US5723893A
Expired / Lapsed
US
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Method for fabricating double silicide gate electrode structures on CMOS-field effect transistors
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-05-28
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Granted: 1998-03-03
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Expires: 2016-05-28
Abstract
Abstract A method is described for fabricating field effect transistors (FETs) having double silicide gate electrodes and interconnecting lines for CMOS circuits. The method reduces the IR voltage drops and RC time delay constants, and thereby improves circuit performance. The method consists of forming FETs having gate electrodes and interconnecting lines from a multilayer made up of a doped first polysilicon layer, a first silicide layer (WSi 2 ), and a doped second polysilicon layer. After patterning the multilayer to form the gate electrodes, a titanium (Ti) metal is deposited and annealed to form a second silicide layer on the gate electrodes, and simultaneously forms self-aligned Ti silicide contacts on the source/drain areas. The latitude in overetching the contact openings in an insulating (PMD) layer to the gate electrodes extending over the field oxide area is increased, and the contact resistance (R c ) is reduced because of the presence of the WSi 2 below the contact openings, even if the Ti silicide is completely removed during the contact etching.
Inventors
- 👤 Douglas Chen-Hua Yu
- 👤 Pin-Nan Tseng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:59
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
261 words
A method for fabricating field effect transistor devices having a double silicide gate electrode comprising the steps of: providing a semiconductor substrate doped with a conductive type dopant; forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; forming a gate oxide layer on said device areas; depositing a first polysilicon layer on said device areas and elsewhere on said field oxide areas; depositing a first silicide layer on said first polysilicon layer; depositing a second polysilicon layer on said first silicide layer; patterning said second polysilicon layer, said first silicide layer, and said first polysilicon layer by photoresist masking and anisotropic plasma etching thereby forming gate electrodes on said device areas and interconnecting lines on said field oxide areas; forming lightly doped source/drain areas in said device areas adjacent to said gate electrodes by ion implantation; forming insulating sidewall spacers upon the sidewalls of said gate electrodes; forming heavily doped source/drain contact areas in said device areas adjacent to said insulating sidewall spacers by ion implantation; depositing a conformal refractory metal layer on said substrate over said gate electrodes, said device areas, and said field oxide areas; annealing said refractory metal layer and thereby forming a second silicide layer comprised in part of said second polysilicon layer on said gate electrodes and elsewhere on said interconnecting lines and concurrently forming said second silicide layer on said source/drain contact areas; selectively etching said remaining refractory metal layer and thereby completing said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas.
Claim 2
Independent Claim
261 words
A method for fabricating field effect transistor devices having a double silicide gate electrode comprising the steps of: providing a semiconductor substrate doped with a conductive type dopant; forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; forming a gate oxide layer on said device areas; depositing a first polysilicon layer on said device areas and elsewhere on said field oxide areas; depositing a first silicide layer on said first polysilicon layer; depositing a second polysilicon layer on said first silicide layer; patterning said second polysilicon layer, said first silicide layer, and said first polysilicon layer by photoresist masking and anisotropic plasma etching thereby forming gate electrodes on said device areas and interconnecting lines on said field oxide areas; forming lightly doped source/drain areas in said device areas adjacent to said gate electrodes by ion implantation; forming insulating sidewall spacers upon the sidewalls of said gate electrodes; forming heavily doped source/drain contact areas in said device areas adjacent to said insulating sidewall spacers by ion implantation; depositing a conformal refractory metal layer on said substrate over said gate electrodes, said device areas, and said field oxide areas; annealing said refractory metal layer and thereby forming a second silicide layer comprised in part of said second polysilicon layer on said gate electrodes and elsewhere on said interconnecting lines and concurrently forming said second silicide layer on said source/drain contact areas; selectively etching said remaining refractory metal layer and thereby completing said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas.
Claim 3
Dependent Claim
17 words
The method of claim 1, where said first and second polysilicon layers are doped with N-type dopant.
Claim 4
Dependent Claim
20 words
The method of claim 1, wherein the thickness of said first polysilicon layer is between about 800 and 2000 Angstroms.
Claim 5
Dependent Claim
24 words
The method of claim 1, wherein said first silicide layer is composed of tungsten silicide having a thickness between about 800 and 2000 Angstroms.
Claim 6
Dependent Claim
19 words
The method of claim 1, wherein said second polysilicon layer has a thickness between about 300 and 1000 Angstroms.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein said refractory metal layer is titanium having a thickness between about 300 and 800 Angstroms.
Claim 8
Dependent Claim
34 words
The method of claim 1, wherein said refractory metal layer is annealed in nitrogen at a temperature between about 600° and 800 ° C. for a time of between about 30 and 90 seconds.
Claim 9
Dependent Claim
29 words
The method of claim 1, wherein both P and N doped source/drain field effect transistor devices are formed on said substrate to provide CMOS field effect transistor circuit capability.
Claim 10
Independent Claim
278 words
A method for fabricating field effect transistor devices having a double silicide gate electrode comprising the steps of: providing a semiconductor substrate doped with a conductive type dopant; forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; forming a gate oxide layer on said device areas; depositing a first polysilicon layer on said device areas and elsewhere on said field oxide areas; depositing a first silicide layer on said first polysilicon layer wherein said silicide layer is composed of tungsten silicide; depositing a second polysilicon layer on said first silicide layer; patterning said second polysilicon layer, said first silicide layer, and said first polysilicon layer by photoresist masking and anisotropic plasma etching thereby forming gate electrodes on said device areas and interconnecting lines on said field oxide areas; forming lightly doped source/drain areas in said device areas adjacent to said gate electrodes by ion implantation; forming insulating sidewall spacers upon the sidewalls of said gate electrodes; forming heavily doped source/drain contact areas in said device areas; adjacent to said insulating sidewall spacers by ion implantation; depositing a conformal refractory metal layer on said substrate over said gate electrodes, said device areas, and said field oxide areas, said refractory metal layer being composed of titanium; annealing said refractory metal layer and thereby forming a second silicide layer comprised in part of said second polysilicon layer on said gate electrodes and elsewhere on said interconnecting lines and concurrently forming said second silicide layer on said source/drain contact areas; selectively etching said remaining refractory metal layer and thereby completing said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas.
Claim 11
Independent Claim
278 words
A method for fabricating field effect transistor devices having a double silicide gate electrode comprising the steps of: providing a semiconductor substrate doped with a conductive type dopant; forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; forming a gate oxide layer on said device areas; depositing a first polysilicon layer on said device areas and elsewhere on said field oxide areas; depositing a first silicide layer on said first polysilicon layer wherein said silicide layer is composed of tungsten silicide; depositing a second polysilicon layer on said first silicide layer; patterning said second polysilicon layer, said first silicide layer, and said first polysilicon layer by photoresist masking and anisotropic plasma etching thereby forming gate electrodes on said device areas and interconnecting lines on said field oxide areas; forming lightly doped source/drain areas in said device areas adjacent to said gate electrodes by ion implantation; forming insulating sidewall spacers upon the sidewalls of said gate electrodes; forming heavily doped source/drain contact areas in said device areas; adjacent to said insulating sidewall spacers by ion implantation; depositing a conformal refractory metal layer on said substrate over said gate electrodes, said device areas, and said field oxide areas, said refractory metal layer being composed of titanium; annealing said refractory metal layer and thereby forming a second silicide layer comprised in part of said second polysilicon layer on said gate electrodes and elsewhere on said interconnecting lines and concurrently forming said second silicide layer on said source/drain contact areas; selectively etching said remaining refractory metal layer and thereby completing said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas.
Claim 12
Dependent Claim
17 words
The method of claim 9, where said first and second polysilicon layers are doped with N-type dopant.
Claim 13
Dependent Claim
20 words
The method of claim 9, wherein the thickness of said first polysilicon layer is between about 800 and 2000 Angstroms.
Claim 14
Dependent Claim
18 words
The method of claim 9, wherein said tungsten silicide has a thickness between about 800 and 2000 Angstroms.
Claim 15
Dependent Claim
19 words
The method of claim 9, wherein said second polysilicon layer has a thickness between about 300 and 1000 Angstroms.
Claim 16
Dependent Claim
17 words
The method of claim 9, wherein said titanium has a thickness between about 300 and 800 Angstroms.
Claim 17
Dependent Claim
33 words
The method of claim 9, wherein said refractory metal layer is annealed in nitrogen at a temperature between about 600° and 800° C. for a time of between about 30 and 90 seconds.
Claim 18
Dependent Claim
29 words
The method of claim 9, wherein both P and N doped source/drain field effect transistor devices are formed on said substrate to provide CMOS field effect transistor circuit capability.
Claim 19
Independent Claim
292 words
A method for fabricating field effect transistor integrated circuit devices having a double silicide gate electrode comprising the steps of: providing a semiconductor substrate doped with a conductive type dopant; forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; forming a gate oxide layer on said device areas; depositing a first polysilicon layer on said device areas and elsewhere on said field oxide areas; depositing a first silicide layer on said first polysilicon layer; depositing a second polysilicon layer on said first silicide layer; patterning said second polysilicon layer, said first silicide layer, and said first polysilicon layer by photoresist masking and anisotropic plasma etching thereby forming gate electrodes on said device areas and interconnecting lines on said field oxide areas; forming lightly doped source/drain areas in said device areas adjacent to said gate electrodes by ion implantation; forming insulating sidewall spacers upon the sidewalls of said gate electrodes; forming heavily doped source/drain contact areas in said device areas adjacent to said insulating sidewall spacers by ion implantation; depositing a conformal refractory metal layer on said substrate over said gate electrodes, said device areas, and said field oxide areas; annealing said refractory metal layer and thereby forming a second silicide layer comprised in part of said second polysilicon layer on said gate electrodes and elsewhere on said interconnecting lines and concurrently forming said second silicide layer on said source/drain contact areas; selectively etching said remaining refractory metal layer and thereby forming said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas; depositing a passivation layer over said field effect transistors and providing desired electrical connections to said gate electrodes and said source/drain contact areas to complete said integrated circuit devices.
Claim 20
Independent Claim
292 words
A method for fabricating field effect transistor integrated circuit devices having a double silicide gate electrode comprising the steps of: providing a semiconductor substrate doped with a conductive type dopant; forming field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; forming a gate oxide layer on said device areas; depositing a first polysilicon layer on said device areas and elsewhere on said field oxide areas; depositing a first silicide layer on said first polysilicon layer; depositing a second polysilicon layer on said first silicide layer; patterning said second polysilicon layer, said first silicide layer, and said first polysilicon layer by photoresist masking and anisotropic plasma etching thereby forming gate electrodes on said device areas and interconnecting lines on said field oxide areas; forming lightly doped source/drain areas in said device areas adjacent to said gate electrodes by ion implantation; forming insulating sidewall spacers upon the sidewalls of said gate electrodes; forming heavily doped source/drain contact areas in said device areas adjacent to said insulating sidewall spacers by ion implantation; depositing a conformal refractory metal layer on said substrate over said gate electrodes, said device areas, and said field oxide areas; annealing said refractory metal layer and thereby forming a second silicide layer comprised in part of said second polysilicon layer on said gate electrodes and elsewhere on said interconnecting lines and concurrently forming said second silicide layer on said source/drain contact areas; selectively etching said remaining refractory metal layer and thereby forming said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas; depositing a passivation layer over said field effect transistors and providing desired electrical connections to said gate electrodes and said source/drain contact areas to complete said integrated circuit devices.
Claim 21
Dependent Claim
17 words
The method of claim 17, where said first and second polysilicon layers are doped with N-type dopant.
Claim 22
Dependent Claim
20 words
The method of claim 17, wherein the thickness of said first polysilicon layer is between about 800 and 2000 Angstroms.
Claim 23
Dependent Claim
18 words
The method of claim 17, wherein said tungsten silicide has a thickness between about 800 and 2000 Angstroms.
Claim 24
Dependent Claim
19 words
The method of claim 17, wherein said second polysilicon layer has a thickness between about 300 and 1000 Angstroms.
Claim 25
Dependent Claim
17 words
The method of claim 17, wherein said titanium has a thickness between about 300 and 800 Angstroms.
Claim 26
Dependent Claim
34 words
The method of claim 17, wherein said refractory metal layer is annealed in nitrogen at a temperature between about 600° and 800 ° C. for a time of between about 30 and 90 seconds.
Claim 27
Dependent Claim
29 words
The method of claim 17, wherein both P and N doped source/drain field effect transistor devices are formed on said substrate to provide CMOS field effect transistor circuit capability.
Claim 28
Dependent Claim
126 words
A field effect transistor device with a double silicide gate electrode comprising of: a semiconductor substrate doped with a conductive type dopant; field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; a gate oxide layer on said device areas; a gate electrode and interconnecting lines patterned from a first polysilicon layer, a first silicide layer, a second polysilicon layer, and a second silicide layer; said gate electrode having lightly doped source/drain areas adjacent to said gate electrodes and having insulating sidewall spacers thereon; heavily doped source/drain contact areas with said second silicide layer in said device areas adjacent to said insulating sidewall spacers thereby providing said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas.
Claim 29
Dependent Claim
126 words
A field effect transistor device with a double silicide gate electrode comprising of: a semiconductor substrate doped with a conductive type dopant; field oxide areas on said semiconductor substrate surrounding and electrically isolating device areas; a gate oxide layer on said device areas; a gate electrode and interconnecting lines patterned from a first polysilicon layer, a first silicide layer, a second polysilicon layer, and a second silicide layer; said gate electrode having lightly doped source/drain areas adjacent to said gate electrodes and having insulating sidewall spacers thereon; heavily doped source/drain contact areas with said second silicide layer in said device areas adjacent to said insulating sidewall spacers thereby providing said field effect transistors having said double silicide gate electrodes and self-aligned silicided source drain contact areas.
Claim 30
Dependent Claim
16 words
The structure of claim 25, wherein said first silicide layer is tungsten silicide (WSi 2 ).
Claim 31
Dependent Claim
16 words
The structure of claim 25, wherein said second silicide layer is titanium silicide (TiSi 2 ).
Claim 32
Dependent Claim
29 words
The structure of claim 25, wherein said titanium silicide is formed on said gate electrodes and on and in said source/drain contact areas by depositing titanium and thermal annealing.
Claim 33
Dependent Claim
29 words
The structure of claim 25, wherein both P and N doped source/drain field effect transistor devices are formed on said substrate to provide CMOS field effect transistor circuit capability.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-02 | 2001-09-01 | 2002-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-02 | 2005-09-01 | 2006-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-02 | 2009-09-01 | 2010-03-03 | $7700.00 | Window Closed / Lapsed |