US6362086B2
Expired / Lapsed
US
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Forming a conductive structure in a semiconductor device
Assignee: Micron Technology Inc
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Filing: 1999-09-15
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Granted: 2002-03-26
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Expires: 2019-09-15
Abstract
Abstract A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal suicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multilayer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.
Inventors
- 👤 Ronald A. Weimer
- 👤 Yongjun Jeff Hu
- 👤 Pai Hung Pan
- 👤 Deepa Ratakonda
- 👤 James Beck
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/01314; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
68 words
A method of forming a multi-layer conductive structure in a semiconductor device, the method comprising: forming a first layer containing silicon; depositing a metal layer over the first layer; and annealing the metal layer in an ambient having a composition selected from a group consisting of nitrogen, NH 3 , and hydrazine, wherein a second layer containing metal silicide nitride is formed over the first layer after annealing.
Claim 2
Independent Claim
68 words
A method of forming a multi-layer conductive structure in a semiconductor device, the method comprising: forming a first layer containing silicon; depositing a metal layer over the first layer; and annealing the metal layer in an ambient having a composition selected from a group consisting of nitrogen, NH 3 , and hydrazine, wherein a second layer containing metal silicide nitride is formed over the first layer after annealing.
Claim 3
Independent Claim
75 words
A method of forming a multi-layer conductive structure in a semiconductor device, the method comprising: forming a first layer containing silicon; depositing a metal layer over the first layer; annealing the metal layer in an ambient having a composition selected from a group consisting of nitrogen, NH 3 , and hydrazine, wherein a second layer containing silicide is formed over the first layer after annealing; and forming a top conductive layer over the second layer.
Claim 4
Independent Claim
75 words
A method of forming a multi-layer conductive structure in a semiconductor device, the method comprising: forming a first layer containing silicon; depositing a metal layer over the first layer; annealing the metal layer in an ambient having a composition selected from a group consisting of nitrogen, NH 3 , and hydrazine, wherein a second layer containing silicide is formed over the first layer after annealing; and forming a top conductive layer over the second layer.
Claim 5
Dependent Claim
21 words
The method of claim 2 , wherein the first layer, second layer, and top conductive layer form the multi-layer conductive structure.
Claim 6
Independent Claim
74 words
A method of forming a conductive structure in a semiconductor device, the method comprising: forming a lower electrically conductive layer on a support surface; forming an electrically conductive barrier layer over the lower layer, the barrier layer containing metal silicide nitride, MSixNy, wherein x is greater than about 2 and y ranges between about 0.1 and 0.9; and forming an upper conductive layer over the barrier layer, the upper conductive layer including metal silicide.
Claim 7
Independent Claim
74 words
A method of forming a conductive structure in a semiconductor device, the method comprising: forming a lower electrically conductive layer on a support surface; forming an electrically conductive barrier layer over the lower layer, the barrier layer containing metal silicide nitride, MSixNy, wherein x is greater than about 2 and y ranges between about 0.1 and 0.9; and forming an upper conductive layer over the barrier layer, the upper conductive layer including metal silicide.
Claim 8
Dependent Claim
12 words
The method of claim 4 , wherein the lower layer includes silicon.
Claim 9
Dependent Claim
24 words
The method of claim 4 , wherein the lower layer includes a material selected from the group consisting of polysilicon, SiGex, and amorphous silicon.
Claim 10
Dependent Claim
25 words
The method of claim 4 , wherein the upper conductive layer includes a material selected from the group consisting of TiSix, CoSix, NiSix, and PdSix.
Claim 11
Independent Claim
61 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first electrically conductive layer on a base; forming a barrier layer over the first layer, the barrier layer including a metal suicide composition without nitrogen and having a thickness between about 50 Å and 500 Å; and forming a second electrically conductive layer over the barrier layer.
Claim 12
Independent Claim
61 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first electrically conductive layer on a base; forming a barrier layer over the first layer, the barrier layer including a metal suicide composition without nitrogen and having a thickness between about 50 Å and 500 Å; and forming a second electrically conductive layer over the barrier layer.
Claim 13
Dependent Claim
16 words
The method of claim 8 , wherein forming the barrier layer includes using chemical vapor deposition.
Claim 14
Dependent Claim
16 words
The method of claim 8 , wherein forming the barrier layer includes using physical vapor deposition.
Claim 15
Independent Claim
82 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first electrically conductive layer on a base; forming a barrier layer over the first layer, the barrier layer including a metal silicide composition and having a thickness between about 50 Å and 500 Å; and forming a second electrically conductive layer over the barrier layer, wherein forming the barrier layer includes depositing a metal on a layer containing silicon and controlling the metal-silicon structure in a preselected ambient.
Claim 16
Independent Claim
82 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first electrically conductive layer on a base; forming a barrier layer over the first layer, the barrier layer including a metal silicide composition and having a thickness between about 50 Å and 500 Å; and forming a second electrically conductive layer over the barrier layer, wherein forming the barrier layer includes depositing a metal on a layer containing silicon and controlling the metal-silicon structure in a preselected ambient.
Claim 17
Dependent Claim
14 words
The method of claim 11 , wherein the preselected ambient includes NH 3 .
Claim 18
Dependent Claim
12 words
The method of claim 11 , wherein the preselected ambient includes hydrazine.
Claim 19
Dependent Claim
12 words
The method of claim 11 , wherein the preselected ambient includes nitrogen.
Claim 20
Dependent Claim
47 words
The method of claim 4 , wherein forming the barrier layer comprises forming a barrier layer containing a material selected from the group consisting of tungsten silicide nitride, titanium silicide nitride, tantalum silicide nitride, molybdenum silicide nitride, hafnium silicide nitride, zirconium silicide nitride, and niobium silicide nitride.
Claim 21
Independent Claim
89 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first electrically conductive layer on a base; forming a barrier layer over the first layer, the barrier layer including a metal suicide composition and having a thickness between about 50 Å and 500 Å; and forming a second electrically conductive layer over the barrier layer, wherein forming the barrier layer comprises forming a barrier layer containing a material selected from the group consisting of tungsten silicide, tantalum silicide, molybdenum silicide, hafnium silicide, and niobium silicide.
Claim 22
Independent Claim
89 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first electrically conductive layer on a base; forming a barrier layer over the first layer, the barrier layer including a metal suicide composition and having a thickness between about 50 Å and 500 Å; and forming a second electrically conductive layer over the barrier layer, wherein forming the barrier layer comprises forming a barrier layer containing a material selected from the group consisting of tungsten silicide, tantalum silicide, molybdenum silicide, hafnium silicide, and niobium silicide.
Claim 23
Independent Claim
76 words
A method of making a semiconductor device, the method comprising: forming a gate structure of a transistor, wherein forming the gate structure comprises: forming a lower electrically conductive layer on a support surface, forming an electrically conductive barrier layer over the lower layer, the barrier layer containing metal silicide nitride, MSixNy, where x is greater than about 2 and y ranges between about 0.1 and 0.9, and forming an upper conductive layer over the barrier layer.
Claim 24
Independent Claim
76 words
A method of making a semiconductor device, the method comprising: forming a gate structure of a transistor, wherein forming the gate structure comprises: forming a lower electrically conductive layer on a support surface, forming an electrically conductive barrier layer over the lower layer, the barrier layer containing metal silicide nitride, MSixNy, where x is greater than about 2 and y ranges between about 0.1 and 0.9, and forming an upper conductive layer over the barrier layer.
Claim 25
Dependent Claim
18 words
The method of claim 17 , wherein forming the upper layer comprises forming a layer containing metal silicide.
Claim 26
Independent Claim
73 words
A method of forming a multi-layer conductive structure in a semiconductor device, comprising: forming a first layer containing silicon; forming a barrier layer containing metal silicide nitride over the first layer by depositing a metal layer over the first layer and annealing the metal layer in an ambient having a composition selected from the group consisting of nitrogen, NH 3 , and hydrazine; and forming an upper conductive layer over the barrier layer.
Claim 27
Independent Claim
73 words
A method of forming a multi-layer conductive structure in a semiconductor device, comprising: forming a first layer containing silicon; forming a barrier layer containing metal silicide nitride over the first layer by depositing a metal layer over the first layer and annealing the metal layer in an ambient having a composition selected from the group consisting of nitrogen, NH 3 , and hydrazine; and forming an upper conductive layer over the barrier layer.
Claim 28
Dependent Claim
34 words
The method of claim 19 , further comprising forming a gate structure of a transistor that comprises the acts of forming the first layer, forming the barrier layer, and forming an upper conductive layer.
Claim 29
Independent Claim
68 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first layer containing silicon; forming a barrier layer over the first layer by depositing a metal layer over the first layer and annealing the metal layer in an ambient having a composition selected from the group consisting of nitrogen, NH 3 , and hydrazine; and forming an upper conductive layer over the barrier layer.
Claim 30
Independent Claim
68 words
A method of forming a conductive structure in a semiconductor device, comprising: forming a first layer containing silicon; forming a barrier layer over the first layer by depositing a metal layer over the first layer and annealing the metal layer in an ambient having a composition selected from the group consisting of nitrogen, NH 3 , and hydrazine; and forming an upper conductive layer over the barrier layer.
Claim 31
Independent Claim
83 words
A method of forming a semiconductor device, comprising: forming a gate structure of a transistor, the gate structure having lower and upper electrically conductive layers and a barrier layer between the lower and upper electrically conductive layers; forming the barrier layer to consist essentially of a metal silicide selected from the group consisting of tantalum silicide, molybdenum silicide, hafnium silicide, and niobium silicide; and forming the upper electrically conductive layer to have a nickel silicide, NiSin, where n is at least about one.
Claim 32
Independent Claim
83 words
A method of forming a semiconductor device, comprising: forming a gate structure of a transistor, the gate structure having lower and upper electrically conductive layers and a barrier layer between the lower and upper electrically conductive layers; forming the barrier layer to consist essentially of a metal silicide selected from the group consisting of tantalum silicide, molybdenum silicide, hafnium silicide, and niobium silicide; and forming the upper electrically conductive layer to have a nickel silicide, NiSin, where n is at least about one.
Claim 33
Dependent Claim
32 words
The method of claim 4 , wherein forming the upper conductive layer including metal silicide comprises forming the upper conductive layer including metal silicide, MSin, where n is at least about one.
Claim 34
Dependent Claim
35 words
The method of claim 4 , wherein forming the upper conductive layer including metal silicide comprises forming the upper conductive layer including metal silicide, MSin, where n is greater than or equal to about 2.
Claim 35
Dependent Claim
29 words
The method of claim 4 , wherein forming the barrier layer comprises forming a barrier layer having metal silicide nitride, MSixNy, where y ranges between about 0.5 and 0.6.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-03-25 | 2005-09-24 | 2006-03-26 | $2000.00 | Window Closed / Lapsed |
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