US5780891A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nonvolatile floating gate memory with improved interploy dielectric
Assignee: Micron Technology Inc
•
Filing: 1996-04-17
•
Granted: 1998-07-14
•
Expires: 2016-04-17
Abstract
Abstract A floating memory device utilizing a composite oxide/oxynitride or oxide/oxynitride/oxide interpoly dielectric.
Inventors
- 👤 Ralph Kauffman
- 👤 Roger Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 20:59
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; H10B69/00; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; Y; Y10; Y10S; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
66 words
A floating gate memory device, comprising: a. a floating gate; b. a control gate over the floating gate; and c. a dielectric disposed between the control gate and the floating gate, the dielectric comprising a layer of silicon oxide and a discrete layer of silicon oxynitride formed on the layer of silicon oxide, the layer of oxynitride having a refractory index of between 1.84 and 1.95.
Claim 2
Dependent Claim
66 words
A floating gate memory device, comprising: a. a floating gate; b. a control gate over the floating gate; and c. a dielectric disposed between the control gate and the floating gate, the dielectric comprising a layer of silicon oxide and a discrete layer of silicon oxynitride formed on the layer of silicon oxide, the layer of oxynitride having a refractory index of between 1.84 and 1.95.
Claim 3
Dependent Claim
99 words
A floating gate memory device, comprising: a. a silicon substrate; b. a floating gate over the silicon substrate; c. a channel region in the substrate beneath the floating gate; d. a control gate over the floating gate; e. a dielectric disposed between the control gate and the floating gate, the dielectric comprising a layer of silicon oxide and a discrete layer of silicon oxynitride formed on the layer of silicon oxide, the layer of silicon oxynitride having a refractory index of between 1.84 and 1.95; and f. source and drain regions in the substrate adjacent to the channel region.
Claim 4
Dependent Claim
99 words
A floating gate memory device, comprising: a. a silicon substrate; b. a floating gate over the silicon substrate; c. a channel region in the substrate beneath the floating gate; d. a control gate over the floating gate; e. a dielectric disposed between the control gate and the floating gate, the dielectric comprising a layer of silicon oxide and a discrete layer of silicon oxynitride formed on the layer of silicon oxide, the layer of silicon oxynitride having a refractory index of between 1.84 and 1.95; and f. source and drain regions in the substrate adjacent to the channel region.
Claim 5
Dependent Claim
27 words
A floating gate memory device according to claim 2, wherein the dielectric further comprises a second layer of silicon oxide formed on the layer of silicon oxynitride.
References Cited (Backward Citations)
US4613956A
Cited
US4697330A
Cited
US5010024A
Cited
US5063431A
Cited
US4937756A
Cited
US5256584A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-13 | 2002-01-12 | 2002-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-13 | 2006-01-12 | 2006-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-13 | 2010-01-12 | 2010-07-14 | $7700.00 | Window Closed / Lapsed |