Filing: 2000-01-18
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Granted: 2002-07-09
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Expires: 2020-01-18
Abstract
Abstract Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
Inventors
- 👤 Sam Yang
- 👤 Vishnu K. Agarwal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:48
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/692; H10D1/696
Claims Analysis
Total Claims: 74
Claim 1
Independent Claim
139 words
A capacitor, comprising: a bottom electrode; a top electrode; a dielectric layer interposed between the bottom electrode and the top electrode; and at least one metal oxynitride barrier layer, wherein the at least one metal oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the at least one metal oxynitride barrier layer is interposed between the dielectric layer and the top electrode; and wherein the at least one metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 2
Dependent Claim
139 words
A capacitor, comprising: a bottom electrode; a top electrode; a dielectric layer interposed between the bottom electrode and the top electrode; and at least one metal oxynitride barrier layer, wherein the at least one metal oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the at least one metal oxynitride barrier layer is interposed between the dielectric layer and the top electrode; and wherein the at least one metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 3
Dependent Claim
122 words
A capacitor, comprising: a bottom electrode; a top electrode; a dielectric layer interposed between the bottom electrode and the top electrode; and at least one tungsten oxynitride barrier layer, wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; and wherein the at least one tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of W minus 0.1.
Claim 4
Dependent Claim
122 words
A capacitor, comprising: a bottom electrode; a top electrode; a dielectric layer interposed between the bottom electrode and the top electrode; and at least one tungsten oxynitride barrier layer, wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; and wherein the at least one tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of W minus 0.1.
Claim 5
Dependent Claim
123 words
A capacitor, comprising: a bottom electrode; a top electrode; a dielectric layer interposed between the bottom electrode and the top electrode; a tungsten oxynitride barrier layer, wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; wherein the bottom electrode or the top electrode comprises tungsten nitride; and wherein the tungsten oxynitride barrier layer h as a composition o f the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of W minus 0.1.
Claim 6
Dependent Claim
123 words
A capacitor, comprising: a bottom electrode; a top electrode; a dielectric layer interposed between the bottom electrode and the top electrode; a tungsten oxynitride barrier layer, wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; wherein the bottom electrode or the top electrode comprises tungsten nitride; and wherein the tungsten oxynitride barrier layer h as a composition o f the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of W minus 0.1.
Claim 7
Dependent Claim
130 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; and a metal oxynitride barrier layer, wherein the metal oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the metal oxynitride barrier layer is interposed between the dielectric layer and the top electrode; and wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 8
Dependent Claim
130 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; and a metal oxynitride barrier layer, wherein the metal oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the metal oxynitride barrier layer is interposed between the dielectric layer and the top electrode; and wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 9
Dependent Claim
55 words
The capacitor of claim 4 , wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium.
Claim 10
Dependent Claim
147 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one metal oxynitride barrier layer, wherein each metal oxynitride barrier layer is interposed between the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode; wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 11
Dependent Claim
147 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one metal oxynitride barrier layer, wherein each metal oxynitride barrier layer is interposed between the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode; wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 12
Dependent Claim
144 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one metal oxynitride barrier layer, wherein each metal oxynitride barrier layer is interposed between the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode; wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein M is a metal component selected from the group consisting of chromium, hafnium, molybdenum and tungsten, and wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 13
Dependent Claim
144 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one metal oxynitride barrier layer, wherein each metal oxynitride barrier layer is interposed between the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode; wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein M is a metal component selected from the group consisting of chromium, hafnium, molybdenum and tungsten, and wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 14
Dependent Claim
98 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one metal oxynitride barrier layer, wherein each metal oxynitride barrier layer is interposed between the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode; and wherein the metal oxynitride barrier layer comprises a tungsten oxynitride having a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 15
Dependent Claim
98 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one metal oxynitride barrier layer, wherein each metal oxynitride barrier layer is interposed between the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode; and wherein the metal oxynitride barrier layer comprises a tungsten oxynitride having a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 16
Dependent Claim
15 words
The capacitor of claim 4 , wherein at least one electrode comprises a metal nitride.
Claim 17
Dependent Claim
14 words
The capacitor of claim 4 , wherein at least one electrode comprises tungsten nitride.
Claim 18
Dependent Claim
67 words
The capacitor of claim 4 , wherein the metal oxide dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 .
Claim 19
Dependent Claim
15 words
The capacitor of claim 4 , wherein the metal oxide dielectric layer comprises tantalum oxide.
Claim 20
Dependent Claim
121 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; and wherein the first and second metal oxynitride barrier layers comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 21
Dependent Claim
121 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; and wherein the first and second metal oxynitride barrier layers comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 22
Dependent Claim
56 words
The capacitor of claim 13 , wherein each metal oxynitride barrier layer individually comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium.
Claim 23
Dependent Claim
31 words
The capacitor of claim 14 , wherein the metal component of the first metal oxynitride barrier layer is the same as the metal component of the second metal oxynitride barrier layer.
Claim 24
Dependent Claim
140 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; wherein each metal oxynitride barrier layer individually comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 25
Dependent Claim
140 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; wherein each metal oxynitride barrier layer individually comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 26
Dependent Claim
137 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; wherein each metal oxynitride barrier layer individually comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein M is a metal component selected from the group consisting of chromium, hafnium, molybdenum and tungsten, and wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 27
Dependent Claim
137 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; wherein each metal oxynitride barrier layer individually comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; and wherein M is a metal component selected from the group consisting of chromium, hafnium, molybdenum and tungsten, and wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 28
Dependent Claim
91 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; and wherein each metal oxynitride barrier layer individually comprises a tungsten oxynitride having a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 29
Dependent Claim
91 words
A capacitor, comprising: a bottom electrode; a first metal oxynitride barrier layer overlying the bottom electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the metal oxide dielectric layer; a top electrode overlying the second metal oxynitride barrier layer; and wherein each metal oxynitride barrier layer individually comprises a tungsten oxynitride having a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 30
Dependent Claim
15 words
The capacitor of claim 13 , wherein at least one electrode comprises a metal nitride.
Claim 31
Dependent Claim
14 words
The capacitor of claim 13 , wherein at least one electrode comprises tungsten nitride.
Claim 32
Dependent Claim
31 words
The capacitor of claim 13 , wherein the bottom electrode comprises a metal nitride having a metal component the same as the metal component of the first metal oxynitride barrier layer.
Claim 33
Dependent Claim
116 words
A capacitor, comprising; a bottom electrode, wherein the bottom electrode comprises a metal nitride having a metal component; a metal oxynitride barrier layer overlying the bottom electrode, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium and wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9; a metal oxide dielectric layer overlying the metal oxynitride barrier layer; and a top electrode overlying the metal oxide dielectric layer.
Claim 34
Dependent Claim
116 words
A capacitor, comprising; a bottom electrode, wherein the bottom electrode comprises a metal nitride having a metal component; a metal oxynitride barrier layer overlying the bottom electrode, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium and wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9; a metal oxide dielectric layer overlying the metal oxynitride barrier layer; and a top electrode overlying the metal oxide dielectric layer.
Claim 35
Dependent Claim
136 words
A capacitor, comprising: a bottom electrode, wherein the bottom electrode comprises a metal nitride having a metal component; a metal oxynitride barrier layer overlying the bottom electrode, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; a metal oxide dielectric layer overlying the metal oxynitride barrier layer; a top electrode overlying the metal oxide dielectric layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 36
Dependent Claim
136 words
A capacitor, comprising: a bottom electrode, wherein the bottom electrode comprises a metal nitride having a metal component; a metal oxynitride barrier layer overlying the bottom electrode, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; a metal oxide dielectric layer overlying the metal oxynitride barrier layer; a top electrode overlying the metal oxide dielectric layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 37
Dependent Claim
136 words
A capacitor, comprising: a bottom electrode, wherein the bottom electrode comprises a metal nitride having a metal component; a metal oxynitride barrier layer overlying the bottom electrode, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; a metal oxide dielectric layer overlying the metal oxynitride barrier layer; a top electrode overlying the metal oxide dielectric layer; and wherein the metal oxynitride barrier layer comprises a tungsten oxynitride having a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 38
Dependent Claim
136 words
A capacitor, comprising: a bottom electrode, wherein the bottom electrode comprises a metal nitride having a metal component; a metal oxynitride barrier layer overlying the bottom electrode, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; a metal oxide dielectric layer overlying the metal oxynitride barrier layer; a top electrode overlying the metal oxide dielectric layer; and wherein the metal oxynitride barrier layer comprises a tungsten oxynitride having a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 39
Dependent Claim
13 words
The capacitor of claim 22 , wherein the bottom electrode comprises tungsten nitride.
Claim 40
Dependent Claim
66 words
The capacitor of claim 22 , wherein the metal oxide dielectric layer comprises a metal oxide dielectric selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 .
Claim 41
Dependent Claim
15 words
The capacitor of claim 22 , wherein the metal oxide dielectric layer comprises tantalum oxide.
Claim 42
Dependent Claim
27 words
The capacitor of claim 22 , wherein the metal component of the bottom electrode is the same as the metal component of the metal oxynitride barrier layer.
Claim 43
Dependent Claim
124 words
A capacitor, comprising: a bottom electrode; a metal oxide dielectric layer overlying the bottom electrode; a metal oxynitride barrier layer overlying the metal oxide dielectric layer, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; a top electrode overlying the metal oxide dielectric layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 44
Dependent Claim
124 words
A capacitor, comprising: a bottom electrode; a metal oxide dielectric layer overlying the bottom electrode; a metal oxynitride barrier layer overlying the metal oxide dielectric layer, wherein the metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium; a top electrode overlying the metal oxide dielectric layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 45
Dependent Claim
136 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one tungsten oxynitride barrier layer, wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; wherein the at least one tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of W minus 0.1; and wherein at least one of the top and bottom electrodes comprises tungsten nitride.
Claim 46
Dependent Claim
136 words
A capacitor, comprising: a bottom electrode; a top electrode; a metal oxide dielectric layer interposed between the bottom electrode and the top electrode; at least one tungsten oxynitride barrier layer, wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the at least one tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; wherein the at least one tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of W minus 0.1; and wherein at least one of the top and bottom electrodes comprises tungsten nitride.
Claim 47
Dependent Claim
114 words
A capacitor, comprising: a bottom electrode; a top electrode; a tantalum oxide dielectric layer interposed between the bottom electrode and the top electrode; a tungsten oxynitride barrier layer, wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; wherein at least one of the top and the bottom electrodes comprises tungsten nitride; and wherein the at least one tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 48
Dependent Claim
114 words
A capacitor, comprising: a bottom electrode; a top electrode; a tantalum oxide dielectric layer interposed between the bottom electrode and the top electrode; a tungsten oxynitride barrier layer, wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the bottom electrode or wherein the tungsten oxynitride barrier layer is interposed between the dielectric layer and the top electrode; wherein at least one of the top and the bottom electrodes comprises tungsten nitride; and wherein the at least one tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 49
Dependent Claim
124 words
A capacitor, comprising: a bottom metal nitride electrode; a first metal oxynitride barrier layer overlying the bottom metal nitride electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the dielectric layer; a top metal nitride electrode overlying the second metal oxynitride barrier layer wherein the first or second metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 50
Dependent Claim
124 words
A capacitor, comprising: a bottom metal nitride electrode; a first metal oxynitride barrier layer overlying the bottom metal nitride electrode; a metal oxide dielectric layer overlying the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying the dielectric layer; a top metal nitride electrode overlying the second metal oxynitride barrier layer wherein the first or second metal oxynitride barrier layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 51
Dependent Claim
114 words
A capacitor, comprising: a bottom tungsten nitride electrode; a first tungsten oxynitride barrier layer overlying the bottom tungsten nitride electrode; a tantalum oxide dielectric layer overlying the first tungsten oxynitride barrier layer; a second tungsten oxynitride barrier layer overlying the dielectric layer; a top tungsten nitride electrode overlying the second tungsten oxynitride barrier layer; and wherein the first or second tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the tungsten component W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the tungsten component W minus 0.1.
Claim 52
Dependent Claim
114 words
A capacitor, comprising: a bottom tungsten nitride electrode; a first tungsten oxynitride barrier layer overlying the bottom tungsten nitride electrode; a tantalum oxide dielectric layer overlying the first tungsten oxynitride barrier layer; a second tungsten oxynitride barrier layer overlying the dielectric layer; a top tungsten nitride electrode overlying the second tungsten oxynitride barrier layer; and wherein the first or second tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the tungsten component W minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the tungsten component W minus 0.1.
Claim 53
Dependent Claim
130 words
A capacitor, comprising: a bottom metal nitride electrode; a first metal oxynitride barrier layer overlying and adjoining the bottom metal nitride electrode; a metal oxide dielectric layer overlying and adjoining the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying and adjoining the dielectric layer; and a top metal nitride electrode overlying and adjoining the second metal oxynitride barrier layer; and wherein the first and second metal oxynitride barrier layers have a composition of the form MO x N y , wherein M is the metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 54
Dependent Claim
130 words
A capacitor, comprising: a bottom metal nitride electrode; a first metal oxynitride barrier layer overlying and adjoining the bottom metal nitride electrode; a metal oxide dielectric layer overlying and adjoining the first metal oxynitride barrier layer; a second metal oxynitride barrier layer overlying and adjoining the dielectric layer; and a top metal nitride electrode overlying and adjoining the second metal oxynitride barrier layer; and wherein the first and second metal oxynitride barrier layers have a composition of the form MO x N y , wherein M is the metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 55
Dependent Claim
101 words
A capacitor, comprising: a bottom tungsten nitride electrode; a first tungsten oxynitride barrier layer overlying and adjoining the bottom tungsten nitride electrode; a tantalum oxide dielectric layer overlying and adjoining the first tungsten oxynitride barrier layer; a second tungsten oxynitride barrier layer overlying and adjoining the dielectric layer; a top tungsten nitride electrode overlying and adjoining the second tungsten oxynitride barrier layer; and wherein the first or second tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 56
Dependent Claim
101 words
A capacitor, comprising: a bottom tungsten nitride electrode; a first tungsten oxynitride barrier layer overlying and adjoining the bottom tungsten nitride electrode; a tantalum oxide dielectric layer overlying and adjoining the first tungsten oxynitride barrier layer; a second tungsten oxynitride barrier layer overlying and adjoining the dielectric layer; a top tungsten nitride electrode overlying and adjoining the second tungsten oxynitride barrier layer; and wherein the first or second tungsten oxynitride barrier layer has a composition of the form WO x N y , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 57
Dependent Claim
106 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer; a dielectric layer formed on the metal oxynitride passivation layer; a top electrode overlying the dielectric layer; and wherein the metal oxynitride passivation layer has a composition of the form MO x N y , wherein M is the metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 58
Dependent Claim
106 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer; a dielectric layer formed on the metal oxynitride passivation layer; a top electrode overlying the dielectric layer; and wherein the metal oxynitride passivation layer has a composition of the form MO x N y , wherein M is the metal component and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 59
Dependent Claim
22 words
The capacitor of claim 36 , wherein a metal oxynitride barrier layer is interposed between the top electrode and the dielectric layer.
Claim 60
Dependent Claim
70 words
The capacitor of claim 36 , wherein the metal oxynitride passivation layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium, and wherein the metal oxynitride passivation layer is formed by oxidizing the metal nitride layer.
Claim 61
Dependent Claim
146 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer; a dielectric layer formed on the metal oxynitride passivation layer; a top electrode overlying the dielectric layer; wherein the metal oxynitride passivation layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium, and wherein the metal oxynitride passivation layer is formed by oxidizing the metal nitride layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 62
Dependent Claim
146 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer; a dielectric layer formed on the metal oxynitride passivation layer; a top electrode overlying the dielectric layer; wherein the metal oxynitride passivation layer comprises a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium, and wherein the metal oxynitride passivation layer is formed by oxidizing the metal nitride layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 63
Dependent Claim
64 words
The capacitor of claim 36 wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 .
Claim 64
Dependent Claim
201 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer and comprising a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium, and wherein the metal oxynitride passivation layer is formed by oxidizing the metal nitride layer, and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1; a dielectric layer formed on the metal oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; and a top electrode overlying the dielectric layer.
Claim 65
Dependent Claim
201 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer and comprising a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium, and wherein the metal oxynitride passivation layer is formed by oxidizing the metal nitride layer, and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1; a dielectric layer formed on the metal oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; and a top electrode overlying the dielectric layer.
Claim 66
Dependent Claim
22 words
The capacitor of claim 41 , wherein a metal oxynitride barrier layer is interposed between the top electrode and the dielectric layer.
Claim 67
Dependent Claim
200 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer and comprising a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium, and wherein the metal oxynitride passivation layer is formed by oxidizing the metal nitride layer; a dielectric layer formed on the metal oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; a top electrode overlying the dielectric layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 68
Dependent Claim
200 words
A capacitor, comprising: a metal nitride layer forming a bottom electrode; a metal oxynitride passivation layer formed on a surface of the metal nitride layer and comprising a metal oxynitride having a composition of the form MO x N y , wherein M is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium, and wherein the metal oxynitride passivation layer is formed by oxidizing the metal nitride layer; a dielectric layer formed on the metal oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; a top electrode overlying the dielectric layer; and wherein x ranges from approximately 0.05 to approximately one-half the maximum valence value of the metal component M minus 0.05 and y ranges from approximately 0.1 to approximately the maximum valence value of the metal component M minus 0.1.
Claim 69
Dependent Claim
145 words
A capacitor, comprising: a tungsten nitride layer forming a bottom electrode; a tungsten oxynitride passivation layer formed on a surface of the tungsten nitride layer and having a composition of the form WO x N y , wherein x ranges from approximately 0 to 3 and y ranges from approximately 0 to 6, and wherein the tungsten oxynitride passivation layer is formed by oxidizing the tungsten nitride layer; a dielectric layer formed on the tungsten oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; and a top electrode overlying the dielectric layer.
Claim 70
Dependent Claim
145 words
A capacitor, comprising: a tungsten nitride layer forming a bottom electrode; a tungsten oxynitride passivation layer formed on a surface of the tungsten nitride layer and having a composition of the form WO x N y , wherein x ranges from approximately 0 to 3 and y ranges from approximately 0 to 6, and wherein the tungsten oxynitride passivation layer is formed by oxidizing the tungsten nitride layer; a dielectric layer formed on the tungsten oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; and a top electrode overlying the dielectric layer.
Claim 71
Dependent Claim
22 words
The capacitor of claim 44 , wherein a metal oxynitride barrier layer is interposed between the top electrode and the dielectric layer.
Claim 72
Dependent Claim
24 words
The capacitor of claim 44 , wherein x ranges from approximately 0.05 to approximately 2.95 and y ranges from approximately 0.1 to approximately 5.9.
Claim 73
Dependent Claim
166 words
A capacitor, comprising: a first tungsten nitride layer forming a bottom electrode; a tungsten oxynitride passivation layer formed on a surface of the first tungsten nitride layer having a composition of the form WO x N y , wherein x ranges from approximately 0 to 3 and y ranges from approximately 0 to 6, and wherein the tungsten oxynitride passivation layer is formed by oxidizing the tungsten nitride layer; a dielectric layer formed on the tungsten oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; a tungsten oxynitride barrier layer formed on the dielectric layer; and a second tungsten nitride layer formed on the tungsten oxynitride barrier layer, thereby forming a top electrode.
Claim 74
Dependent Claim
166 words
A capacitor, comprising: a first tungsten nitride layer forming a bottom electrode; a tungsten oxynitride passivation layer formed on a surface of the first tungsten nitride layer having a composition of the form WO x N y , wherein x ranges from approximately 0 to 3 and y ranges from approximately 0 to 6, and wherein the tungsten oxynitride passivation layer is formed by oxidizing the tungsten nitride layer; a dielectric layer formed on the tungsten oxynitride passivation layer, wherein the dielectric layer comprises a metal oxide dielectric material selected from the group consisting of Ba z Sr (1−z) TiO 3 , (where 0<z<1), BaTiO 3 , SrTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 , (Pb,La)TiO 3 , Ta 2 O 5 , KNO 3 , Al 2 O 3 and LiNbO 3 ; a tungsten oxynitride barrier layer formed on the dielectric layer; and a second tungsten nitride layer formed on the tungsten oxynitride barrier layer, thereby forming a top electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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