US5063431A
Expired / Lapsed
US
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Semiconductor device having a two-layer gate structure
Assignee: Toshiba Corp
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Filing: 1988-07-29
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Granted: 1991-11-05
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Expires: 2008-07-29
Abstract
Abstract A semiconductor device is disclosed, which comprises source and drain regions formed in a spaced-apart relation to each other on an isolated semiconductor substrate surface, a first conductive layer formed over a channel region between the source and drain regions via a gate insulating film and serving as a floating gate electrode, a two-layer insulating layer formed on the first conductive layer and consisting of a silicon oxynitride film and a silicon oxide film, and a second conductive layer formed on the two-layer insulating layer and serving as a control gate electrode. In the semiconductor device of this structure, the silicon oxynitride film traps fewer electrons, and electrons are infrequently trapped at the time of data erasing, so that data-erasing characteristics can be improved. Further, since fewer electrons are trapped, unlike the prior art insulating layer utilizing a silicon nitride film, there is no need for providing any silicon oxide film on each side, and with the two-layer structure consisting of the silicon oxynitride film and a silicon oxide film it is possible to obtain sufficient insulation and film thickness reduction.
Inventors
- 👤 Yohichi Ohshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:51
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/40; H10B41/42; H10B41/43; H10B41/48; H10B41/46; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01346
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
146 words
A semiconductor device comprising: a first field oxide layer, formed in a memory cell transistor formation region, and a first gate oxide film of a first transistor, formed in said memory cell transistor formation region; a floating gate electrode of said first transistor, formed on said first gate oxide film of said first transistor; a two-layer insulating film consisting of a silicon oxynitride film and a silicon oxide film formed on said floating gate electrode; a control gate electrode of said first transistor, formed on said two-layer insulating film; a second field oxide layer of a peripheral circuit transistor formation region and a second gate oxide film of a second transistor, having the same structure as and consisting of the same materials as said two-layer insulating film of said first transistor; and a gate electrode of said second transistor, formed on said second gate oxide film.
Claim 2
Dependent Claim
146 words
A semiconductor device comprising: a first field oxide layer, formed in a memory cell transistor formation region, and a first gate oxide film of a first transistor, formed in said memory cell transistor formation region; a floating gate electrode of said first transistor, formed on said first gate oxide film of said first transistor; a two-layer insulating film consisting of a silicon oxynitride film and a silicon oxide film formed on said floating gate electrode; a control gate electrode of said first transistor, formed on said two-layer insulating film; a second field oxide layer of a peripheral circuit transistor formation region and a second gate oxide film of a second transistor, having the same structure as and consisting of the same materials as said two-layer insulating film of said first transistor; and a gate electrode of said second transistor, formed on said second gate oxide film.
Claim 3
Dependent Claim
19 words
The semiconductor device according to claim 1, wherein said silicon oxide film is formed on said silicon oxynitride film.
Claim 4
Dependent Claim
141 words
A semiconductor device comprising: a first field oxide layer, formed in a memory cell transistor formation region, and a first gate oxide film of a first transistor, formed in said memory cell transistor formation region; a floating gate electrode of said first transistor, formed on said first gate oxide film of said first transistor; a two-layer insulating film consisting of a silicon oxynitride film and a silicon oxide film formed on said floating gate electrode; a control gate electrode of said first transistor, formed on said two-layer insulating film; a second field oxide layer, formed in a peripheral circuit transistor formation region, and a second gate oxide film of a second transistor, consisting of the same materials as said two-layer insulating film of said first transistor; and a gate electrode of said second transistor, formed on said second gate oxide film.
Claim 5
Dependent Claim
141 words
A semiconductor device comprising: a first field oxide layer, formed in a memory cell transistor formation region, and a first gate oxide film of a first transistor, formed in said memory cell transistor formation region; a floating gate electrode of said first transistor, formed on said first gate oxide film of said first transistor; a two-layer insulating film consisting of a silicon oxynitride film and a silicon oxide film formed on said floating gate electrode; a control gate electrode of said first transistor, formed on said two-layer insulating film; a second field oxide layer, formed in a peripheral circuit transistor formation region, and a second gate oxide film of a second transistor, consisting of the same materials as said two-layer insulating film of said first transistor; and a gate electrode of said second transistor, formed on said second gate oxide film.
Claim 6
Dependent Claim
19 words
The semiconductor device according to claim 5, wherein said silicon oxide film is formed on said silicon oxynitride film.
References Cited (Backward Citations)
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