US6100149A
Expired / Lapsed
US
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Method for rapid thermal processing (RTP) of silicon substrates
Assignee: Steag RTP Systems GmbH
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Filing: 1997-07-01
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Granted: 2000-08-08
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Expires: 2017-07-01
Abstract
Abstract A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.
Inventors
- 👤 Zsolt Nenyei
- 👤 Wilfried Lerch
- 👤 Helmut Sommer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:09
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P95/906; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01346
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
86 words
A method of producing an ultrathin oxide film by rapid thermal processing of a silicon substrate, comprising; processing the silicon substrate, the substrate having a thickness of oxide film of from 0 to 5 nm, in an RTP system in an atmosphere comprising a concentration of oxygen containing reactive gas, the reactive gas having a partial pressure in the range of 0.01 Torr to 3 Torr, until the thickness of the oxide film has significantly increased and is in a range from 0.5 to 5 nm.
Claim 2
Independent Claim
86 words
A method of producing an ultrathin oxide film by rapid thermal processing of a silicon substrate, comprising; processing the silicon substrate, the substrate having a thickness of oxide film of from 0 to 5 nm, in an RTP system in an atmosphere comprising a concentration of oxygen containing reactive gas, the reactive gas having a partial pressure in the range of 0.01 Torr to 3 Torr, until the thickness of the oxide film has significantly increased and is in a range from 0.5 to 5 nm.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein the concentration is between 0.1 Torr and 1 Torr partial pressure oxygen gas.
Claim 4
Dependent Claim
26 words
The method of claim 1, wherein the concentration is between 0.01 Torr and 3 Torr partial pressure nitric oxide (NO) or nitrous oxide (N 2 O).
Claim 5
Dependent Claim
20 words
The method of claim 3, wherein the atmosphere further comprises between 0.01 Torr and 3 Torr partial pressure oxygen gas.
Claim 6
Dependent Claim
19 words
The method of claim 4, wherein the partial pressure of oxygen gas is between 0.1 Torr and 1 Torr.
Claim 7
Dependent Claim
28 words
The method of claim 5, wherein the partial pressure of nitric oxide (NO) or nitrous oxide (N 2 O) is between 0.1 Torr and 1 Torr partial pressure.
Claim 8
Dependent Claim
22 words
The method of claim 1, wherein the reactive gas further comprises between 0.01 Torr and 3 Torr partial pressure NH 3 .
Claim 9
Independent Claim
77 words
A method of producing an ultrathin oxide film preferable in a range of 0.5 nm up to 5 nm on a surface of a silicon wafer, comprising: heating the wafer in an RTP system within a very low concentration of oxygen or oxygen containing reactive gas, either in low pressure or in neutral gas ambient, wherein said concentration is in a range of 0.02 Torr up to 3 Torr partial pressure of oxygen or oxygen containing gas.
Claim 10
Independent Claim
77 words
A method of producing an ultrathin oxide film preferable in a range of 0.5 nm up to 5 nm on a surface of a silicon wafer, comprising: heating the wafer in an RTP system within a very low concentration of oxygen or oxygen containing reactive gas, either in low pressure or in neutral gas ambient, wherein said concentration is in a range of 0.02 Torr up to 3 Torr partial pressure of oxygen or oxygen containing gas.
Claim 11
Dependent Claim
20 words
The method of claim 8, comprising an additional step of removing the native oxide from the wafer before said heating.
Claim 12
Dependent Claim
17 words
The method of claim 8, wherein the wafer is heated to 1250 C. in said heating step.
Claim 13
Dependent Claim
13 words
The method of claim 8, wherein said oxygen containing reactive gas is oxygen.
Claim 14
Dependent Claim
15 words
The method of claim 8, wherein said oxygen containing reactive gas is nitric oxide (NO).
Claim 15
Dependent Claim
15 words
The method of claim 8, wherein said oxygen containing reactive gas is nitrous oxide (N2O).
Claim 16
Dependent Claim
23 words
The method claim 13, wherein said oxygen containing reactive gas further comprises oxygen gas of partial pressure between 0.02 Torr and 3 Torr.
Claim 17
Dependent Claim
24 words
The method of claim 14, wherein said oxygen containing reactive gas further comprises oxygen gas of partial pressure between 0.02 Torr and 3 Torr.
Claim 18
Dependent Claim
13 words
The method of claim 8, wherein said oxygen containing reactive gas comprises H2O.
Claim 19
Dependent Claim
23 words
The method of claim 8, wherein said oxygen containing reactive gas comprises NH3 gas of partial pressure between 0.02 Torr and 3 Torr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |