US6207489B1
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Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film
Assignee: Samsung Electronics Co Ltd
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Filing: 1999-09-10
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Granted: 2001-03-27
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Expires: 2019-09-10
Abstract
Abstract A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.
Inventors
- 👤 Kab-jin Nam
- 👤 Seok-jun Won
- 👤 Ki-yeon Park
- 👤 Yong-woo Hyung
- 👤 Young-wook Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:24
CPC Classifications
H; H10; H10B; H10B12/00; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; C; C03; C03C; C03C23/00; C03C23/0075; H10P14/65; H10P14/6502; H10P14/6509; H10P14/6512; H10P14/6514; H10P14/6516; H10P14/6529; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/66; H10P14/662
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
133 words
A method for manufacturing a capacitor of a semiconductor memory device, comprising: (a) forming a lower electrode electrically connected to an active region of a semiconductor substrate; (b) forming a pre-treatment film on the surface of the lower electrode, the pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof; (c) forming a dielectric film on the pre-treatment film using a tantalum (Ta) precursor, comprising depositing a first dielectric layer on the pre-treatment film at a first temperature selected from a designated temperature range, and depositing a second dielectric layer on the first dielectric layer at a second temperature different from the first temperature and selected from the designated temperature range; and (d) performing a thermal treatment on the dielectric film in an oxygen atmosphere.
Claim 2
Independent Claim
133 words
A method for manufacturing a capacitor of a semiconductor memory device, comprising: (a) forming a lower electrode electrically connected to an active region of a semiconductor substrate; (b) forming a pre-treatment film on the surface of the lower electrode, the pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof; (c) forming a dielectric film on the pre-treatment film using a tantalum (Ta) precursor, comprising depositing a first dielectric layer on the pre-treatment film at a first temperature selected from a designated temperature range, and depositing a second dielectric layer on the first dielectric layer at a second temperature different from the first temperature and selected from the designated temperature range; and (d) performing a thermal treatment on the dielectric film in an oxygen atmosphere.
Claim 3
Dependent Claim
45 words
The method of claim 1 , wherein, in the step (a), the lower electrode is formed of one selected from a group consisting of a polysilicon film, a metal film, a metal oxide film, a metal nitride film, a metal oxynitride film and combinations thereof.
Claim 4
Dependent Claim
44 words
The method of claim 1 , wherein, in the step (b), the pre-treatment film is formed by one of a group consisting of a rapid thermal nitridation (RTN) method, a rapid thermal oxidation (RTO) method, a chemical vapor deposition (CVD) method, and combinations thereof.
Claim 5
Dependent Claim
23 words
The method of claim 3 , wherein, in the step (b), further comprising a step of supplying plasma while forming the pre-treatment film.
Claim 6
Dependent Claim
27 words
The method of claim 3 , wherein, in the step (b), further comprising a step of irradiating with ultra violet (UV) radiation while forming the pre-treatment film.
Claim 7
Dependent Claim
20 words
The method of claim 1 , wherein, in the step (c), the designated temperature range is 350 to 550° C.
Claim 8
Dependent Claim
20 words
The method of claim 1 , wherein, in the step (c), the second temperature is lower than the first temperature.
Claim 9
Dependent Claim
20 words
The method of claim 1 , wherein, in the step (c), the second temperature is higher than the first temperature.
Claim 10
Dependent Claim
29 words
The method of claim 1 , wherein, in the step (c), the forming of the dielectric film is performed at a pressure of between 100 mTorr and atmospheric pressure.
Claim 11
Dependent Claim
31 words
The method of claim 1 , wherein in the step (c), the Ta precursor is one selected from a group consisting of metal alkoxides, organic metals, metal halides, and mixtures thereof.
Claim 12
Dependent Claim
23 words
The method of claim 1 , wherein, in the step (c), further comprising a step of supplying plasma while forming the dielectric film.
Claim 13
Dependent Claim
27 words
The method of claim 1 , wherein, in the step (c), further comprising a step of irradiating with ultra violet (UV) radiation while forming the dielectric film.
Claim 14
Dependent Claim
25 words
The method of claim 1 , wherein, in the step (c), the forming of the dielectric film is performed in a single wafer type reactor.
Claim 15
Dependent Claim
24 words
The method of claim 1 , wherein, in the step (c), the forming of the dielectric film is performed in a batch type reactor.
Claim 16
Dependent Claim
21 words
The method of claim 1 , wherein, in the step (d), the thermal treatment is performed at 650 to 800° C.
Claim 17
Dependent Claim
38 words
The method of claim 1 , wherein, in the step (d), the thermal treatment is performed in a gas atmosphere selected from a group consisting of O 2 , O 3 , N 2 O and mixtures thereof.
Claim 18
Dependent Claim
23 words
The method of claim 1 , wherein, in the step (d), further comprising a step of supplying plasma while performing the thermal treatment.
Claim 19
Dependent Claim
27 words
The method of claim 1 , wherein, in the step (d), further comprising a step of irradiating with ultra violet (UV) radiation while performing the thermal treatment.
Claim 20
Dependent Claim
33 words
The method of claim 1 , after the step (b) and before the step (c), further comprising a step of flowing the Ta precursor over the lower electrode covered with the pre-treatment film.
Claim 21
Dependent Claim
27 words
The method of claim 17 , wherein the Ta precursor is one selected from a group consisting of metal alkoxides, organic metals, metal halides, and combinations thereof.
Claim 22
Dependent Claim
39 words
The method of claim 1 , wherein, in the step (c), further comprising performing a thermal treatment on the first dielectric layer in an oxygen atmosphere after forming the first dielectric layer and before forming the second dielectric layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |