US6087700A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gate having a barrier of titanium silicide
Assignee: Micron Technology Inc
•
Filing: 1998-02-11
•
Granted: 2000-07-11
•
Expires: 2018-02-11
Abstract
Abstract A method of fabricating a gate having a barrier layer of titanium silicide is comprised of the steps of forming a layer of gate oxide. The gate oxide may be formed using a standard LOCOS process. A layer of doped polysilicon is deposited over the layer of gate oxide. A layer of titanium silicide is formed in a predetermined relationship with respect the layer of doped polysilicon, i.e., it may be deposited on top of the polysilicon or formed in a top surface of the polysilicon layer. A layer of tungsten silicide is deposited on top of the layer of titanium silicide. The layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide are etched to form the gate. A gate thus fabricated is also disclosed.
Inventors
- 👤 Pierre C. Fazan
- 👤 Hiang C. Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:09
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
75 words
A substrate carrying a gate structure, comprising: a layer of gate oxide; a layer of doped polysilicon positioned on top of said layer of gate oxide; a layer of titanium silicide shallowly implanted in said layer of doped polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 2
Dependent Claim
75 words
A substrate carrying a gate structure, comprising: a layer of gate oxide; a layer of doped polysilicon positioned on top of said layer of gate oxide; a layer of titanium silicide shallowly implanted in said layer of doped polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 3
Dependent Claim
77 words
A combination, comprising: a substrate; a layer of gate oxide carried by said substrate; a layer of doped polysilicon positioned on top of said layer of gate oxide; a layer of titanium silicide shallowly implanted in said layer of doped polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 4
Dependent Claim
77 words
A combination, comprising: a substrate; a layer of gate oxide carried by said substrate; a layer of doped polysilicon positioned on top of said layer of gate oxide; a layer of titanium silicide shallowly implanted in said layer of doped polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 5
Independent Claim
99 words
A system, comprising: a microprocessor; a memory device in communication with said microprocessor, at least one of said microprocessor and said memory device having a transistor having a gate structure including a layer of gate oxide, a layer of doped polysilicon positioned on top of said layer of gate oxide, a layer of titanium silicide shallowly implanted in said layer of doped polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased, and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 6
Independent Claim
99 words
A system, comprising: a microprocessor; a memory device in communication with said microprocessor, at least one of said microprocessor and said memory device having a transistor having a gate structure including a layer of gate oxide, a layer of doped polysilicon positioned on top of said layer of gate oxide, a layer of titanium silicide shallowly implanted in said layer of doped polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased, and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 7
Dependent Claim
59 words
A substrate carrying a layer of polysilicon and a gate structure, comprising: a layer of titanium silicide shallowly implanted in the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of silicide positioned on top of said layer of titanium silicide.
Claim 8
Dependent Claim
59 words
A substrate carrying a layer of polysilicon and a gate structure, comprising: a layer of titanium silicide shallowly implanted in the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of silicide positioned on top of said layer of titanium silicide.
Claim 9
Dependent Claim
77 words
A semiconductor device, comprising: a substrate assembly; and at least one gate structure located on said substrate assembly, said gate structure having a layer of polysilicon, said gate structure comprising: a layer of titanium silicide shallowly implanted in the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of silicide positioned on top of said layer of titanium silicide.
Claim 10
Dependent Claim
77 words
A semiconductor device, comprising: a substrate assembly; and at least one gate structure located on said substrate assembly, said gate structure having a layer of polysilicon, said gate structure comprising: a layer of titanium silicide shallowly implanted in the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of silicide positioned on top of said layer of titanium silicide.
Claim 11
Independent Claim
92 words
A system, comprising: a microprocessor; and a memory device in communication with said microprocessor, at least one of said microprocessor and said memory device having a semiconductor device having a gate structure, the gate structure having a layer of polysilicon, the gate structure comprising: a layer of titanium silicide shallowly implanted in the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 12
Independent Claim
92 words
A system, comprising: a microprocessor; and a memory device in communication with said microprocessor, at least one of said microprocessor and said memory device having a semiconductor device having a gate structure, the gate structure having a layer of polysilicon, the gate structure comprising: a layer of titanium silicide shallowly implanted in the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 13
Dependent Claim
19 words
The substrate of claim 1 wherein said layer of titanium silicide is on the order of 100-500 angstroms thick.
Claim 14
Dependent Claim
25 words
The substrate of claim 1 wherein said layer of titanium silicide is of sufficient thickness to act as a barrier to the migration of fluorine.
Claim 15
Dependent Claim
19 words
The combination of claim 2 wherein said layer of titanium silicide is on the order of 100-500 angstroms thick.
Claim 16
Dependent Claim
25 words
The combination of claim 2 wherein said layer of titanium silicide is of sufficient thickness to act as a barrier to the migration of fluorine.
Claim 17
Dependent Claim
19 words
The substrate of claim 4 wherein said layer of titanium silicide is on the order of 100-500 angstroms thick.
Claim 18
Dependent Claim
25 words
The substrate of claim 4 wherein said layer of titanium silicide is of sufficient thickness to act as a barrier to the migration of fluorine.
Claim 19
Dependent Claim
25 words
The substrate of claim 4 wherein said layer of silicide positioned on top of said layer of titanium silicide includes a layer of tungsten silicide.
Claim 20
Dependent Claim
20 words
The semiconductor device of claim 5 wherein said layer of titanium silicide is on the order of 100-500 angstroms thick.
Claim 21
Dependent Claim
26 words
The semiconductor device of claim 5 wherein said layer of titanium silicide is of sufficient thickness to act as a barrier to the migration of fluorine.
Claim 22
Dependent Claim
26 words
The semiconductor device of claim 5 wherein said layer of silicide positioned on top of said layer of titanium silicide includes a layer of tungsten silicide.
Claim 23
Dependent Claim
88 words
A substrate carrying a gate structure having a barrier layer for preventing the migration of fluorine, comprising: a layer of gate oxide; a layer of polysilicon positioned on top of said layer of gate oxide; a thin layer of titanium silicide formed in, and at the top of, said layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 24
Dependent Claim
88 words
A substrate carrying a gate structure having a barrier layer for preventing the migration of fluorine, comprising: a layer of gate oxide; a layer of polysilicon positioned on top of said layer of gate oxide; a thin layer of titanium silicide formed in, and at the top of, said layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of tungsten silicide positioned on top of said layer of titanium silicide.
Claim 25
Dependent Claim
19 words
The substrate of claim 17 wherein said layer of titanium silicide is on the order of 100-500 angstroms thick.
Claim 26
Dependent Claim
74 words
A substrate carrying a gate structure having a layer of polysilicon and a barrier layer to prevent the migration of fluorine, comprising: a thin layer of titanium silicide formed at the top of, and in, the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of silicide positioned on top of said layer of titanium silicide.
Claim 27
Dependent Claim
74 words
A substrate carrying a gate structure having a layer of polysilicon and a barrier layer to prevent the migration of fluorine, comprising: a thin layer of titanium silicide formed at the top of, and in, the layer of polysilicon only in the area forming the gate structure such that the height of the layer of doped polysilicon is not increased; and a layer of silicide positioned on top of said layer of titanium silicide.
Claim 28
Dependent Claim
20 words
The substrate of claim 19 wherein said thin layer of titanium silicide is on the order of 100-500 angstroms thick.
Claim 29
Dependent Claim
25 words
The substrate of claim 19 wherein said layer of silicide positioned on top of said layer of titanium silicide includes a layer of tungsten silicide.
References Cited (Backward Citations)
JPS63197359A
Cited
US4974056A
Cited
US4900690A
Cited
US4886764A
Cited
US5654241A
Cited
US5202287A
Cited
US5023201A
Cited
US5138432A
Cited
US5364803A
Cited
US5572046A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |