US6201276B1
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Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films
Assignee: Micron Technology Inc
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Filing: 1998-07-14
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Granted: 2001-03-13
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Expires: 2018-07-14
Abstract
Abstract A capacitor for a semiconductor device is fabricated by a method which reduces the interaction of a capacitor electrode and a dielectric layer in the capacitor. One or more passivation layers are formed at the interface between the dielectric layer and an electrode in the capacitor by exposing the dielectric layer or electrode to a reactive environment during fabrication in order to form a passivation layer thereon prior to forming an overlying dielectric layer or electrode. The passivation layer reduces the diffusion of oxygen from the dielectric layer to the electrode, resulting in reduced current leakage in the capacitor.
Inventors
- 👤 Vishnu K. Agarwal
- 👤 Gurtej S. Sandhu
- 👤 Garo J. Derderian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:37
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
44 words
A semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a dielectric layer over the first conductive layer; a passivation layer over the dielectric layer wherein said passivation layer constitutes an electrical conductor; and a second conductive layer over the passivation layer.
Claim 2
Dependent Claim
44 words
A semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a dielectric layer over the first conductive layer; a passivation layer over the dielectric layer wherein said passivation layer constitutes an electrical conductor; and a second conductive layer over the passivation layer.
Claim 3
Dependent Claim
22 words
The device of claim 1 , wherein the first conductive layer, the dielectric layer, and the second conductive layer form capacitor elements.
Claim 4
Dependent Claim
46 words
The device of claim 1 , wherein the first and second conductive layers are composed of a material selected from the group consisting of polysilicon, titanium nitride, tungsten, molybdenum, tungsten silicide, tantalum, tungsten nitride, Pt, Ru, RuO x , Ir, IrO x , Pt combinations thereof.
Claim 5
Dependent Claim
33 words
The device of claim 1 , wherein the dielectric layer is composed of a material selected from the group consisting of silicon nitride, silicon dioxide, tantalum oxide, strontium titanate, and barium strontium titanate.
Claim 6
Dependent Claim
95 words
The device of claim 1 , wherein the passivation layer which constitutes an electrical conductor includes a compound having a formula selected from the group consisting of M(O) y X z , M(O) y X z W n , M x X y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6.
Claim 7
Dependent Claim
27 words
The device of claim 5 , wherein M is selected from the group consisting of silicon, tantalum, strontium titanate, barium strontium titanate, boron, boron phosphate, and phosphorus.
Claim 8
Dependent Claim
29 words
The device of claim 1 , wherein the passivation layer includes compounds selected from the group consisting of tantalum nitride, tantalum oxynitride, tantalum fluoride, tantalum carbide, and combinations thereof.
Claim 9
Dependent Claim
48 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a passivation layer over the first conductive layer, wherein said passivation layer constitutes an electrical conductor; a dielectric layer over the passivation layer; and a second conductive layer over the dielectric layer.
Claim 10
Dependent Claim
48 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a passivation layer over the first conductive layer, wherein said passivation layer constitutes an electrical conductor; a dielectric layer over the passivation layer; and a second conductive layer over the dielectric layer.
Claim 11
Dependent Claim
96 words
The capacitor structure of claim 8 , wherein the passivation layer which constitutes an electrical conductor includes a compound having a formula selected from the group consisting of M(O) y X z , M(O) y X z W n , M x X y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6.
Claim 12
Dependent Claim
28 words
The capacitor structure of claim 9 , wherein M is selected from the group consisting of silicon, tantalum, strontium titanate, barium strontium titanate, boron, boron phosphate, and phosphorus.
Claim 13
Dependent Claim
95 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first passivation layer over the first conductive layer, the first passivation layer formed by exposing the first conductive layer to a reactive environment; a dielectric layer over the first passivation layer; a second passivation layer over the dielectric layer, the second passivation layer formed by exposing the dielectric layer to the reactive environment; and a second conductive layer over the second passivation layer; wherein at least one of said first and second passivation layers constitutes an electrical conductor.
Claim 14
Dependent Claim
95 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first passivation layer over the first conductive layer, the first passivation layer formed by exposing the first conductive layer to a reactive environment; a dielectric layer over the first passivation layer; a second passivation layer over the dielectric layer, the second passivation layer formed by exposing the dielectric layer to the reactive environment; and a second conductive layer over the second passivation layer; wherein at least one of said first and second passivation layers constitutes an electrical conductor.
Claim 15
Dependent Claim
118 words
The capacitor structure of claim 1 , wherein the first and second passivation layers include at least one compound having a formula selected from the group consisting of M(O) y X z , M(O) y X z W n , M x X y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X, Y, and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6, and at least one of said first and second passivation layers including said at least one compound constitutes an electrical conductor.
Claim 16
Dependent Claim
28 words
The capacitor structure of claim 12 , wherein M is selected from the group consisting of silicon, tantalum, strontium titanate, barium strontium titanate, boron, boron phosphate, and phosphorus.
Claim 17
Dependent Claim
59 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first dielectric layer over the first conductive layer; a passivation layer over the first dielectric layer, wherein said passivation layer constitutes an electrical conductor; a second dielectric layer over the passivation layer; and a second conductive layer over the second dielectric layer.
Claim 18
Dependent Claim
59 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first dielectric layer over the first conductive layer; a passivation layer over the first dielectric layer, wherein said passivation layer constitutes an electrical conductor; a second dielectric layer over the passivation layer; and a second conductive layer over the second dielectric layer.
Claim 19
Dependent Claim
94 words
The capacitor structure of claim 14 , wherein the passivation layer which constitutes an electrical conductor includes a compound having a formula selected from the group consisting of M(O) y X z , M(O) y W n , M x X y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6.
Claim 20
Dependent Claim
28 words
The capacitor structure of claim 15 , wherein M is selected from the group consisting of silicon, tantalum, strontium titanate, barium strontium titanate, boron, boron phosphate, and phosphorus.
Claim 21
Dependent Claim
77 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first dielectric layer over the first conductive layer; a first passivation layer over the first dielectric layer; a second dielectric layer over the first passivation layer; a second passivation layer over the second dielectric layer; and a second conductive layer over the second passivation layer, wherein at least one of said first and second passivation layers constitutes an electrical conductor.
Claim 22
Dependent Claim
77 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first dielectric layer over the first conductive layer; a first passivation layer over the first dielectric layer; a second dielectric layer over the first passivation layer; a second passivation layer over the second dielectric layer; and a second conductive layer over the second passivation layer, wherein at least one of said first and second passivation layers constitutes an electrical conductor.
Claim 23
Dependent Claim
115 words
The capacitor structure of claim 17 , wherein the first and second passivation layers include at least one compound having a formula selected from the group consisting of M(O) y X z , M(O) y W n , M x Y y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6, and at least one of said first and second passivation layers including said at least one compound constitutes an electrical conductor.
Claim 24
Dependent Claim
28 words
The capacitor structure of claim 18 , wherein M is selected from the group consisting of silicon, tantalum, strontium titanate, barium strontium titanate, boron, boron phosphate, and phosphorus.
Claim 25
Dependent Claim
50 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer on a semiconductor substrate; an electrically conductive passivation layer on the first conductive layer, wherein said passivation layer constitutes an electrical conductor; a dielectric layer on the passivation layer; and a second conductive layer on the dielectric layer.
Claim 26
Dependent Claim
50 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer on a semiconductor substrate; an electrically conductive passivation layer on the first conductive layer, wherein said passivation layer constitutes an electrical conductor; a dielectric layer on the passivation layer; and a second conductive layer on the dielectric layer.
Claim 27
Dependent Claim
96 words
The capacitor structure of claim 20 , wherein the passivation layer which constitutes an electrical conductor includes a compound having a formula selected from the group consisting of M(O) y X z , M(O) y X z W n , M x X y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6.
Claim 28
Dependent Claim
66 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer on a semiconductor substrate; an first passivation layer on the first conductive layer; a dielectric layer on the first passivation layer; a second passivation layer on the dielectric layer; and a second conductive layer on the second passivation layer; wherein at least one of said first and second passivation layers constitutes an electrical conductor.
Claim 29
Dependent Claim
66 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer on a semiconductor substrate; an first passivation layer on the first conductive layer; a dielectric layer on the first passivation layer; a second passivation layer on the dielectric layer; and a second conductive layer on the second passivation layer; wherein at least one of said first and second passivation layers constitutes an electrical conductor.
Claim 30
Dependent Claim
117 words
The capacitor structure of claim 22 , wherein the first and second passivation layers include at least one compound having a formula selected from the group consisting of M(O) y X z , M(O) y X z W n , M x X y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6, and at least one of said first and second passivation layers including said at least one compound constitutes an electrical conductor.
Claim 31
Dependent Claim
28 words
The capacitor structure of claim 18 , wherein M is selected from the group consisting of silicon, tantalum, strontium titanate, barium strontium titanate, boron, boron phosphate, and phosphorus.
Claim 32
Dependent Claim
87 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first passivation layer over the first conductive layer; a first dielectric layer over the first passivation layer; a second passivation layer over the first dielectric layer; a second dielectric layer over the second passivation layer; a third passivation layer over the second dielectric layer; and a second conductive layer over the third passivation layer, wherein at least one of said first, second and third passivation layers constitutes an electrical conductor.
Claim 33
Dependent Claim
87 words
A capacitor structure for a semiconductor device, comprising: a first conductive layer over a semiconductor substrate; a first passivation layer over the first conductive layer; a first dielectric layer over the first passivation layer; a second passivation layer over the first dielectric layer; a second dielectric layer over the second passivation layer; a third passivation layer over the second dielectric layer; and a second conductive layer over the third passivation layer, wherein at least one of said first, second and third passivation layers constitutes an electrical conductor.
Claim 34
Dependent Claim
122 words
The capacitor structure of claim 25 , wherein at least one the first, second, and third passivation layers include at least one compound having a formula selected from the group consisting of M(O) y X z , M(O) y X z W n , M x X y , and combinations thereof, wherein M is any species present in the dielectric layer other than oxygen or nitrogen, and wherein X and W are selected form the group consisting of nitrogen, fluorine, carbon, chlorine, iodine, and CO 3 , and n, x, y and z are integers from 1 to 6, and at least one of said first, second and third passivation layers including said at least one compound constitutes an electrical conductor.
Claim 35
Dependent Claim
28 words
The capacitor structure of claim 26 , wherein M is selected from the group consisting of silicon, tantalum, strontium titanate, barium strontium titanate, boron, boron phosphate, and phosphorus.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-12 | 2004-09-11 | 2005-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-12 | 2008-09-11 | 2009-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-12 | 2012-09-11 | 2013-03-13 | $7700.00 | Window Closed / Lapsed |