US5744832A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier
Assignee: US Philips Corp
•
Filing: 1995-10-03
•
Granted: 1998-04-28
•
Expires: 2015-10-03
Abstract
Abstract A semiconductor device includes a semiconductor body (3) with a semiconductor element (1) with an electrically conducting region (5) on which a capacitor (2) forming a memory element is present with a lower electrode (11), an oxidic ferroelectric dielectric (12), and an upper electrode (13), which lower electrode (11) makes electrical contact with the conducting region (5) and includes a layer with a conductive metal oxide (112) and a layer (111) including platinum. The layer with the conductive metal oxide (112) acts as an oxygen barrier during manufacture. The invention also relates to a method of manufacturing such a semiconductor device. The device is characterized in that the layer including platinum (111) contains more than 15 atom % of a metal capable of forming a conductive metal oxide, and in that the layer (112) with the conductive metal oxide is present between the layer (111) comprising platinum and the ferroelectric dielectric (12). A good electrical contact between the lower electrode (11) and the conducting region (5) after manufacture is achieved thereby.
Inventors
- 👤 Robertus A.M. Wolters
- 👤 Johanna H.H.M. Kemperman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:41
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D64/00; H10D64/60
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
147 words
A semiconductor device comprising: a semiconductor body with a an electrically conducting region and a capacitor forming a memory element, said capacitor comprising a lower electrode, an oxidic ferroelectric dielectric, and an upper electrode, said lower electrode being in electrical contact with the conducting region and comprising a layer with a conductive metal oxide and a layer comprising platinum, the layer comprising platinum containing more than 15 atom % of a metal other than platinum capable of forming a conductive metal oxide, the layer comprising the conductive metal oxide being present between the layer comprising the platinum and the ferroelectric dielectric, and said lower electrode including two oxygen barriers, a first oxygen barrier comprising an alloy of said platinum and said metal other than platinum capable of forming said conductive metal oxide and a second oxygen barrier comprised by said first layer of a conductive metal oxide.
Claim 2
Dependent Claim
147 words
A semiconductor device comprising: a semiconductor body with a an electrically conducting region and a capacitor forming a memory element, said capacitor comprising a lower electrode, an oxidic ferroelectric dielectric, and an upper electrode, said lower electrode being in electrical contact with the conducting region and comprising a layer with a conductive metal oxide and a layer comprising platinum, the layer comprising platinum containing more than 15 atom % of a metal other than platinum capable of forming a conductive metal oxide, the layer comprising the conductive metal oxide being present between the layer comprising the platinum and the ferroelectric dielectric, and said lower electrode including two oxygen barriers, a first oxygen barrier comprising an alloy of said platinum and said metal other than platinum capable of forming said conductive metal oxide and a second oxygen barrier comprised by said first layer of a conductive metal oxide.
Claim 3
Dependent Claim
22 words
A semiconductor device as claimed in claim 1, characterized in that the metal capable of forming a conductive metal oxide comprises ruthenium.
Claim 4
Dependent Claim
33 words
A semiconductor device as claimed in claim 1, characterized in that a layer of the metal capable of forming a conductive oxide is present between the layer comprising platinum and the conducting region.
Claim 5
Dependent Claim
16 words
A semiconductor device as claimed in claim 1, characterized in that the conducting region comprises tungsten.
Claim 6
Dependent Claim
30 words
A semiconductor device as claimed in claim 1, characterized in that an electrical connection between or to further parts of the semiconductor device is formed from the layer comprising platinum.
Claim 7
Dependent Claim
129 words
A semiconductor device, comprising: a semiconductor body; a conductive region on the semiconductor body; a ferroelectric layer comprising a ferroelectric material; and an electrode structure between the ferroelectric layer and the conductive region, said electrode structure comprising a first layer of a conductive metal oxide adjacent the ferroelectric layer and a second layer between the first layer and the conductive region, said second layer comprising a sublayer of platinum and a sublayer of a metal other than platinum capable of forming a conductive metal oxide, electrode structure including two oxygen barriers, a first oxygen barrier comprising an alloy of said platinum and said metal other than platinum capable of forming said conductive metal oxide and a second oxygen barrier comprised by said first layer of a conductive metal oxide.
Claim 8
Dependent Claim
129 words
A semiconductor device, comprising: a semiconductor body; a conductive region on the semiconductor body; a ferroelectric layer comprising a ferroelectric material; and an electrode structure between the ferroelectric layer and the conductive region, said electrode structure comprising a first layer of a conductive metal oxide adjacent the ferroelectric layer and a second layer between the first layer and the conductive region, said second layer comprising a sublayer of platinum and a sublayer of a metal other than platinum capable of forming a conductive metal oxide, electrode structure including two oxygen barriers, a first oxygen barrier comprising an alloy of said platinum and said metal other than platinum capable of forming said conductive metal oxide and a second oxygen barrier comprised by said first layer of a conductive metal oxide.
Claim 9
Dependent Claim
102 words
A semiconductor device, comprising: a semiconductor body; a conductive region on the semiconductor body; a ferroelectric layer comprising a ferroelectric material; and an electrode structure between the ferroelectric layer and the conductive region, said electrode structure comprising a first layer of a conductive metal oxide adjacent the ferroelectric layer and a second layer between the first layer and the conductive region, said second layer comprising platinum and at least 15 atm % of at least one of rhenium and ruthenium, said electrode structure including an oxygen barrier comprising an alloy of said platinum and said at least one of rhenium and ruthenium.
Claim 10
Dependent Claim
102 words
A semiconductor device, comprising: a semiconductor body; a conductive region on the semiconductor body; a ferroelectric layer comprising a ferroelectric material; and an electrode structure between the ferroelectric layer and the conductive region, said electrode structure comprising a first layer of a conductive metal oxide adjacent the ferroelectric layer and a second layer between the first layer and the conductive region, said second layer comprising platinum and at least 15 atm % of at least one of rhenium and ruthenium, said electrode structure including an oxygen barrier comprising an alloy of said platinum and said at least one of rhenium and ruthenium.
Claim 11
Dependent Claim
13 words
A semiconductor device according to claim 7, wherein said conductive region comprises tungsten.
Claim 12
Dependent Claim
17 words
A semiconductor device according to claim 7, wherein said second layer consists essentially of platinum and ruthenium.
References Cited (Backward Citations)
EP0478799A1
Cited
US5164808A
Cited
US5300799A
Cited
US5382817A
Cited
US5313089A
Cited
US5555486A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-27 | 2001-10-27 | 2002-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-27 | 2005-10-27 | 2006-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-27 | 2009-10-27 | 2010-04-28 | $7700.00 | Window Closed / Lapsed |