Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film

Claim 1

A semiconductor device on a substrate comprising: a transistor having source and drain regions in the substrate, a gate insulating film located over said substrate, and a gate electrode located over said gate insulating film; a ferroelectric capacitor coupled to said transistor, said ferroelectric capacitor having upper and lower plate electrodes and ferroelectric dielectric film between said plate electrodes; and a pad; a second insulating layer located over said pad; a humidity-resisting hydrogen barrier film consisting of TiON located over said capacitor and said second insulating layer; a contact hole located through said humidity-resisting hydrogen barrier film and said second insulating film to said pad; and a corrosion-resisting film located over said humidity-resisting hydrogen barrier film, in said contact hole and over a portion of said pad; and wherein said corrosion-resisting film insulates said humidity-resisting hydrogen barrier film from said contact hole.