US5858851A
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Manufacturing method of electrode
Assignee: Sharp Corp
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Filing: 1996-09-30
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Granted: 1999-01-12
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Expires: 2016-09-30
Abstract
Abstract A titanium film and a titanium nitride film are sequentially formed on a polysilicon plug. Next, the titanium nitride film is oxidized to form an oxidized titanium nitride film. Thereafter, a lower electrode and a PZT film are formed. A diffusion barrier layer is prepared from the oxidized titanium nitride film and is oxidized before the lower electrode is formed. As a result, unlike in prior art, the diffusion barrier layer is not oxidized after the lower electrode is formed. Peel-off between the diffusion barrier layer and the lower electrode due to the oxidation is thus prevented.
Inventors
- 👤 Satoru Yamagata
- 👤 Shigeo Onishi
- 👤 Jun Kudo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:56
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H01; H01G; H01G9/00; H01G9/004; H01G9/04; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P95/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
106 words
A method of manufacturing an electrode including: an electrode part; and a conductive diffusion barrier layer, provided on a surface of the electrode part for stopping an impurity from passing, said method comprising the steps of: providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film; (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part; and (2) providing, after the step (1), the electrode part on the interface of the diffusion barrier layer.
Claim 2
Independent Claim
106 words
A method of manufacturing an electrode including: an electrode part; and a conductive diffusion barrier layer, provided on a surface of the electrode part for stopping an impurity from passing, said method comprising the steps of: providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film; (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part; and (2) providing, after the step (1), the electrode part on the interface of the diffusion barrier layer.
Claim 3
Dependent Claim
21 words
The method of manufacturing the electrode as defined in claim 1, wherein the metal nitride film is a titanium nitride film.
Claim 4
Independent Claim
148 words
A method of manufacturing a capacitor including: an electrode having an electrode part, and a conductive diffusion barrier layer provided on a surface of the electrode part for stopping an impurity from passing; and a dielectric film provided on another surface of the electrode part having ferroelectric properties or a high dielectric constant, said method comprising the steps of: providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film; (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part; (2) providing, after the step (1), the electrode part on the interface of the diffusion barrier layer; and (3) providing, after the step (2), the dielectric film on a side opposite the interface of the electrode part.
Claim 5
Independent Claim
148 words
A method of manufacturing a capacitor including: an electrode having an electrode part, and a conductive diffusion barrier layer provided on a surface of the electrode part for stopping an impurity from passing; and a dielectric film provided on another surface of the electrode part having ferroelectric properties or a high dielectric constant, said method comprising the steps of: providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film; (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part; (2) providing, after the step (1), the electrode part on the interface of the diffusion barrier layer; and (3) providing, after the step (2), the dielectric film on a side opposite the interface of the electrode part.
Claim 6
Independent Claim
184 words
A method of manufacturing a semiconductor device comprising: a capacitor including an electrode having an electrode part, and a conductive diffusion barrier layer provided on a surface of the electrode part for stopping an impurity from passing, and said capacitor including a dielectric film provided on another surface of the electrode part having ferroelectric properties or a high dielectric constant; and a semiconductor material for controlling charge and discharge of the capacitor, said method comprising the steps of: providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film; (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part; (2) providing, after step (1), the electrode part on the interface of the diffusion barrier layer; (3) providing, after the step (2), the dielectric film on a side opposite the interface of the electrode part; and (4) providing the semiconductor which is to be connected to the electrode part via the diffusion barrier layer.
Claim 7
Independent Claim
184 words
A method of manufacturing a semiconductor device comprising: a capacitor including an electrode having an electrode part, and a conductive diffusion barrier layer provided on a surface of the electrode part for stopping an impurity from passing, and said capacitor including a dielectric film provided on another surface of the electrode part having ferroelectric properties or a high dielectric constant; and a semiconductor material for controlling charge and discharge of the capacitor, said method comprising the steps of: providing the diffusion barrier layer at least whose interface with the electrode part is composed of a metal nitride film; (1) providing a peeling prevention film for preventing peeling of the electrode part and the diffusion barrier layer, by oxidizing a contact surface of the metal nitride film and the electrode part; (2) providing, after step (1), the electrode part on the interface of the diffusion barrier layer; (3) providing, after the step (2), the dielectric film on a side opposite the interface of the electrode part; and (4) providing the semiconductor which is to be connected to the electrode part via the diffusion barrier layer.
Claim 8
Independent Claim
104 words
A method of manufacturing an electrode, comprising the steps of: providing an electrode part; providing a conductive diffusion barrier layer on a surface of the electrode, said conductive diffusion barrier layer preventing an impurity from passing therethrough, an interface of said diffusion barrier layer and said electrode part comprising a metal nitride film; oxidizing a contact surface of said metal nitride film and the electrode part to provide a peeling prevention film, said peeling prevention film preventing peeling of the electrode part from the diffusion barrier layer; and providing the electrode part on the interface of the diffusion barrier layer after the oxidizing step.
Claim 9
Independent Claim
104 words
A method of manufacturing an electrode, comprising the steps of: providing an electrode part; providing a conductive diffusion barrier layer on a surface of the electrode, said conductive diffusion barrier layer preventing an impurity from passing therethrough, an interface of said diffusion barrier layer and said electrode part comprising a metal nitride film; oxidizing a contact surface of said metal nitride film and the electrode part to provide a peeling prevention film, said peeling prevention film preventing peeling of the electrode part from the diffusion barrier layer; and providing the electrode part on the interface of the diffusion barrier layer after the oxidizing step.
Claim 10
Independent Claim
147 words
A method of manufacturing a capacitor, comprising the steps of: providing an electrode comprising an electrode part and a conductive diffusion barrier layer provided on a surface of the electrode part, said diffusion barrier layer preventing an impurity from passing therethrough, and whose interface with said electrode part comprises a metal nitride film; providing a dielectric film on another surface of the electrode part, said dielectric film having at least one of a high dielectric constant and ferroelectric properties; oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention film, said peeling prevention film preventing peeling between the electrode part and the diffusion barrier layer; disposing the electrode part on the interface of the electrode and the diffusion barrier layer after said oxidizing step; and disposing the dielectric film on the side opposite the interface of the electrode part.
Claim 11
Independent Claim
147 words
A method of manufacturing a capacitor, comprising the steps of: providing an electrode comprising an electrode part and a conductive diffusion barrier layer provided on a surface of the electrode part, said diffusion barrier layer preventing an impurity from passing therethrough, and whose interface with said electrode part comprises a metal nitride film; providing a dielectric film on another surface of the electrode part, said dielectric film having at least one of a high dielectric constant and ferroelectric properties; oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention film, said peeling prevention film preventing peeling between the electrode part and the diffusion barrier layer; disposing the electrode part on the interface of the electrode and the diffusion barrier layer after said oxidizing step; and disposing the dielectric film on the side opposite the interface of the electrode part.
Claim 12
Independent Claim
168 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a capacitor comprising an electrode including an electrode part and a conductive diffusion barrier layer provided on a surface of the electrode part, said diffusion barrier layer preventing an impurity from passing therethrough, an interface of said diffusion barrier layer with said electrode part comprising a metal nitride film, the capacitor having a dielectric film disposed on another surface of the electrode part, said dielectric film having at least one of a high dielectric constant and ferroelectric properties; oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention film for preventing peeling between the electrode part and the diffusion barrier layer; disposing the electrode part on the interface of the diffusion barrier layer and the electrode after the oxidizing step; disposing the dielectric film on a side opposite the interface of the electrode part; and connecting the semiconductor device to the electrode part via the diffusion barrier layer.
Claim 13
Independent Claim
168 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a capacitor comprising an electrode including an electrode part and a conductive diffusion barrier layer provided on a surface of the electrode part, said diffusion barrier layer preventing an impurity from passing therethrough, an interface of said diffusion barrier layer with said electrode part comprising a metal nitride film, the capacitor having a dielectric film disposed on another surface of the electrode part, said dielectric film having at least one of a high dielectric constant and ferroelectric properties; oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention film for preventing peeling between the electrode part and the diffusion barrier layer; disposing the electrode part on the interface of the diffusion barrier layer and the electrode after the oxidizing step; disposing the dielectric film on a side opposite the interface of the electrode part; and connecting the semiconductor device to the electrode part via the diffusion barrier layer.
Claim 14
Independent Claim
79 words
A method of manufacturing an electrode, comprising the steps of: forming an electrode part; forming a conductive diffusion barrier layer on a surface of the electrode part, said diffusion barrier layer having an interface with the electrode part comprising a metal nitride film; oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention layer; and disposing the electrode part on the interface of the diffusion barrier layer after the oxidizing step.
Claim 15
Independent Claim
79 words
A method of manufacturing an electrode, comprising the steps of: forming an electrode part; forming a conductive diffusion barrier layer on a surface of the electrode part, said diffusion barrier layer having an interface with the electrode part comprising a metal nitride film; oxidizing a contact surface of the metal nitride film and the electrode part to form a peeling prevention layer; and disposing the electrode part on the interface of the diffusion barrier layer after the oxidizing step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |