Patent US6284316B1 successfully refreshed from Google Patents.
US6284316B1
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US
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Chemical vapor deposition of titanium
Assignee: Round Rock Research LLC
•
Filing: 2000-01-20
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Granted: 2001-09-04
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Expires: 2020-01-20
Abstract
Abstract A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
Inventors
- 👤 Gurtej Singh Sandhu
- 👤 Donald L. Westmoreland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:38
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/049; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; C23C16/04; C23C16/045; C23C16/06; C23C16/08; C23C16/56; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/42; H10P14/43; H10W20/033; H10W20/042; H10W20/045; H10W20/048; Y; Y10; Y10S; Y10S257/00; Y10S257/906; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12674; Y10T428/12736; Y10T428/12743; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 58
Claim 1
Independent Claim
77 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising: forming a seed layer in the contact hole by combining a first precursor with a first reducing agent; and forming the titanium layer in the contact hole by combining a titanium-containing precursor with the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 2
Independent Claim
77 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising: forming a seed layer in the contact hole by combining a first precursor with a first reducing agent; and forming the titanium layer in the contact hole by combining a titanium-containing precursor with the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 3
Independent Claim
88 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising: forming a seed layer in the contact hole by combining a first precursor with a first reducing agent, wherein the first precursor is a compound having an alkyl group; and forming the titanium layer in the contact hole by combining a titanium-containing precursor with the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 4
Independent Claim
88 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising: forming a seed layer in the contact hole by combining a first precursor with a first reducing agent, wherein the first precursor is a compound having an alkyl group; and forming the titanium layer in the contact hole by combining a titanium-containing precursor with the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 5
Dependent Claim
16 words
The method of claim 1 , further comprising annealing the titanium layer to form titanium silicide.
Claim 6
Dependent Claim
71 words
The method of claim 1 , wherein forming a seed layer comprises forming a seed layer in accordance with the following chemical process (I): MR x +H 2 →M+alkanes, (I) wherein: M is an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M.
Claim 7
Independent Claim
79 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming a seed layer comprises forming a zinc seed layer in accordance with the following chemical process (I): ZnR 2 +H 2 →Zn+alkanes, (I) wherein: R is an alkyl group.
Claim 8
Independent Claim
79 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming a seed layer comprises forming a zinc seed layer in accordance with the following chemical process (I): ZnR 2 +H 2 →Zn+alkanes, (I) wherein: R is an alkyl group.
Claim 9
Dependent Claim
23 words
The method of claim 4 , wherein forming a seed layer is performed at a temperature between approximately 100 and 600 degrees Celsius.
Claim 10
Dependent Claim
64 words
The method of claim 1 , wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II): TiCl 4 +M→Ti+MCl x (II) wherein: M an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; and x is some integer value equal to the valence of M.
Claim 11
Dependent Claim
30 words
The method of claim 1 , wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II): TiCl 4 +Zn→Ti+ZnCl 2 . (II)
Claim 12
Dependent Claim
29 words
The method of claim 7 , wherein forming the titanium layer in accordance with chemical process (II) is performed at a temperature between approximately 100 and 600 degrees Celsius.
Claim 13
Dependent Claim
16 words
The method of claim 1 , wherein forming the titanium layer further comprises forming titanium silicide.
Claim 14
Dependent Claim
25 words
The method of claim 10 , wherein forming titanium silicide comprises forming titanium silicide at a temperature of between approximately 250 to 750 degrees Celsius.
Claim 15
Dependent Claim
20 words
The method of claim 1 , wherein forming the titanium layer comprises forming the titanium layer comprising a titanium alloy.
Claim 16
Dependent Claim
43 words
The method of claim 12 , wherein forming the titanium layer comprising a titanium alloy comprises a titanium alloy containing titanium and an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony.
Claim 17
Independent Claim
66 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming the titanium layer comprises forming the titanium layer comprising a titanium alloy containing titanium and zinc.
Claim 18
Independent Claim
66 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming the titanium layer comprises forming the titanium layer comprising a titanium alloy containing titanium and zinc.
Claim 19
Independent Claim
170 words
A method for forming a titanium layer in a contact hole passing through an insulating layer of an integrated circuit, comprising: forming a seed layer in the contact hole by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); and forming the titanium layer in the contact hole by combining the seed layer with a second precursor with CVD; wherein the seed layer is formed according to the following chemical process (I): MR x +H 2 →M+alkanes, (I) wherein: M an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M; wherein chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl 4 +M→Ti+MCl x , (II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius.
Claim 20
Independent Claim
170 words
A method for forming a titanium layer in a contact hole passing through an insulating layer of an integrated circuit, comprising: forming a seed layer in the contact hole by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); and forming the titanium layer in the contact hole by combining the seed layer with a second precursor with CVD; wherein the seed layer is formed according to the following chemical process (I): MR x +H 2 →M+alkanes, (I) wherein: M an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M; wherein chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl 4 +M→Ti+MCl x , (II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius.
Claim 21
Independent Claim
137 words
A method for forming a titanium layer in a contact hole passing through an insulating layer of an integrated circuit, comprising: forming a seed layer in the contact hole by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); forming the titanium layer in the contact hole by combining the seed layer with a second precursor with CVD; wherein the seed layer is zinc, and formed according to the following chemical process (I): ZnR 2 +H 2 →Zn+alkanes, (I) wherein R is an alkyl group and chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl 4 +Zn→Ti+ZnCl 2 , (II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius.
Claim 22
Independent Claim
137 words
A method for forming a titanium layer in a contact hole passing through an insulating layer of an integrated circuit, comprising: forming a seed layer in the contact hole by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); forming the titanium layer in the contact hole by combining the seed layer with a second precursor with CVD; wherein the seed layer is zinc, and formed according to the following chemical process (I): ZnR 2 +H 2 →Zn+alkanes, (I) wherein R is an alkyl group and chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl 4 +Zn→Ti+ZnCl 2 , (II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius.
Claim 23
Dependent Claim
16 words
The method of claim 15 , further comprising annealing the titanium layer to form titanium silicide.
Claim 24
Dependent Claim
16 words
The method of claim 15 , wherein forming the titanium layer further comprises forming titanium silicide.
Claim 25
Dependent Claim
26 words
The method of claim 18 , wherein forming the titanium silicide comprises forming titanium silicide at a temperature of between approximately 250 to 750 degrees Celsius.
Claim 26
Dependent Claim
20 words
The method of claim 15 , wherein forming the titanium layer comprises forming the titanium layer comprising a titanium alloy.
Claim 27
Dependent Claim
43 words
The method of claim 15 , wherein forming the titanium layer comprising a titanium alloy comprises a titanium alloy containing titanium and an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony.
Claim 28
Independent Claim
178 words
A method for forming a titanium layer on an integrated circuit, comprising: forming a seed layer on the integrated circuit by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); and forming the titanium layer on the integrated circuit by combining the seed layer with a second precursor with CVD; wherein the seed layer is formed according to the following chemical process (I): MR x +H 2 →M+alkanes, (I) wherein: M an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M; wherein chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl 4 +M→Ti+MCl x , (II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius and forming the titanium layer comprising a titanium alloy comprises a titanium alloy containing titanium and zinc.
Claim 29
Independent Claim
178 words
A method for forming a titanium layer on an integrated circuit, comprising: forming a seed layer on the integrated circuit by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); and forming the titanium layer on the integrated circuit by combining the seed layer with a second precursor with CVD; wherein the seed layer is formed according to the following chemical process (I): MR x +H 2 →M+alkanes, (I) wherein: M an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M; wherein chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl 4 +M→Ti+MCl x , (II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius and forming the titanium layer comprising a titanium alloy comprises a titanium alloy containing titanium and zinc.
Claim 30
Independent Claim
115 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising: forming a seed layer in the contact hole by combining a first precursor with a first reducing agent, wherein the first precursor is a compound having an alkyl group and wherein the compound further comprises an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; and forming the titanium layer in the contact hole by combining a titanium-containing precursor with the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 31
Independent Claim
115 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising: forming a seed layer in the contact hole by combining a first precursor with a first reducing agent, wherein the first precursor is a compound having an alkyl group and wherein the compound further comprises an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; and forming the titanium layer in the contact hole by combining a titanium-containing precursor with the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 32
Dependent Claim
115 words
A chemical vapor deposition method of providing a layer of titanium in a contact hole of an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: injecting a first precursor and reducing agent in the CVD reactor; forming a seed layer in the contact hole from reaction of the first precursor and the reducing agent, wherein the first precursor is a compound having an alkyl group; injecting a titanium-containing precursor in the CVD reactor; and forming the titanium layer in the contact hole from reaction of the titanium-containing precursor and the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 33
Dependent Claim
115 words
A chemical vapor deposition method of providing a layer of titanium in a contact hole of an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: injecting a first precursor and reducing agent in the CVD reactor; forming a seed layer in the contact hole from reaction of the first precursor and the reducing agent, wherein the first precursor is a compound having an alkyl group; injecting a titanium-containing precursor in the CVD reactor; and forming the titanium layer in the contact hole from reaction of the titanium-containing precursor and the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 34
Dependent Claim
142 words
A chemical vapor deposition method of providing a layer of titanium in a contact hole of an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: injecting a first precursor and reducing agent in the CVD reactor; forming a seed layer in the contact hole from reaction of the first precursor and the reducing agent, wherein the first precursor is a compound having an alkyl group and wherein the compound further comprises an element selected from the group consisting of zinc, cadmium, mercury, aluminun, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; injecting a titanium-containing precursor in the CVD reactor; and forming the titanium layer in the contact hole from reaction of the titanium-containing precursor and the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 35
Dependent Claim
142 words
A chemical vapor deposition method of providing a layer of titanium in a contact hole of an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: injecting a first precursor and reducing agent in the CVD reactor; forming a seed layer in the contact hole from reaction of the first precursor and the reducing agent, wherein the first precursor is a compound having an alkyl group and wherein the compound further comprises an element selected from the group consisting of zinc, cadmium, mercury, aluminun, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; injecting a titanium-containing precursor in the CVD reactor; and forming the titanium layer in the contact hole from reaction of the titanium-containing precursor and the seed layer in a chemical process that separates titanium in the titanium-containing precursor from a second element in the titanium-containing precursor.
Claim 36
Dependent Claim
81 words
A chemical vapor deposition method of providing a layer of titanium on an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: injecting a first precursor and reducing agent in the CVD reactor; forming zinc on the integrated circuit from a reaction of the first precursor and the first reducing agent; injecting a second precursor in the CVD reactor; and forming the titanium layer on the integrated circuit from a reaction of the second precursor and the zinc.
Claim 37
Dependent Claim
81 words
A chemical vapor deposition method of providing a layer of titanium on an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: injecting a first precursor and reducing agent in the CVD reactor; forming zinc on the integrated circuit from a reaction of the first precursor and the first reducing agent; injecting a second precursor in the CVD reactor; and forming the titanium layer on the integrated circuit from a reaction of the second precursor and the zinc.
Claim 38
Dependent Claim
16 words
The method of claim 24 , further comprising annealing the titanium layer to form titanium silicide.
Claim 39
Dependent Claim
67 words
The method of claim 24 , wherein forming the seed layer is in accordance with the following chemical process (I): MR x +H 2 →M+alkanes, (I) wherein: M is an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M.
Claim 40
Dependent Claim
31 words
The method of claim 26 , wherein forming the zinc is in accordance with the following chemical process (I): ZnR 2 +H 2 →Zn+alkanes, (I) wherein: R is an alkyl group.
Claim 41
Dependent Claim
31 words
The method of claim 28 , wherein forming the seed layer comprises forming the seed layer according to chemical process (I) at a temperature between approximately 100 and 600 degrees Celsius.
Claim 42
Dependent Claim
30 words
The method of claim 28 , wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II): TiCl 4 +M→Ti+MCl x . (II)
Claim 43
Dependent Claim
30 words
The method of claim 29 , wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II): TiCl 4 +Zn→Ti+ZnCl 2 . (II)
Claim 44
Dependent Claim
31 words
The method of claim 31 , wherein forming the titanium layer comprises forming the titanium layer according to chemical process (II) at a temperature between approximately 100 and 600 degrees Celsius.
Claim 45
Dependent Claim
16 words
The method of claim 24 , wherein forming the titanium layer further comprises forming titanium silicide.
Claim 46
Dependent Claim
25 words
The method of claim 34 , wherein forming titanium silicide comprises forming titanium silicide at a temperature of between approximately 250 to 750 degrees Celsius.
Claim 47
Dependent Claim
41 words
The method of claim 24 , wherein forming the titanium layer further comprises forming a titanium alloy containing titanium and an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony.
Claim 48
Dependent Claim
19 words
The method of claim 26 , wherein forming the titanium layer further comprises forming a titanium zinc alloy layer.
Claim 49
Independent Claim
79 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising forming the titanium layer in the contact hole according to the following chemical process (III): TiCl 4 +M (source)→Ti+MCl x (III) wherein: M is an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; and x is some integer value equal to the valence of M.
Claim 50
Independent Claim
79 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising forming the titanium layer in the contact hole according to the following chemical process (III): TiCl 4 +M (source)→Ti+MCl x (III) wherein: M is an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; and x is some integer value equal to the valence of M.
Claim 51
Independent Claim
43 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising forming the titanium layer in the contact hole according to the following chemical process (III): TiCl 4 +Zn→Ti+ZnCl 2 . (III)
Claim 52
Independent Claim
43 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising forming the titanium layer in the contact hole according to the following chemical process (III): TiCl 4 +Zn→Ti+ZnCl 2 . (III)
Claim 53
Dependent Claim
16 words
The method of claim 38 , further comprising annealing the titanium layer to form titanium silicide.
Claim 54
Independent Claim
84 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising forming the titanium layer according to the following chemical process (IV): MR x +H 2 +TiCl 4 →Ti+MCl x +alkanes, (IV) wherein: M is an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M.
Claim 55
Independent Claim
84 words
A method for forming a titanium layer in a contact hole passing through an insulating layer supported by a semiconductor substrate, comprising forming the titanium layer according to the following chemical process (IV): MR x +H 2 +TiCl 4 →Ti+MCl x +alkanes, (IV) wherein: M is an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; R is an alkyl group; and x is some integer value equal to the valence of M.
Claim 56
Independent Claim
39 words
A method for forming a titanium layer supported by a substrate, comprising forming the titanium layer according to the following chemical process (IV): ZnR 2 +H 2 +TiCl 4 →Ti+ZnCl 2 +alkanes, (IV) wherein: R is an alkyl group.
Claim 57
Independent Claim
39 words
A method for forming a titanium layer supported by a substrate, comprising forming the titanium layer according to the following chemical process (IV): ZnR 2 +H 2 +TiCl 4 →Ti+ZnCl 2 +alkanes, (IV) wherein: R is an alkyl group.
Claim 58
Dependent Claim
20 words
The method of claim 41 , wherein forming the titanium layer comprises forming the titanium layer comprising a titanium alloy.
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