US5939758A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with gate electrodes having conductive films
Assignee: Renesas Electronics Corp
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Filing: 1997-05-23
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Granted: 1999-08-17
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Expires: 2017-05-23
Abstract
Abstract First and second gate electrodes are formed spaced from each other on a semiconductor substrate. A pair of impurity diffusion layers are provided on both sides of the first gate electrode at the surface of the semiconductor substrate. The first gate electrode includes a first lower conductive film, a first protective conductive film provided on the first lower conductive film, and a first upper conductive film provided on the first protective conductive film. The second gate electrode includes a second lower conductive film, a second protective conductive film provided on the second lower conductive film, and a second upper conductive film provided on the second protective conductive film. The second upper conductive film extends to be in contact with one of the pair of impurity diffusion layers.
Inventors
- 👤 Satoshi Arima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10D64/667; H10D64/668; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
143 words
A semiconductor device, comprising: a semiconductor substrate: first and second gate electrodes formed spaced from each other on said semiconductor substrate; and a pair of impurity diffusion layers formed on both sides of said first gate electrode at a surface of said semiconductor substrate; wherein said first gate electrode includes a first lower conductive film comprising a first conductive material, a first intermediate conductive film provided on said first lower conductive film and an upper conductive film comprising the first conductive material provided on said first intermediate conductive film, said second gate electrode includes a second lower conductive film, a second intermediate conductive film provided on said second lower conductive film, and a second upper conductive film formed on said second intermediate film, and said second upper conductive film extends to be in contact with one of said pair of impurity diffusion layers.
Claim 2
Dependent Claim
143 words
A semiconductor device, comprising: a semiconductor substrate: first and second gate electrodes formed spaced from each other on said semiconductor substrate; and a pair of impurity diffusion layers formed on both sides of said first gate electrode at a surface of said semiconductor substrate; wherein said first gate electrode includes a first lower conductive film comprising a first conductive material, a first intermediate conductive film provided on said first lower conductive film and an upper conductive film comprising the first conductive material provided on said first intermediate conductive film, said second gate electrode includes a second lower conductive film, a second intermediate conductive film provided on said second lower conductive film, and a second upper conductive film formed on said second intermediate film, and said second upper conductive film extends to be in contact with one of said pair of impurity diffusion layers.
Claim 3
Dependent Claim
61 words
The semiconductor device according to claim 1, further comprising a gate oxide film provide between said first gate electrode and said semiconductor substrate; wherein an end portion of said gate oxide film and an end portion of said extended portion of said second upper conductive film which is in contact with said impurity diffusion layer are formed spaced from each other.
Claim 4
Dependent Claim
29 words
The semiconductor device according to claim 1, wherein a metal silicide film is further provided on each of said first upper conductive film and said second upper conductive film.
Claim 5
Dependent Claim
28 words
The semiconductor device according to claim 1, wherein said first and second intermediate conductive films are formed of a metal silicide film or a film of refractory metal.
Claim 6
Dependent Claim
14 words
The semiconductor device according to claim 1, wherein the first conductive material is polysilicon.
References Cited (Backward Citations)
US4855245A
Cited
US5221853A
Cited
JPH03129725A
Cited
US5059554A
Cited
US5483104A
Cited
US5656861A
Cited
US5241207A
Cited
JPH0653234A
Cited
US5654575A
Cited
JPH0855852A
Cited
US5801427A
Cited
US5723893A
Cited
US5703391A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-08-16 | 2003-02-15 | 2003-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-16 | 2007-02-15 | 2007-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-16 | 2011-02-15 | 2011-08-17 | $7700.00 | Window Closed / Lapsed |