Furnace for manufacturing a semiconductor device, and a method of forming a gate oxide film by utilizing the same

Claim 1

A method of manufacturing a semiconductor device by utilizing a furnace to form a gate oxide film, comprising the steps of: loading wafers into a main furnace of constant temperature, and injecting a N 2 O gas into a source furnace of constant temperature through a second gas inlet; raising the temperatures of said main furnace in a ramp-up process and resolving the N 2 O in said source furnace by raising the temperature of the source furnace in a ramp-up process; stabilizing the inside of said main furnace under N 2 gas environment; allowing the resolved N 2 O gas in said source furnace to flow into said main furnace through a connection pipe; conducting a preoxidization process in said main furnace; injecting NH 3 gas into said main furnace through a first gas inlet; conducting a main oxidization process in said main furnace under an environment of said resolved N 2 O gas and said injected NH 3 gas; conducting a purge process in said main furnace under the environment of said resolved N 2 O gas; heat treating the wafer under an N 2 gas environment; performing a ramp down process to lower the temperature of said main furnace; and unloading said wafers.

Claim 2

A method of manufacturing a semiconductor device by utilizing a furnace to form a gate oxide film, comprising the steps of: loading wafers into a main furnace of constant temperature, and injecting a N 2 O gas into a source furnace of constant temperature through a second gas inlet; raising the temperatures of said main furnace in a ramp-up process and resolving the N 2 O in said source furnace by raising the temperature of the source furnace in a ramp-up process; stabilizing the inside of said main furnace under N 2 gas environment; allowing the resolved N 2 O gas in said source furnace to flow into said main furnace through a connection pipe; conducting a preoxidization process in said main furnace; injecting NH 3 gas into said main furnace through a first gas inlet; conducting a main oxidization process in said main furnace under an environment of said resolved N 2 O gas and said injected NH 3 gas; conducting a purge process in said main furnace under the environment of said resolved N 2 O gas; heat treating the wafer under an N 2 gas environment; performing a ramp down process to lower the temperature of said main furnace; and unloading said wafers.

Claim 4

A method of forming agate oxide film by utilizing a furnace for manufacturing a semiconductor device, comprising the steps of: loading wafers into a main furnace of constant temperature, and injecting a N 2 O gas into a source furnace of constant temperature through second gas inlet; raising the temperatures of said main furnace and source furnace by performing a ramp up process for each furnace; stabilizing the inside of said main furnace under N 2 gas environment, and conducting a preoxidization process after the N 2 O gas resolved in said source furnace flows into said main furnace through a connection pipe; conducting a main oxidization process under an environment of said resolved N 2 O gas and NH 3 gas injected through a first gas inlet; conducting a purge process under the environment of said resolved N 2 O gas; and heat treating the wafer under N 2 gas environment, and thereafter, performing a ramp down process to lower the temperature of said main furnace, and unloading said wafers, wherein the ratio of the N 2 O gas flow supplied from said source furnace in the main oxidation process is 2% through 10%.

Claim 5

A method of forming agate oxide film by utilizing a furnace for manufacturing a semiconductor device, comprising the steps of: loading wafers into a main furnace of constant temperature, and injecting a N 2 O gas into a source furnace of constant temperature through second gas inlet; raising the temperatures of said main furnace and source furnace by performing a ramp up process for each furnace; stabilizing the inside of said main furnace under N 2 gas environment, and conducting a preoxidization process after the N 2 O gas resolved in said source furnace flows into said main furnace through a connection pipe; conducting a main oxidization process under an environment of said resolved N 2 O gas and NH 3 gas injected through a first gas inlet; conducting a purge process under the environment of said resolved N 2 O gas; and heat treating the wafer under N 2 gas environment, and thereafter, performing a ramp down process to lower the temperature of said main furnace, and unloading said wafers, wherein the ratio of the N 2 O gas flow supplied from said source furnace in the main oxidation process is 2% through 10%.