Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
172 words
A method for manufacturing a capacitor of a semiconductor device comprising the steps of: forming a gate insulation film and a gate electrode on a semiconductor substrate; ion-implanting to form a source and drain region on said semiconductor substrate, using said gate electrode as a mask; forming a first insulation film for insulating said gate electrode; forming a plug film on said source region; forming a second insulation film having a contact hole on said plug film; forming a first diffusion-blocking film formed on said plug film in said contract hole; forming a second diffusion-blocking film on the surface of said first diffusion-blocking film, on the surface of said second insulation film, and on sidewalls of said contact hole; forming a third diffusion-blocking film on said second diffusion-blocking film; forming a first conductive layer on said third diffusion-blocking film, to be used as a storage electrode; forming a dielectric layer on said first conductive layer; and forming a second conductive layer on said dielectric layer, to be used as a plate electrode.
Claim 2
Independent Claim
172 words
A method for manufacturing a capacitor of a semiconductor device comprising the steps of: forming a gate insulation film and a gate electrode on a semiconductor substrate; ion-implanting to form a source and drain region on said semiconductor substrate, using said gate electrode as a mask; forming a first insulation film for insulating said gate electrode; forming a plug film on said source region; forming a second insulation film having a contact hole on said plug film; forming a first diffusion-blocking film formed on said plug film in said contract hole; forming a second diffusion-blocking film on the surface of said first diffusion-blocking film, on the surface of said second insulation film, and on sidewalls of said contact hole; forming a third diffusion-blocking film on said second diffusion-blocking film; forming a first conductive layer on said third diffusion-blocking film, to be used as a storage electrode; forming a dielectric layer on said first conductive layer; and forming a second conductive layer on said dielectric layer, to be used as a plate electrode.
Claim 3
Dependent Claim
24 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said first diffusion-blocking film comprises a titanium silicide film.
Claim 4
Dependent Claim
36 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said second diffusion-blocking film is formed of an iridium film and said third diffusion-blocking film is formed of an iridium-oxide film.
Claim 5
Dependent Claim
36 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said second diffusion-blocking film is formed of a ruthenium film and said third diffusion-blocking film is formed of a ruthenium-oxide film.
Claim 6
Dependent Claim
30 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said first conductive layer and said second conductive layer are formed of non-oxidizable metal layers.
Claim 7
Dependent Claim
41 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said dielectric layer is formed from at least one of BSTO compounds, STO compounds, Ta 2 O 3 , a PZT film and a Y-1 material.
Claim 8
Dependent Claim
30 words
A method for manufacturing a capacitor of a semiconductor device according to claim 8, wherein said third diffusion-blocking film is formed by oxidizing the surface of said second diffusion-blocking film.
Claim 9
Dependent Claim
36 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said third diffusion-blocking film is an oxide film formed by performing at least one of reactive sputtering and an MOCVD method.
Claim 10
Dependent Claim
27 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said first and second conductive layers are formed by an MOCVD method.