US6037273A
Expired / Lapsed
US
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Method and apparatus for insitu vapor generation
Assignee: Applied Materials Inc
•
Filing: 1998-03-02
•
Granted: 2000-03-14
•
Expires: 2018-03-02
Abstract
Abstract A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.
Inventors
- 👤 Christian M. Gronet
- 👤 Peter A. Knoot
- 👤 Gary E. Miner
- 👤 Guangcai Xing
- 👤 David R. Lopes
- 👤 Satheesh Kuppurao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; C; C01; C01B; C01B13/00; C01B13/14; C01B13/32; C01B13/322; H10P14/6322
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
99 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; reacting said oxygen containing gas and said hydrogen containing gas in said Chamber near said substrate to form water vapor (H 2 O) in said chamber wherein the combined partial pressure of said oxygen containing gas and said hydrogen containing gas is less than atmospheric pressure prior to reacting said oxygen containing gas and said hydrogen containing gas; and oxidizing said substrate with said water.
Claim 2
Independent Claim
99 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; reacting said oxygen containing gas and said hydrogen containing gas in said Chamber near said substrate to form water vapor (H 2 O) in said chamber wherein the combined partial pressure of said oxygen containing gas and said hydrogen containing gas is less than atmospheric pressure prior to reacting said oxygen containing gas and said hydrogen containing gas; and oxidizing said substrate with said water.
Claim 3
Dependent Claim
31 words
The method of claim 1 further comprising the step of: heating said substrate to a temperature sufficient to initiate said reaction between said oxygen containing gas and said hydrogen containing gas.
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein said substrate is heated to a temperature of at least 600° C.
Claim 5
Dependent Claim
31 words
The method of claim 3 wherein the combined partial pressure of said hydrogen containing gas and said oxygen containing gas is less than or equal to 150 torr during said reaction.
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein said oxygen containing gas is oxygen (O 2 ).
Claim 7
Dependent Claim
16 words
The method of claim 1 wherein said oxygen containing gas is nitrous oxide (N 2 O).
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said hydrogen containing gas is a hydrocarbon.
Claim 9
Dependent Claim
16 words
The method of claim 1 wherein said hydrogen containing gas is hydrogen gas (H 2 ).
Claim 10
Dependent Claim
15 words
The method of claim 1 wherein said hydrogen containing gas is ammonia (NH 3 ).
Claim 11
Dependent Claim
13 words
The method of claim 1 wherein said hydrogen containing gas is a deuterium.
Claim 12
Independent Claim
101 words
A method of forming an oxide, said method comprising the steps of: placing a substrate having a silicon film in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; heating said substrate to a temperature sufficient to cause a reaction between said hydrogen containing gas and said oxygen containing gas; reacting said oxygen containing gas and said hydrogen containing gas in said chamber to form water vapor (H 2 O) wherein said reaction is initiated by said heated substrate; and oxidizing said silicon film with said water vapor to form said oxide.
Claim 13
Independent Claim
101 words
A method of forming an oxide, said method comprising the steps of: placing a substrate having a silicon film in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; heating said substrate to a temperature sufficient to cause a reaction between said hydrogen containing gas and said oxygen containing gas; reacting said oxygen containing gas and said hydrogen containing gas in said chamber to form water vapor (H 2 O) wherein said reaction is initiated by said heated substrate; and oxidizing said silicon film with said water vapor to form said oxide.
Claim 14
Dependent Claim
45 words
The method of claim 11 further comprising the step of generating a combined partial pressure of said oxygen containing gas and said hydrogen containing gas in said chamber of less than one atmosphere prior to reacting said oxygen containing gas and said hydrogen containing gas.
Claim 15
Dependent Claim
31 words
The method of claim 12 wherein the combined partial pressure of said hydrogen containing gas and said oxygen containing gas is less than or equal to 150 torr during said reaction.
Claim 16
Dependent Claim
20 words
The method of claim 11 wherein said heating step heats said substrate to a temperature of at least 600° C.
Claim 17
Independent Claim
104 words
A method of forming an oxide, said method comprising the steps of: placing a substrate having a silicon film in a reaction chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; generating a combined partial pressure of said oxygen containing gas and said hydrogen containing gas of less than one atmosphere; heating said substrate; reacting said oxygen containing gas and said hydrogen containing gas in said chamber to form water vapor (H 2 O), wherein said reaction is initiated by said heated substrate; and oxidizing said silicon film with said water vapor to form said oxide.
Claim 18
Independent Claim
104 words
A method of forming an oxide, said method comprising the steps of: placing a substrate having a silicon film in a reaction chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; generating a combined partial pressure of said oxygen containing gas and said hydrogen containing gas of less than one atmosphere; heating said substrate; reacting said oxygen containing gas and said hydrogen containing gas in said chamber to form water vapor (H 2 O), wherein said reaction is initiated by said heated substrate; and oxidizing said silicon film with said water vapor to form said oxide.
Claim 19
Dependent Claim
31 words
The method of claim 15 wherein said combined partial pressure is less than or equal to 150 torr while reacting said oxygen containing gas and said hydrogen gas (H 2 ).
Claim 20
Dependent Claim
18 words
The method of claim 15 wherein said wafer is heated to a temperature of at least 600° C.
Claim 21
Independent Claim
138 words
A method of growing an oxide layer in a rapid thermal processor, said method comprising the steps of: placing a silicon wafer having a silicon film in a reaction chamber of said rapid thermal processor; heating said substrate to a temperature greater than or equal to 600° C.; providing oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; generating a combined partial pressure of said oxygen containing gas and said hydrogen containing gas of less than or equal to 150 torr in said chamber; reacting said oxygen gas and said hydrogen gas in said chamber to form water vapor (H 2 O) in said chamber, wherein said reaction is initiated near said heated substrate; and oxidizing said silicon film and said silicon wafer with said water vapor (H 2 O).
Claim 22
Independent Claim
138 words
A method of growing an oxide layer in a rapid thermal processor, said method comprising the steps of: placing a silicon wafer having a silicon film in a reaction chamber of said rapid thermal processor; heating said substrate to a temperature greater than or equal to 600° C.; providing oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; generating a combined partial pressure of said oxygen containing gas and said hydrogen containing gas of less than or equal to 150 torr in said chamber; reacting said oxygen gas and said hydrogen gas in said chamber to form water vapor (H 2 O) in said chamber, wherein said reaction is initiated near said heated substrate; and oxidizing said silicon film and said silicon wafer with said water vapor (H 2 O).
Claim 23
Independent Claim
98 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; reacting said oxygen containing gas with said hydrogen containing gas in said chamber near the surface of said substrate to form an ambient wherein said oxygen containing gas and said hydrogen containing gas have a combined partial pressure of between 1 torr and 50 torr prior to reacting said oxygen containing gas and said hydrogen containing gas; and oxidizing said substrate with said ambient.
Claim 24
Independent Claim
98 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; reacting said oxygen containing gas with said hydrogen containing gas in said chamber near the surface of said substrate to form an ambient wherein said oxygen containing gas and said hydrogen containing gas have a combined partial pressure of between 1 torr and 50 torr prior to reacting said oxygen containing gas and said hydrogen containing gas; and oxidizing said substrate with said ambient.
Claim 25
Independent Claim
86 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; generating a combined partial pressure of said oxygen containing gas and said hydrogen containing gas in said chamber is between 5-15 Torr; reacting said oxygen containing gas with said hydrogen containing gas in said chamber near the surface of said substrate to form an ambient; and oxidizing said substrate with said ambient.
Claim 26
Independent Claim
86 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a chamber; providing an oxygen containing gas into said chamber; providing a hydrogen containing gas into said chamber; generating a combined partial pressure of said oxygen containing gas and said hydrogen containing gas in said chamber is between 5-15 Torr; reacting said oxygen containing gas with said hydrogen containing gas in said chamber near the surface of said substrate to form an ambient; and oxidizing said substrate with said ambient.
Claim 27
Independent Claim
140 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a reaction chamber; heating said substrate; providing oxygen gas (O 2 ) into said chamber and providing hydrogen gas (H 2 ) into said chamber wherein said hydrogen gas and said oxygen gas are provided in a hydrogen gas to oxygen gas ratio between 2:98 and 2:1; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form an ambient in said chamber wherein said reaction is initiated by said heated substrate wherein said oxygen containing gas and said hydrogen containing gas have a combined partial pressure of between 1 torr and 50 torr prior to reacting said oxygen containing gas and said hydrogen containing gas; and oxidizing said substrate with said ambient.
Claim 28
Independent Claim
140 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a reaction chamber; heating said substrate; providing oxygen gas (O 2 ) into said chamber and providing hydrogen gas (H 2 ) into said chamber wherein said hydrogen gas and said oxygen gas are provided in a hydrogen gas to oxygen gas ratio between 2:98 and 2:1; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form an ambient in said chamber wherein said reaction is initiated by said heated substrate wherein said oxygen containing gas and said hydrogen containing gas have a combined partial pressure of between 1 torr and 50 torr prior to reacting said oxygen containing gas and said hydrogen containing gas; and oxidizing said substrate with said ambient.
Claim 29
Independent Claim
130 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a reaction chamber; heating said substrate; providing oxygen gas (O 2 ) into said chamber and providing hydrogen gas (H 2 ) into said chamber wherein said hydrogen gas and said oxygen gas are provided in a hydrogen gas to oxygen gas ratio between 2:98 and 2:1; generating a combined partial pressure of said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) between 5-15 Torr; and reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form an ambient in said chamber wherein said reaction is initiated by said heated substrate; and oxidizing said substrate with said water vapor.
Claim 30
Independent Claim
130 words
A method of forming an oxide, said method comprising the steps of: placing a substrate in a reaction chamber; heating said substrate; providing oxygen gas (O 2 ) into said chamber and providing hydrogen gas (H 2 ) into said chamber wherein said hydrogen gas and said oxygen gas are provided in a hydrogen gas to oxygen gas ratio between 2:98 and 2:1; generating a combined partial pressure of said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) between 5-15 Torr; and reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form an ambient in said chamber wherein said reaction is initiated by said heated substrate; and oxidizing said substrate with said water vapor.
Claim 31
Dependent Claim
25 words
The method of claim 21 wherein said ratio of hydrogen gas (H 2 ) to oxygen gas (O 2 ) is between 2:98 and 1:2.
Claim 32
Dependent Claim
20 words
The method of claim 23 wherein said ratio of said hydrogen gas to said oxygen gas is approximately 33:66, respectively.
Claim 33
Independent Claim
77 words
A method of forming an oxide, said method comprising: placing a silicon substrate in a chamber; providing oxygen gas (O 2 ) into said chamber and; providing hydrogen gas (H 2 ) into said chamber; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form water vapor (H 2 O) in said chamber; and oxidizing said silicon substrate with said water vapor (H 2 O).
Claim 34
Independent Claim
77 words
A method of forming an oxide, said method comprising: placing a silicon substrate in a chamber; providing oxygen gas (O 2 ) into said chamber and; providing hydrogen gas (H 2 ) into said chamber; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form water vapor (H 2 O) in said chamber; and oxidizing said silicon substrate with said water vapor (H 2 O).
Claim 35
Independent Claim
84 words
A method of forming an oxide, said method of comprising: placing a substrate in a chamber; provide oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; heating said substrate to a temperature of at least 600° C.; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form water (H 2 O) in said chamber; and oxidizing said substrate with said water (H 2 O).
Claim 36
Independent Claim
84 words
A method of forming an oxide, said method of comprising: placing a substrate in a chamber; provide oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; heating said substrate to a temperature of at least 600° C.; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber near said substrate to form water (H 2 O) in said chamber; and oxidizing said substrate with said water (H 2 O).
Claim 37
Independent Claim
100 words
A method of oxidizing silicon, said method comprising: placing a substrate having silicon in a chamber; providing oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; heating said substrate to a temperature sufficient to cause a reaction between said hydrogen gas (H 2 ) and said oxygen gas (O 2 ); reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber to form water vapor (H 2 O) wherein said reaction is initiated by said heated substrate; and oxidizing said silicon with said water vapor.
Claim 38
Independent Claim
100 words
A method of oxidizing silicon, said method comprising: placing a substrate having silicon in a chamber; providing oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; heating said substrate to a temperature sufficient to cause a reaction between said hydrogen gas (H 2 ) and said oxygen gas (O 2 ); reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber to form water vapor (H 2 O) wherein said reaction is initiated by said heated substrate; and oxidizing said silicon with said water vapor.
Claim 39
Independent Claim
131 words
A method of forming an oxide, said method comprising: placing a substrate having silicon in a chamber; heating said substrate in said chamber to a temperature of at least 600° C.; providing oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber to form water vapor (H 2 O) wherein said reaction is initiated near said heated substrate and wherein the combined partial pressure of said oxygen (O 2 ) gas and said hydrogen (H 2 ) gas is less than atmospheric pressure prior to reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ); and oxidizing said silicon with said water vapor.
Claim 40
Independent Claim
131 words
A method of forming an oxide, said method comprising: placing a substrate having silicon in a chamber; heating said substrate in said chamber to a temperature of at least 600° C.; providing oxygen gas (O 2 ) into said chamber; providing hydrogen gas (H 2 ) into said chamber; reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ) in said chamber to form water vapor (H 2 O) wherein said reaction is initiated near said heated substrate and wherein the combined partial pressure of said oxygen (O 2 ) gas and said hydrogen (H 2 ) gas is less than atmospheric pressure prior to reacting said oxygen gas (O 2 ) and said hydrogen gas (H 2 ); and oxidizing said silicon with said water vapor.
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