US5360769A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating hybrid oxides for thinner gate devices
Assignee: Micron Technology Inc
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Filing: 1992-12-17
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Granted: 1994-11-01
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Expires: 2012-12-17
Abstract
Abstract A method and system for fabricating semiconductor wafers is disclosed wherein an atomically clean, semiconductor substrate having a surface is provided in a rapid thermal processing chamber. One embodiment involves cleaning the substrate by exposing it to a first gas at a temperature substantially within the range of 850° C. to 1250° C. for approximately 10 to 60 seconds. Subsequently, a coating having a first thickness is formed superjacent the substrate surface by introducing a second gas at a temperature substantially within the range of 850° C. to 1250° C. for approximately 5 to 30 seconds in the chamber. The resultant coating, depending on the gas selected, comprises either SiO 2 or Si-F. Subsequently, the substrate having the coating is exposed to a third gas at a temperature substantially within the range of 900° C. to 1050° C. for approximately 30 minutes to one hour, thereby forming a silicon dioxide layer. The silicon dioxide layer is disposed superjacent the substrate and subjacent the coating. In one embodiment of the invention, this step is performed in a furnace. In an alternate embodiment of the present invention, a transferring device, such as a robot, is employed, using a load lock, to transfer the substrate between the RTP chamber and the furnace without exposing the substrate to atmospheric pressure.
Inventors
- 👤 Randhir P. S. Thakur
- 👤 Annette L. Martin
- 👤 Ralph E. Kauffman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:33
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01346; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6512; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10P70/00; H10P70/10; H10P70/12; H10P14/6927
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
97 words
A method for fabricating a semiconductor wafers comprising the steps of: a) providing a substantially clean substrate in an RTP (Rapid Thermal Processing) chamber, said substrate having a surface, wherein said substrate is cleaned with at least one of NF 3 , GeH 4 , and H 2 diluted with Ar-H 2 ; b) forming a coating having a first thickness superjacent said surface by introducing a first gas and radiant energy in said RTP chamber; and c) forming a silicon dioxide layer having a second thickness superjacent said surface by introducing a second gas and energy.
Claim 2
Independent Claim
97 words
A method for fabricating a semiconductor wafers comprising the steps of: a) providing a substantially clean substrate in an RTP (Rapid Thermal Processing) chamber, said substrate having a surface, wherein said substrate is cleaned with at least one of NF 3 , GeH 4 , and H 2 diluted with Ar-H 2 ; b) forming a coating having a first thickness superjacent said surface by introducing a first gas and radiant energy in said RTP chamber; and c) forming a silicon dioxide layer having a second thickness superjacent said surface by introducing a second gas and energy.
Claim 3
Dependent Claim
24 words
A method for fabricating a semiconductor wafer, according to claim 1, wherein said silicon dioxide layer is disposed between said surface and said coating.
Claim 4
Dependent Claim
19 words
A method for fabricating a semiconductor wafer, according to claim 1, wherein step c) is performed in a furnace.
Claim 5
Dependent Claim
43 words
A method for fabricating a semiconductor wafer, according to claim 3, further comprising the step of: transferring said substrate between said chamber and said furnace, in-situ, thereby employing a load lock, between said forming a coating and said forming a silicon dioxide layer.
Claim 6
Dependent Claim
20 words
A method for fabricating a semiconductor wafer, according to claim 4, wherein said transferring is performed by an automated means.
Claim 7
Dependent Claim
19 words
A method for fabricating a semiconductor wafer, according to claim 5, wherein said automated means comprises a robotic handler.
Claim 8
Dependent Claim
39 words
A method for fabricating a semiconductor wafer, according to claim 1, wherein said energy of step b) generates a temperature substantially within the range of 850° C. to 1250° C. and is applied for approximately 5 to 30 seconds.
Claim 9
Independent Claim
68 words
A method for fabricating a semiconductor wafer, comprising the steps of: providing a substantially clean substrate in a chamber, said substrate having a surface; forming a coating having a first thickness superjacent said surface by introducing a first gas and energy, said first gas comprising NF 3 ; and forming a silicon dioxide layer having a second thickness superjacent said surface by introducing a second gas and energy.
Claim 10
Independent Claim
68 words
A method for fabricating a semiconductor wafer, comprising the steps of: providing a substantially clean substrate in a chamber, said substrate having a surface; forming a coating having a first thickness superjacent said surface by introducing a first gas and energy, said first gas comprising NF 3 ; and forming a silicon dioxide layer having a second thickness superjacent said surface by introducing a second gas and energy.
Claim 11
Dependent Claim
27 words
A method for fabricating a semiconductor wafer, according to claim 8, wherein said first gas further comprises at least one of O 2 and N 2 O.
Claim 12
Dependent Claim
19 words
A method for fabricating a semiconductor wafer, according to claim 9, wherein said coating comprises silicon dioxide and SiF.
Claim 13
Dependent Claim
16 words
A method for fabricating a semiconductor wafer, according to claim 8, wherein said coating comprises Si-F.
Claim 14
Dependent Claim
19 words
A method for fabricating a semiconductor wafer, according to claim 10, wherein said method is performed at atmospheric pressure.
Claim 15
Dependent Claim
44 words
A method for fabricating a semiconductor wafer, according to claim 10, wherein said clean substrate is cleaned by exposing said substrate to a third gas at a temperature substantially within the range of 850° C. to 1250° C. for approximately 10 to 60 seconds.
Claim 16
Dependent Claim
35 words
A method for fabricating a semiconductor wafer, according to claim 13, wherein said third gas comprises at least one of NF 3 , GeH 4 , HF, and H 2 diluted with Ar-H 2 .
Claim 17
Dependent Claim
24 words
A method for fabricating a semiconductor wafer, according to claim 10, wherein said first thickness is in the approximate range of 10Å to 40Å.
Claim 18
Dependent Claim
24 words
A method for fabricating a semiconductor wafer, according to claim 15, wherein said second thickness is in the approximate range of 50Å to 150Å.
Claim 19
Dependent Claim
40 words
A method for fabricating a semiconductor wafer, according to claim 10, wherein said energy of step c) generates a temperature substantially within the range of 900° C. to 1050° C. and is applied for approximately 30 minutes to one hour.
Claim 20
Dependent Claim
26 words
A method for fabricating a semiconductor wafer, according to claim 10, wherein said second gas comprises at least one of O 2 and N 2 O.
Claim 21
Dependent Claim
19 words
A method for fabricating a semiconductor wafer, according to claim 10, wherein said chamber comprises a rapid thermal processor.
Claim 22
Independent Claim
177 words
A method for fabricating a semiconductor wafer, comprising the steps of: a) providing a substantially clean substrate in a chamber, said substrate having a surface, said substrate being cleaned with at least one of NF 3 , GeH 4 , and H 2 diluted with Ar-H 2 ; b) transferring said substrate from said chamber to a furnace in-situ employing a load lock; c) forming a silicon dioxide layer having a first thickness superjacent said surface by introducing at least one of O 2 and N 2 O into said furnace at a range of 900° C. to 1050° C. for approximately 30 minutes to one hour; d) transferring said substrate from said furnace to said chamber in-situ employing a load lock; and e) forming a film having a second thickness superjacent said surface by introducing at least one of O 2 , N 2 O and NF 3 into said chamber at a range of 850° C. to 1250° C. for approximately 5 to 30 seconds, wherein said film is formed before said silicon dioxide layer.
Claim 23
Independent Claim
177 words
A method for fabricating a semiconductor wafer, comprising the steps of: a) providing a substantially clean substrate in a chamber, said substrate having a surface, said substrate being cleaned with at least one of NF 3 , GeH 4 , and H 2 diluted with Ar-H 2 ; b) transferring said substrate from said chamber to a furnace in-situ employing a load lock; c) forming a silicon dioxide layer having a first thickness superjacent said surface by introducing at least one of O 2 and N 2 O into said furnace at a range of 900° C. to 1050° C. for approximately 30 minutes to one hour; d) transferring said substrate from said furnace to said chamber in-situ employing a load lock; and e) forming a film having a second thickness superjacent said surface by introducing at least one of O 2 , N 2 O and NF 3 into said chamber at a range of 850° C. to 1250° C. for approximately 5 to 30 seconds, wherein said film is formed before said silicon dioxide layer.
References Cited (Backward Citations)
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